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SEMI F51-0200 © SEMI 2000 1 SEMI F51-0200 GUIDE FOR ELASTOMETRIC SEALING TECHNOLOGY This g u ide w as technica ll y a pproved by the Global Facilitie s Committee and is t he direct responsibility of the North A merican F…
SEMI F50-0200 © SEMI 2000 12
Table R2-1 Count of Events in Each Bin
Time Bin in Seconds
Magnitude Bin 0.0s < 0.2s 0.2s < 0.4s 0.4s < 0.6s 0.6s < 0.8s >/= 0.8s
> 80−90%
11111
> 70−80%
11111
> 60−70%
11111
> 50−60%
11111
> 40−50%
11
111
> 30−40%
11
111
> 20−30%
11
111
> 10−20%
11
111
0−10%
11
111
Table R2-2 Sum of Events Worse Than or Equal to Each Magnitude and Duration
Magnitude Time in Seconds
% of Nominal
Voltage
0.0s 0.2s 0.4s 0.6s 0.8s
90% 45 36 27 18 9
80% 40 32 24 16 8
70% 35 28 21 14 7
60% 30 24 18 12 6
50% 25 20
15
10 5
40% 20 16 12 8 4
30% 15 12 9 6 3
20%108642
10%54321
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SEMI F51-0200 © SEMI 20001
SEMI F51-0200
GUIDE FOR ELASTOMETRIC SEALING TECHNOLOGY
This guide was technically approved by the Global Facilities Committee and is the direct responsibility of the
North American Facilities Committee. Current edition approved by the North American Regional Standards
Committee on December 15, 1999. Initially available on www.semi.org February 2000; to be published
February 2000.
1 Purpose
1.1 The purpose of this document is to introduce a
basic guide for the use of seals in semiconductor
fabrication equipment. Also, to introduce the diverse
chemical and physical requirements for the many
process applications, and to reduce cost of ownership
and improve up-time through the use of appropriate
sealing materials. It is important that equipment users,
suppliers, OEMs, and seal manufacturers use the same
terminology and that communication can take place at
the same level so that actual performance of the
equipment can be discussed.
2 Scope
2.1 This guide is applicable to the use of seals in
specific operating environments used in the fabrication
of semiconductor devices. The guide will aid in
defining the seal parameters for the various process
environments. It includes those elastomeric seals that
come in contact with process liquids and or gases.
2.2 This guide does not purport to address safety
issues, if any, associated with its use. It is the
responsibility of the users of this guide to establish
appropriate safety and health practices and determine
the applicability of regulatory limitations prior to use.
3 Limitations
3.1 The application of this guide is limited to
elastomeric sealing technology performance as used in
semiconductor manufacturing and related process
equipment.
4 Referenced Standards
4.1 SEMI Standards
SEMI C3 — Specifications for Gases
SEMI D9 — Definitions for Flat Panel Display
Substrates
SEMI E45 — Test Method for the Determination of
Inorganic Contamination from Minienvironments
SEMI F21 — Classification of Airborne Molecular
Contaminant Levels in Clean Environments
SEMI P5 — Specification for Pellicles
SEMI S4 — Safety Guideline for the
Segregation/Separation of Gas Cylinders Contained in
Cabinets
NOTE 1: As listed or revised, all documents cited shall be the
latest publications of adopted standards.
5 Terminology
5.1 Abbreviations and Acronyms
5.1.1 ATM — Atmospheric
5.1.2 BCD Bulk Chemical Dispensing System
5.1.3 CVD — Chemical Vapor Depo sition
5.1.4 DI — De-ionized
5.1.5 HDP — High Density Plasma
5.1.6 HF — Hydrofluoric Acid
5.1.7 LPCVD — Low Pressure Chemical Vapor
Deposition
5.1.8 MOCVD — Metal Organic Ch emical Vapor
Deposition
5.1.9 OEM — Original Equipment Manufacturer
5.1.10 PPB — Parts per Billion
5.1.11 PVD — Physical Vapor Deposition
5.1.12 RF — Radio Frequency
5.1.13 RTP — Rapid Thermal Process
5.1.14 T.O.C. (total organic carbons) hydrocarbons
which can appear in a process from a variety of sources
including breakdown of O-ring materials.
