semi合集-English.pdf - 第4830页

SEMI M1-0305 © SEMI 1978, 2005 6 SEMI MF951 — Test Method for Determination of Radi al Interstitial Oxygen Variation in Silicon Wafers SEMI MF1049 — Practice for Shallow Etch Pit Detection on Silicon Wafers SEMI MF1152 —…

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SEMI M1-0305 © SEMI 1978, 2005 5
SEMI M20 — Practice for Establishing a Wafer Coordinate System
SEMI M24 — Specification for Polished Monocrystalline Silicon Premium Wafers
SEMI M26 — Guide for the Re-use of 100, 125, 150, and 200 mm Wafer Shipping Boxes Used to Transport Wafers
SEMI M33 — Test Method for the Determination of Residual Surface Contamination on Silicon Wafers by Means
of Total Reflection X-Ray Fluorescence Spectroscopy (TXRF)
SEMI M34 — Guide for Specifying SIMOX Wafers
SEMI M35 — Guide for Developing Specifications for Silicon Wafer Surface Features Detected by Automated
Inspection
SEMI M38 — Specification for Polished Reclaimed Silicon Wafers
SEMI M40 — Guide for Measurement of Surface Roughness of Planar Surfaces on Silicon Wafer
SEMI M41 — Specification of Silicon-on-Insulator (SOI) for Power Device/ICs
SEMI M43 — Guide for Reporting Wafer Nanotopography
SEMI M44 — Guide to Conversion Factors for Interstitial Oxygen in Silicon
SEMI M45 — Provisional Specification for 300 mm Wafer Shipping System
SEMI M47 — Specification for Silicon-on-Insulator (SOI) Wafers for CMOS LSI Applications
SEMI M53 — Practice for Calibrating Scanning Surface Inspection Systems Using Depositions of Monodisperse
Polystyrene Latex Sphere on Unpatterned Semiconductor Wafer Surfaces
SEMI M57 — Guide for Specifying Silicon Annealed Wafers
SEMI M58 — Test Method for Evaluating DMA-Based Particle Deposition Systems and Processes
SEMI M59 — Terminology for Silicon Technology
SEMI MF26 — Test Methods for Determining the Orientation of a Semiconductive Single Crystal
SEMI MF28 — Test Methods for Minority-Carrier Lifetime in Bulk Germanium and Silicon by Measurement of
Photoconductive Decay
SEMI MF42 — Test Methods for Conductivity Type of Extrinsic Semiconducting Materials
SEMI MF81 — Test Method for Measuring Radial Resistivity Variation on Silicon Wafers
SEMI MF84 — Test Method for Measuring Resistivity of Silicon Wafers with an In-Line Four-Point Probe
SEMI MF391 — Test Methods for Minority Carrier Diffusion Length in Extrinsic Semiconductors by Measurement
of Steady-State Surface Photovoltage
SEMI MF523 — Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces
SEMI MF525 — Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe
SEMI MF533 — Test Method for Thickness and Thickness of Variation of Silicon Wafers
SEMI MF534 — Test Method for Bow of Silicon Wafers
SEMI MF657 —Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact
Scanning
SEMI MF671 — Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic Materials
SEMI MF673 — Test Methods for Measuring Resistivity of Semiconductor Slices or Sheet Resistance of
Semiconductor Films with a Noncontact Eddy-Current Gage
SEMI MF847 — Test Methods for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon
Wafers by X-Ray Techniques
SEMI MF928 — Test Methods for Edge Contour of Circular Semiconductor Wafers and Rigid Disk Substrates
SEMI M1-0305 © SEMI 1978, 2005 6
SEMI MF951 — Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers
SEMI MF1049 — Practice for Shallow Etch Pit Detection on Silicon Wafers
SEMI MF1152 — Test Method for Dimensions of Notches on Silicon Wafers
SEMI MF1188 — Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption with Short
Baseline
SEMI MF1239 — Test Method for Oxygen Precipitation Characteristics of Silicon Wafers by Measurement of
Interstitial Oxygen Reduction
SEMI MF1366 — Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by
Secondary Ion Mass Spectrometry
SEMI MF1388 — Test Method for Generation Lifetime and Generation Velocity of Silicon Material by
Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors
SEMI MF1390 — Test Method for Measuring Warp on Silicon Wafers by Automated Non-contact Scanning
