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SEMI E35.1-95 © SEMI 1995, 2004 2 compared dire ctly on the basis of particl es or other direct metrics such as uniformity. 5.2.3 The Cost of Equipm ent Ownership should o nly reflect Equipment Yield. The perce ntage of …

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SEMI E35.1-95 © SEMI 1995, 2004 1
SEMI E35.1-95 (Withdrawn 0304)
GUIDE FOR COST OF EQUIPMENT OWNERSHIP COMPARISON
METRIC
NOTICE: This document was balloted and approved for withdrawal in 2004.
1 Purpose
1.1 The purpose of this guide is to provide a standard
constrained version of the Cost of Ownership for
Semiconductor Manufacturing Equipment Metrics
Guide to provide a baseline metric for comparing cost
effectiveness of competitive factory equipment
subsystems in the semiconductor industry. The major
constraints are the inclusion of only Equipment Yield
and the exclusion of the Cost of Yield Loss consisting
of defect limited yield and parametric yield.
1.2 The guide establishes well-defined practice to
facilitate cost comparisons of equipment by using
definitions, classifications and methods necessary to
build a useful cost of equipment ownership comparator
as a constraint version of SEMI E35. The guide should
facilitate communication about cost of ownership.
2 Scope
2.1 This guide is a subset of a full COO calculator as
presented in SEMI E35 and constitutes a fully
conforming standard constraint version. The baseline
metric is meant to reflect those equipment aspects over
which an equipment supplier has responsibility and
seeks to minimize aspects which couple costs for
individual equipment to the entire factory system. The
use of the metric is for competitive evaluation of
equipment sets to be used for a specific process step.
2.2 Effective use of the metric to build a COO model
requires identification of the constraints, parameter
values within the adopted category classification. The
primary calculators should, where possible, use direct
values for inputs rather than deriving them from
secondary models or using the default values provided
in Related Information 1 and 2 in SEMI E35. A COO
model requires data for many parameters. Default data
for the COO is provided within this document and may
be updated periodically through support documents.
3 Referenced Documents
3.1 SEMI Documents
SEMI E10 — Guideline for Definition and
Measurement of Equipment Reliability, Availability,
and Maintainability
SEMI E35 — Guideline for Cost of Ownership for
Semiconductor Manufacturing Equipment Metrics
SEMI Compilation of Terms
4 Terminology
All terminology in this guideline is defined in SEMI
E35.
5 Cost of Equipment Ownership Comparator
The Cost of Equipment Ownership Comparator
(CEOC) metric is the incremental cost added to a good
wafer or IC device flowing through a volume sized
process system embedded in a factory environment for
a specified lifetime. The metric is expressed as Cost per
Good Wafer Equivalent for one pass through the
system. CEOC should reflect the full cost of embedding
and operating in a factory environment a process
system needed to accommodate a specified number of
wafers but does not include defect yield or parametric
yield loss.
5.1 CEOC: Fixed and Recurring Costs — Determining
the Cost of Ownership requires enumerating all of the
Fixed and Recurring costs. Fixed costs are those
incurred once and are usually associated with the
acquisition and incorporation of equipment into the
factory. Recurring costs are those which arise on an
annual basis from the operation and maintenance of the
equipment.
5.2 Yield
5.2.1 Production yield (PY) is often tied to a large
number of factors which are principally the
responsibility of the IC manufacturer and equipment
comparisons for production yield should be done
directly in the context of the production flow. Yield is a
metric of the percentage of the wafer volume that
results in good wafers and enters the picture in a
number of ways which can complicate comparisons.
Yield-related comparisons of equipment should be dealt
with directly rather than lumping them into the CEO.
COST of
Embedding + Operating
CEO =
annualized
Fixed Costs
per system
annualized
Recurring Costs
per system
+
(
)
*
Volume Required
# Systems
Good Units
Per Year
5.2.2 Particles additions for example are often used as
a predictor of yield loss. Equipment should be
SEMI E35.1-95 © SEMI 1995, 2004 2
compared directly on the basis of particles or other
direct metrics such as uniformity.
5.2.3 The Cost of Equipment Ownership should only
reflect Equipment Yield. The percentage of wafers
which can be passed to the next step can be based on
any criteria, such as broken wafers or wafers
determined to be defective by inspection or test.
5.3 Life — Time over which the fixed and recurring
costs are spread for the annualized basis. Tax Life is
customarily used in COO based upon standard
accounting practice.
COO Lifetimes
1. Tax Lifetime - Depreciation
2. Equipment Production Lifetime
5.4 System Throughput — Wafers per hour capability
for the process system.
5.5 Volume Requirement
5.5.1 The volume requirement is the wafer or IC (unit)
flow to be processed. The volume requirement can be
derived from specification of the product wafers or IC
devices needed corrected for yield and the required
number of other wafers which might be designated as
test, dummy, or monitor wafers. One complication in
accurately dealing with the volume requirement is that
the volume of wafers actually reaching the equipment
will depend on the volume loss from equipment yield
for all the prior steps.
5.5.2 For CEOC, volume should be dealt with
parametrically based upon factory wafer starts. For
multi-chamber equipment, the impact of added
chambers to increase capacity should be included as
well as the impact of adding whole systems.
5.6 Good Wafer Equivalents (GWE) — GWE is
derived from the number of good product die at wafer
probe and is expressed as completely good wafers.
5.7 Systems Required — See SEMI E35.
6 Reporting Results
Conform to SEMI E35.