5.1.15 UPDI — Ultra Pure De-ionize d
5.1.16 UV — Ultraviolet
5.2 Definitions
5.2.1 acid
a corrosive material whose chemical
reaction characteristic is that of an electron acceptor
(SEMI F21, SEMI S4).
5.2.2 anion a negatively charged ion that is
attracted to an anode in electrolysis.
SEMI F51-0200 © SEMI 2000 2
5.2.3 cation a positively charged ion; an ion that is
attracted to the cathode in electrolysis. These are
typically ions of metallic elements.
5.2.4 chemical/mechanical wear injury to the
surface of an object or partial obliteration of or altering
caused by rubbing, stress or chemical/mechanical use.
5.2.5 chemical breakdown the degradation of a seal
as the result of a chemical reaction.
5.2.6 chemical property
chemical durability is a
measure of corrosion or attack of a glass surface when
subjected to a specific reagent, such as acid, base, or
water at a specific concentration for a specific time and
temperature (SEMI D9).
5.2.7 chemical reaction a process that involves
change in the structure of ions or molecules.
5.2.8 compatibility the ability of the molecules of a
seal to coexist with process chemistries without the
degradation of either.
5.2.9 corrosives a chemical that c auses visible
destruction of, or irreversible alterations in, living tissue
by chemical action at the site of contact. A chemical is
considered to be corrosive if, when tested on the intact
skin of albino rabbits by the method described in the
U.S. Department of Transportation in Appendix A to 49
CFR 173, it destroys or changes irreversibly the
structure of the tissue at the site of contact following an
exposure period of four hours. This term shall not refer
to action on inanimate surfaces (SEMI S4).
5.2.10 de-ionized water
(specified with specific
resistivity ≥ 18 MΩcm, cations: Na, Fe, Ca ≤ 0.2 µg/l)
(SEMI E45).
5.2.11 degradation a chemical reaction leading to
the reduction to a simpler molecular structure. See also
chemical breakdown.
5.2.12 ion an atom or group of ato ms that has lost
or gained one or more electrons.
5.2.13 leachables atoms or molecules which escape
from the body of a material under vacuum, heat or
chemical attack.
5.2.14 leak rate rate at which an e nvironment loses
a vacuum (Millitorr litres/second).
5.2.15 outgassing process whereby molecules of air
or other gases adhere to the surface of the vacuum
vessel or component therein and become liberated
under vacuum conditions. Sometimes known as
degassing.
5.2.16 oxidizer gas a gas which will support
combustion or increase the burning rate of a
combustible material with which it may come in contact
(SEMI S4).
5.2.17 particle materials which can be
distinguished from the film whether on the film surface
or embedded in the film (SEMI P5).
5.2.18 particle generation molecu les of material
generated due to degradation of a material.
5.2.19 permeation the tendency for a gas or liquid
to pass through a seal structure by osmosis or diffusion.
5.2.20 silica silicon dioxide, occur ring as quartz,
etc.
5.2.21 swell resistance the ability of a material to
resist increasing its volume when it has been immersed
in a liquid or exposed to vapor.
5.2.22 temperature a measure of h eat usually
expressed in degrees Celsius or Fahrenheit.
Temperature values shall be expressed in degrees
Celsius (SEMI C3).
5.2.23 weight loss reduction in ma ss of a sealing
compound through the result of a chemical or physical
reaction.
5.2.24 vacuum integrity a subjecti ve measure of the
efficiency of a vacuum vessel.
6 Related Documents
6.1 SEMI Standard
SEMI E49 Guide for Standard Performance,
Practices, and Sub-Assembly for High Purity Piping
Systems and Final Assembly for Semiconductor
Manufacturing Equipment
SEMI F40 Practice for Preparing Liquid Chemical
Distribution Components for Chemical Testing
6.2 Other Documents
Millipore 9
th
Annual Microelectronics Technical
Symposium, May 20, 1991, “Contamination Derived
from O-Rings”, Robert Matthews
1
RTP’97 5
th
International Conference on Advanced
Thermal Processing of Semiconductors, “Sealing
Technology for the Semiconductor Industry”, Dalia
Vernikovsky
2
1 Millipore Corporation, 80 Ashby Road, Bedford, MA, USA, 01730-
2271
2 Greene, Tweed & Co., 2157D O’Toole Avenue, San Jose, CA,
USA, 95131