Oxford-100-Manual.pdf - 第126页
PlasmalabSystem 100 Oxford Instruments Plasma Technology WARNING System Manual BEFORE PROCEEDING WITH ANY MAINTENANCE WORK, READ SECTION 1· HEALTH AND SAFETY. The etch cleaning should be performed each time the aggregate…
System
Manual
Oxford
Instruments
Plasma
Technology
WARNING
PiasmaiabSystem100
BEFORE
PROCEEDING WITH
ANY
MAINTENANCE WORK, READ SECTION 1 - HEALTH
AND
SAFETY.
6.4.3
6.4.4
6.4.5
6.4.6
Three-Monthly
1)
Heater/chiller
unit
(on closed
loop
cooling
systems).
If
the
condenser
on
the
refrigeration
circuit
is
air-cooled,
it
should be
kept
clean
enough
to
allow
the
free
flow
of
air
through
it.
Dirt
can be removed by brushing
or
vacuum cleaning.
Radio
frequency
radiation
leakage:
Carry
out
the
Radio Frequency
radiation
leakage tests
as
detailed
in
Appendix
A
'Measurement
of
RF
and microwave emissions'.
Annually
1)
Replace
or
clean
the
filters
used
in
the
compressed air supply system.
2)
Replace
the
filters in
the
cooling
water
system.
3)
Where
closed
loop
(recirculating)
water
cooling
systems are used, drain
the
system
and replace
the
coolant
with
Hexid A40
coolant
(Oxford
Plasma Technology Part No.
GIWTRlSUN/007
for
15 litres). This
product
is
propylene
glycol based and
is
pre-
diluted
ready
for
use.
Refer
to
Appendix
S(Services Specifications
for
Plasmalab and
lonfab
systems) sub-section
2.1
for
the
warranty
impact
of
not
using this product.
Changing
the
gas
bottles
The
operator
should be
aware
that
certain process parameters may change
as
the
process gas
bottles
pressure drops. For example,
inert
gas
bottles
which
are
normally
filled
to
about
3000
psi, should
be
changed
when
the
pressure drops
below
400 psi. The
inlet
pressure should be
25
-
35
psia. Before disconnecting
the
empty
bottle
it
is
advisable
to
thoroughly
evacuate
the
gas line (by closing
the
gas
bottle
tap
and
pumping
the
line via
the
MFC).
The line should
then
be
filled
with
dry
N
2
if
available.
Once
the
new
bottle
has been connected,
monitor
the
vacuum
integrity
of
the
gas line
before
opening
the
bottle
by
setting
a
high
flow
on
the
MFC,
pumping
the
line
thoroughly
(via
the
MFC),
isolating
the
process chamber and
noting
the
rate
of
pressure rise.
An
abnormally
high
value (>2mTorr/minute) may indicate a leak
in
the
gas
line
or
the
regulator
to
bottle
connection.
During
normal
operation
the
bottle
pressure and line pressure
on
the
cylinder
regulator
should be
regularly
checked
for
loss
of
pressure
during
periods
when
the
gas
bottle
tap
is
turned
off
(during
shut-down
periods,
overnight
or
over a weekend). This
will
indicate a leak
from
the
gas line
or
the
regulator.
Etch
cleaning
Where
the
system
is
used
for
Plasma Enhanced Chemical
Vapour
Deposition
(PECVD),
the
manual processing runs should be interspersed
with
etching
processes
as
an
efficient
method
of
cleaning
the
electrodes
and
chamber walls.
The
etching
processes
may
be
optimised
to
suit
particular
processing requirements; however,
the
following
recommendations may
be
used
as
a
starting
point.
Printed: 22-Mar-06,
7:41
Maintenance
Page
6-7
of
22
UC
Davis 94-721001
Issue
1:
March 06
PlasmalabSystem100
Oxford
Instruments Plasma Technology
WARNING
System
Manual
BEFORE
PROCEEDING WITH
ANY
MAINTENANCE WORK, READ SECTION
1·
HEALTH
AND
SAFETY.
