Process Check-Oxford PlasmaPro 100 ICP.pdf
Oxford PlasmaPro 100 Inductively - Coupled Plas ma Chemic al Vapo r Depositi on (ICP - CVD) system Oxford ICP - CVD SiN @ 250 ˚C – Recipe: OP T SiO2 @ 250 – 9 nm/min – Pr oc ess Ch eck 4% SiH4/Ar N2 Pressure ICP RF Temp …
Oxford PlasmaPro 100 Inductively-Coupled Plasma Chemical Vapor
Deposition (ICP-CVD) system
Oxford ICP-CVD SiN @ 250 ˚C – Recipe: OPT SiO2 @ 250 – 9 nm/min – Process Check
4% SiH4/Ar
N2 Pressure ICP RF Temp. Time
Dep
Rate
Thx. Non-
uniformity
Avg R.I.
BOE 10:1
Etch Rate
sccm
sccm
mTorr
W
W
ºC
mm:ss
Å/min
±%
Å/sec
290
5.7
12
1500
0
250
10:00
92
< 3.0
2.01
15
Oxford ICP-CVD SiO2 @ 250 ˚C – Recipe: OPT SiN @ 250 – 8 nm/min – Process Check
4% SiH4/Ar
N2O Pressure ICP RF Temp. Time
Dep
Rate
Thx. Non-
uniformity
Avg R.I.
BOE 10:1
Etch Rate
sccm
sccm
mTorr
W
W
ºC
mm:ss
Å/min
±%
Å/sec
100
70
12
1000
20
250
15:00
82
< 3.0
1.47
12
94
92
94
96
88
87
92
80
85
90
95
100
12/12/2018 12/13/2018 12/18/2018 12/21/2018 12/29/2018 1/30/2019 2/15/2019
Deposition Rate (A/min)
Date
80
85
82 82
70
75
80
85
90
95
2/13/2019 2/15/2019 2/17/2019 2/19/2019 2/21/2019 2/23/2019 2/25/2019
Deposition Rate (A/min)
Date