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SEMI C56-0305 © SEMI 2005 1 SEMI C56-0305 SPECIFICATIONS AND GUIDELIN ES FOR DICHLORO SILANE (SiH 2 Cl 2 ) This specification was technically approved b y the Globa l Gases Com mittee and is the direct responsibility of …

5 SEMI C55-1104 © SEMI 2004

Figure 3

Potential Metals Sample Preparation System-

Filtration Method

8.3.5 Operating Procedure

8.3.5.1 Follow the procedures specified in the

instrument manufacturer’s manual for operating the

ICP-MS and introducing the sample solution.

8.3.5.2 Read and record the concentration of each

relevant metal, in ppmw. The result obtained shall not

exceed the value specified in Section 5 of this

specification.

NOTICE: SEMI makes no warranties or

representations as to the suitability of the standards set

forth herein for any particular application. The

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product data sheets, and other relevant literature,

respecting any materials or equipment mentioned

herein. These standards are subject to change without

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SEMI C56-0305 © SEMI 2005 1

SEMI C56-0305

SPECIFICATIONS AND GUIDELINES FOR DICHLOROSILANE (SiH

)

This specification was technically approved by the Global Gases Committee and is the direct responsibility of

the North American Gases Committee. Current edition approved by the North American Regional Standards

Committee on November 4, 2004. Initially available at

www.semi.org January 2005; to be published March

2005.

NOTICE: This document replaced C3.18 and C3.31 in 2005.

1 Purpose

1.1 The purpose of this document is to provide a series of specifications for different grades of dichlorosilane

(SiH

) that are used in the semiconductor industry.

2 Scope

2.1 This document covers requirements for all grades of dichlorosilane (SiH

) used in the semiconductor

industry.

2.2 If analytical methods are not complete, the requirements are presented as a guideline.

NOTICE: This standard does not purport to address safety issues, if any, associated with its use. It is the

responsibility of the users of this standard to establish appropriate safety and health practices and determine the

applicability of regulatory or other limitations prior to use.

3 Description

3.1 Dichlorosilane is a flammable, corrosive, colorless liquid which hydrolizes in the presence of moisture. It

oxidizes readily and rapidly to release hydrogen chloride. It is easily ignited in the presence of air.

4 Referenced Standards

4.1 SEMI Standards

SEMI C1 — Specifications for Reagents

SEMI C3 — Specifications for Gases

NOTICE: Unless otherwise indicated, all documents cited shall be the latest published versions.

5 Terminology

5.1 Terminology appropriate to this standard is defined in SEMI C3.

6 Requirements

6.1 Purity and other requirements for the various grades of dichlorosilane are given in Table 1.

SEMI C56-0305 © SEMI 2005 2

Table 1 Impurity and Other Requirements for Various Grades of Dichlorosilane

Previous SEMI Reference #

C3.18-1102

(Specification)

C3.31-1102

(Specification)

Purity 97% 99%

Impurities Maximum Acceptable Level

All Other Chlorosilanes

(Monochlorosilane, Silicon

Tetrachloride, Trichlorosilane)

3% (liquid phase) 1% (liquid phase)

Aluminum 1.0 ppbw (vapor phase derived) 1.0 ppbw (vapor phase derived)

Arsenic 0.5 ppbw (vapor phase derived) 0.2 ppbw (vapor phase derived)

Boron 0.3 ppbw (vapor phase derived) 0.1 ppbw (vapor phase derived)

Carbon 10 ppmw (vapor phase derived) 1 ppmw (vapor phase derived)

Iron 50 ppbw (liquid phase) 50 ppbw (liquid phase)

Phosphorus 0.3 ppbw (vapor phase derived) 0.3 ppbw (vapor phase derived)

An analysis of significant figures has not been considered. The number of significant figures will be based on analytical accuracy and the

precision of the provided procedure.

Monochlorosilane not to exceed 0.5%

This specification applies to the appropriate phase of the cylinder as delivered.

The liquid phase purity is to be based on the chlorosilane determination. In addition, argon + helium are to be controlled in the vapor phase to

less than 0.5%. This argon + helium determination will not affect the percent purity determination.

Initial purging of the vapor phase is recommended to reduce inert gas content used in the cylinder fill procedure.

Analytical procedures for the doping elements, metals and selected impurities are to be determined between the user and supplier at the present

time.

7 Electrical Requirements

7.1 Electrical requirements for the various grades of dichlorosilane are given in Table 2

Table 2 Electrical Requirements for Various Grades of Dichlorosilane

Previous SEMI Reference #

C3.18-1102

(Specification)

C3.31-1102

(Specification)

Resistivity

Greater than 50 ohm-cm (n-type)

Greater than 150 ohm-cm (n-type)

The resistivity measurement technique is to be determined between supplier and user.

Monocrystalline silicon formed from this material, not the material itself.

8 Physical Constants

8.1 The physical constants of dichlorosilane are given in Table 3 (for information only).

Table 3 Physical Constants of Dichlorosilane (for information only)

Metric Units US Units

Molecular weight 100.99 100.99

Boiling point at 1 atm 8.2°C 46.8°F

Density of gas at 25°C (77°F) and 1 atm 4.168 kg/m

0.260 lb/ft

Specific gravity of gas at 21.1°C (70°F) and 1 atm

(air = 1)

3.48 3.48

Density of liquid at 25°C (77°F) 122 kg/m

7.62 lb/ft