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SEMI E141-0705 © SEMI 2005 1 SEMI E141-0705 GUIDE FOR SPECIFICATION OF E LLIPSOMETER EQUIPMENT FOR USE IN INTEGRATED METROLOGY This standard was technically a pproved by the global Metrics Committ ee. This edition was ap…

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SEMI E140-0305 © SEMI 2005 13
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SEMI E141-0705 © SEMI 2005 1
SEMI E141-0705
GUIDE FOR SPECIFICATION OF ELLIPSOMETER EQUIPMENT FOR
USE IN INTEGRATED METROLOGY
This standard was technically approved by the global Metrics Committee. This edition was approved for
publication by the global Audits and Reviews Subcommittee on May 20, 2005. It was available at
www.semi.org in June 2005 and on CD-ROM in July 2005.
1 Purpose
1.1 The application of integrated metrology is anticipated to become a key factor for advanced process control in
future integrated circuit (IC) manufacturing. Important parameters, which are typically measured for the
characterization and qualification of device manufacturing steps, are the thickness and the optical properties of
fabricated layers and the critical dimensions (CD) of submicron structures. For the measurement principle of
ellipsometry, which is commonly applied in both applications, different equipment and, hence, procedures and
notations for data acquisition and modeling exist. If, therefore, ellipsometry is to be applied for integrated metrology
equipment, the physical and the software integration into the equipment should be standardized to avoid efforts for
specific installations depending on the equipment and fabrication environment.
1.2 The description of the mechanical integration of an ellipsometer into an equipment module (e.g. a front end
module or an equipment chamber) comprises the
specification of the ellipsometer equipment and the spatial arrangement of the ellipsometer modules and
components,
specification of the relative position of the ellipsometer equipment to the equipment module, and
specification of the mechanical interfaces to the equipment module.
1.3 A prerequisite for a standardized software integration of an ellipsometer is the standardized notation of the layer
counting method, the measurement parameters, the measurement data, and the measurement results. This document
describes the position of the metrology equipment with respect to the sample. The position of the measurement
position (i.e. the position of the measurement spot) refers to the description of the wafer surface coordinate system
as described in SEMI M20.
1.4 The purpose of this standard is to provide a guide for a unique specification of the most commonly applied
ellipsometer equipment, the comprised modules and components, and their spatial arrangement. In this standard, the
notation for parameters required in data acquisition and modeling is specified, and a unique notation for remote
access on measurement parameters, data, and results is provided. Derived from these definitions, the required
parameters to identify the calibration status of an ellipsometer are specified. Additionally, recommendations for
preferred physical units are given.
1.5 The standard is intended for use in integrated metrology, but may also be applicable for stand-alone metrology.
2 Scope
2.1 This standard covers reflection ellipsometric measurements in integrated metrology.
2.2 The standard covers the typical applications of ellipsometry, which are the determination of layer thickness and
optical properties.
NOTICE: This standard does not purport to address safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish appropriate safety and health practices and determine the
applicability of regulatory or other limitations prior to use.
3 Limitations
3.1 The standard is limited to the measurement technique of ellipsometry although definitions may be applicable to
the measurement technique of polarimetry.
SEMI E141-0705 © SEMI 2005 2
3.2 The standard is limited to the measurement of isotropic samples. It is limited to the application of Stokes
vectors, Jones-, or Muller - matrix formalisms for the mathematical treatment of the sequence of optical components
(see ¶7.6).
3.3 The ellipsometer equipment differs in the capability to measure all elements of the Stokes vector.
3.4 The ellipsometer equipment differs in the capability to measure the number of unknown optical properties of a
sample and in their capability to measure critical dimension parameters.
3.5 This standard does not address the calibration procedures of ellipsometer equipment.
4 Referenced Standards and Documents
4.1 SEMI Standards
SEMI E30.5 — Specification for Metrology Specific Equipment Model (MSEM)
SEMI E89 — Guide for Measurement System Analysis (MSA)
SEMI E127 — Specification for Integrated Measurement Module Communications: Concepts, Behavior, and
Services (IMMC)
SEMI M20 — Practice for Establishing a Wafer Coordinate System
SEMI MF576 — Test Method for Measurement of Insulator Thickness and Refractive Index on Silicon Substrates
by Ellipsometry
NOTICE: Unless otherwise indicated, all documents cited shall be the latest published versions.
5 Terminology
5.1 Definitions
5.1.1 calibration — set of operations that establish, under specified conditions, the relationship between values of
quantities indicated by a measuring instrument or measuring system, or values represented by a material measure or
a reference material, and the corresponding values realized by standards
1
.
5.1.2 ellipsometry — a measurement method based on the principle of measuring the change of the polarization
state of light after reflection from the sample surface. Ellipsometry is commonly applied for the measurement of
layer thickness, refractive index and extinction coefficient, or critical dimensions.
5.1.3 in situ measurement — a measurement performed inside the processing chamber of an equipment. If a wafer
is used for this measurement, the wafer typically can be fed back into the process flow. The measurement data is
typically available within regular wafer-to-wafer processing time frame or within wafer processing time frame (e.g.
when performing layer thickness measurements during plasma etching).
5.1.4 in situ metrology — the science of measurement referring to in situ measurements.
5.1.5 in-line measurement — a measurement performed inside any portion of an equipment or work cell except the
processing chamber. If a wafer is used for this measurement, the wafer typically can be fed back into the process
flow. The measurement data is typically available within regular wafer-to-wafer processing time frame (e.g. layer
thickness measurements performed inside a cooling station of a cluster tool).
5.1.6 in-line metrology — the science of measurement referring to in-line measurements.
5.1.7 integrated metrology — the science of measurement using metrology equipment that is closely connected to
an equipment or work cell, characterized by the capability to perform in-line and in situ measurements.
5.1.8 layer thickness — the metric distance between two interfaces.
5.1.9 measurand — particular quantity subject to measurement
1
.
5.1.10 measurement — set of operations having the object of determining a value of a quantity
1
.
1 International vocabulary of basic and general terms in metrology, Second Edition, ISBN 92-67-01075-1, International Organization for
Standardization 1993.