The etch cleaning should be
performed
each
time
the
aggregate
of
the
deposition
layers
reaches
-10
microns.
The recommended clean process
is:
CFi02
8%
or
20%, 700mTorr, 200W,
;:::30
minutes
This process
is
optimised
for
rapid electrode cleaning.
If
it
is
found
that
the
cleaning rate
of
the
chamber walls
is
too
slow
with
the
above process,
then
a
low
pressure process can also be
used:
CF
4
/0
2
8%
or
20%, 350mTorr, 200W,
;:::
30minutes
The
two
processes can be
alternated
until
the
chamber and electrodes are etched clean.
A chamber
conditioning
step (using
the
normal
deposition
conditions in
the
empty
chamber
to
deposit
0.2-0.5IJm)
is
recommended
before
processing wafers.
UC
Davis 94-721001
Issue
1:
March 06
Maintenance
Page 6-8
of
22
Printed: 22-Mar-06,
7:41
System
Manual
Oxford
Instruments
Plasma
Technology
WARNING
PlasmalabSystem100
BEFORE
PROCEEDING WITH
ANY
MAINTENANCE WORK, READ SECTION 1 - HEALTH
AND
SAFETY.
6.5
94·100·3·41C
ICP
180
chamber
kit
with
gate
valve
WARNING
BEFORE
ATTEMPTING
ANY
MAINTENANCE WORK ON THE
PROCESS
CHAMBER, IT
MUST
BE
SUBJECTED TO AT LEAST TWO VENT CYCLES SUBSEQUENT TO A
PROCESSING RUN.
6.5.1
6.5.2
Monthly
1)
Visually examine
the
interior
of
the
chamber
for
contamination.
Any
necessary
cleaning should be carried
out
using a
lint-free
cloth
moistened
with
Isopropyl
Alcohol
(lPA).
Tougher
deposits can be removed using an abrasive pad first.
WARNING
ISOPROPYL ALCOHOL IS HIGHLY INFLAMMABLE (FLAMMABLE).
DO
NOT
USE
IT
NEAR A NAKED FLAME
OR
ENERGISED ELECTRICAL EQUIPMENT.
Examine
the
exterior
of
the
chamber and its
fittings
for
damage.
Examine
the
lid and seals
for
any damage
or
deterioration.
Examine
the
heating/cooling
water
flow
system
for
signs
of
leakage.
Purge
the
process chamber
for
thirty
minutes
with
dry
nitrogen
if
IPA has been used
for
cleaning.
Visually examine
the
top
electrode
for
contamination.
Any
necessary cleaning should be
carried
out
using a
lint-free
cloth
moistened
with
Isopropyl Alcohol (lPA).
Examine
the
top
electrode and its
integral
gas and
water
fittings
for
damage.
Examine
the
seals
for
signs
of
deterioration.
O-rings
The O-rings should be checked
monthly
but
replaced
as
and
when
necessary.
Replacement O-rings should be constructed
of
Viton
and pre-baked
to
150°C
to
minimise
the
risk
of
water
vapour
from
the
O-rings. The chamber
lid
O-ring should
not
need
to
be removed
unless
it
leaks. Clean
the
O-ring in situ using a
lint-free
cloth
wetted
with
Isopropyl Alcohol.
To change
the
lid
O-ring
(use gloves):
1)
Remove
the
O-ring,
being
careful
not
to
damage
the
retaining
groove.
2)
Use
a
lint-free
cloth
and IPA
to
clean
the
O-ring sealing face on
the
chamber.
3)
The
new
O-ring, cleaned
with
IPA, should be inserted
with
no
twists. Stretch
the
0-
ring
evenly
as
it
is
inserted
to
avoid local regions
of
stretching.
Printed: 22-Mar-06,
7:41
Maintenance
Page 6-9
of
22
UC
Davis 94-721001
Issue
1:
March 06