7 Limitations
7.1 Certain factors are more difficult than others to
accurately determine. Thus, the accuracy of a COO
calculation may be prone to a variety of errors or
omissions. In addition, line balance considerations are
not included in cost of ownership calculation.
7.2 A COO calculation may have more detail than
presented explicitly in this guide. The structure of the
guide however allows for the proper handling of these
situations.
8 Procedures
8.1 The CEOC algorithm requires the specification of
the volume level and the enumeration of appropriate
fixed and recurring costs associated with processing
that volume. The CEOC metric is a function expressed
as the sum of a number of categories which constitute a
classification system as given in SEMI E35. Each item
in the classification system should be defined, a method
for evaluating its expression given, and default values
or handling specified. The cost of equipment ownership
is a sum over the elements in the Category Table as
expressed in Equation 2 and defined in SEMI E35.
8.2 Each item in the classification system is defined, a
method for evaluating its expression given, and default
values or handling specified. All costs must be assigned
through the classification system and calculated per
system for the number of production hours.
CEOC
=
F
0j
j
+
R
0k
k
*
Volume
Required
# Systems
# Good Units
p
er year
=
F
ij
ij
+
R
kl
kl
*
Volume
Required
# Systems
# Good Units
p
er yea
r
(2)
NOTICE: These standards do not purport to address
safety issues, if any, associated with their use. It is the
responsibility of the user of these standards to establish
appropriate safety and health practices and determine
the applicability of regulatory limitations prior to use.
SEMI makes no warranties or representations as to the
suitability of the standards set forth herein for any
particular application. The determination of the
suitability of the standard is solely the responsibility of
the user. Users are cautioned to refer to manufacturer’s
instructions, product labels, product data sheets, and
other relevant literature respecting any materials
mentioned herein. These standards are subject to
change without notice.
The user’s attention is called to the possibility that
compliance with this standard may require use of
copyrighted material or of an invention covered by
patent rights. By publication of this standard, SEMI
takes no position respecting the validity of any patent
rights or copyrights asserted in connection with any
item mentioned in this standard. Users of this standard
are expressly advised that determination of any such
patent rights or copyrights, and the risk of infringement
of such rights, are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
the contents in whole or in part is forbidden without express written
consent of SEMI.
SEMI E43-0301 © SEMI 1995, 20011
SEMI E43-0301
GUIDE FOR MEASURING STATIC CHARGE ON OBJECTS AND
SURFACES
This guide was technically approved by the Global Metrics Committee and is the direct responsibility of the
North American Metrics Committee. Current edition approved by the North American Regional Standards
Committee on November 22, 2000. Initially available at www.semi.org December 2000; to be published
March 2001. Originally published in 1995.
This document was entirely rewritten in 2001.
1 Purpose
1.1 The purpose is to establish a guide for
reproducible measurement of electrostatic charge(s) on
any surface or object, consistent with the scope and
limitations set forth below.
2 Scope
2.1 The measurement methods described herein can be
applied to characterize the general electrostatic charge
level(s) on objects and surfaces in all environments.
Acceptable instrumentation, calibration, and measure-
ment techniques are described in this document.
Appendices include background information on the
equipment specified and calibration procedure, as well
as information and advice on performing a useful
general static survey.
2.2 This standard does not purport to address safety
issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety health practices and determine the
applicability or regulatory limitations prior to use.
3 Limitations
3.1 Direct measurement of charge usually requires the
use of a coulombmeter. Charges on an isolated
conductor can be measured by transferring the charge
into the coulombmeter by contacting the isolated
conductor with the coulombmeter input probe. Charges
on isolated conductors and insulators can be measured
by transferring the charged object into a Faraday
enclosure that is connected to the coulombmeter. These
measurements can be relatively precise if care is taken
in the transfer process to avoid changing the charge
level when making the measurements.
3.2 Direct measurement of charge is often impractical.
In these instances, charge is indirectly evaluated by
detecting the electrostatic field from a charged surface
using an electrostatic fieldmeter or an electrostatic
voltmeter.
3.3 This guide does not describe instrumentation and
techniques capable of making highly precise
measurement of electrostatic charge. It is not suitable
for measurement of electrostatic charge on small
objects, such as packaged devices (i.e., reading(s)
obtained are indicative/general area and not precise/
minute). No methods of preconditioning the surface
prior to measurements and no methods of character-
izing the basic electrostatic performance of materials,
such as tribocharging, resistance, and decay rate are a
part of this document. Measurements made using this
guide on the same surface or object may differ due to
differences in the environment or history of the surface
or object between the times any two measurements are
made.
4 Referenced Standards
4.1 None.
5 Terminology
5.1 electrostatic discharge (ESD)the rapid
spontaneous transfer of electrostatic charge induced by
a high electrostatic field.
5.2 ground a conducting connection between an
object, electrical equipment, and earth, such as the
portion of an electrical circuit of the same electrical
potential as earth.
5.3 grounded connected to earth or some other
conducting body that serves in the place of earth.
6 Safety
6.1 Measurements of Very High Static Potentials (>
30,000 Volts) Measurements of very high static
potentials (> 30,000 V) may need to be done at larger
distances to avoid exceeding the measurement range of
the meter and/or an ESD event to the meter.
6.2 Measurements on Moving Objects or Surfaces
Care should be taken, when attempting to read
electrostatic charges on moving objects or surfaces, to
maintain correct distance and avoid any contact; this is
to assure “good” readings with no mechanical damage
or personal injury.
6.3 Measurements Using Electrostatic Voltmeters
Avoid handling electrostatic voltmeter probes during