SEMI MF1391 — Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption
SEMI MF1451 — Test Method for Measuring Sori on Silicon Wafers by Automated Non-contact Scanning
SEMI MF1528 — Test Method for Measuring Boron Contamination in Heavily Doped n-Type Silicon Substrates by
Secondary Ion Mass Spectrometry
SEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Total Thickness Variation on Silicon
Wafers by Automated Non-contact Scanning
SEMI MF1535 — Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement
of Photoconductivity Decay by Microwave Reflectance
SEMI MF1617 — Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and Epi
Substrates by Secondary Ion Mass Spectrometry
SEMI MF1619 — Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared
Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle
SEMI MF1726 — Practice for Analysis of Crystallographic Perfection of Silicon Wafers
SEMI MF1727 — Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers
SEMI MF1809 — Guide for Selection and Use for Etching Solutions to Delineate Structural Defects in Silicon
SEMI MF1982 — Test Methods for Analyzing Organic Contaminants on Silicon Wafer Surfaces by Thermal
Desporption Gas Chromatography
SEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers
SEMI T1 — Specification for Back Surface Bar Code Marking of Silicon Wafers
SEMI T2 — Specification for Marking of Wafers with a Two-Dimensional Matrix Code Symbol
SEMI T3 — Specification for Wafer Box Labels
SEMI T6 — Procedure and Format for Reporting of Test Results by Electronic Data Interchange (EDI)
SEMI T7 — Specification for Back Surface Marking of Double-Side Polished Wafers with a Two-Dimensional
Matrix Code Symbol
3.2 ASTM Standards
1
D 523 — Standard Test Method for Specular Gloss
E 122 — Standard Practice for Choice of Sample Size to Estimate the Average Quality of a Lot or Process
1 ASTM International, 100 Barr Harbor Drive, West Conshohocken, Pennsylvania 19428-2959, USA. Telephone: 610.832.9585, Fax:
610.832.9555, Website:
www.astm.org
SEMI M1-0305 © SEMI 1978, 2005 7
3.3 JEITA (formerly JEIDA) Standards
2
EM-3401 (43) — TERMINOLOGY OF SILICON WAFER FLATNESS
EM-3501 (18)— Standard Methods for Determining the Orientation of a Semiconductive Silicon Single Crystal
EM-3502 (53) — Test method for recombination lifetime in silicon wafers by measurement of photoconductivity
decay by microwave reflectance
EM-3503 (56)— Standard test method for substitutional atomic carbon content of silicon by infrared absorption
EM-3504 (61) — Standard test method for interstitial atomic oxygen content of silicon by infrared absorption
EM-3601 — Standard Specification for Dimensional Properties of Silicon Wafers with Specular Surfaces
EM-3602 (27) — Standard specification for dimensional properties of silicon wafers with specular surfaces
EM-3603 — Standard of SOI wafers and metrology
3.4 JIS Standards
3
H 0604 — Measuring of minority-carrier life time in silicon single crystal by photoconductive decay method
H 0607 — Determination of Conductivity Type in Germanium by Thermoelectromotive Method
H 0609 — Test methods of crystalline defects in silicon by preferential etch techniques
H 0611 — Methods of measurement of thickness, thickness variation and bow of silicon wafer
H 0614 — Visual inspection for silicon wafers with specular surfaces
H 0615 — Test method for determination of impurity concentrations in silicon crystal by photoluminescence
spectroscopy
Z 8741 — Specular glossiness — Methods of measurement
3.5 DIN Standards
4
50431 — Measurement of the Electrical Resistivity of Silicon or Germanium Single Crystals by Means of the Four-
Point-Probe Direct Current Method with Collinear Four-Probe Array
50432 — Determination of the Conductivity Type of Silicon or Germanium by Means of Rectification Test or Hot-
Probe
50433/1 — Determination of the Orientation of Single Crystals by Means of X-Ray Diffraction
50433/2 — Determination of the Orientation of Single Crystals by Means of Optical Reflection Figure
50433/3 — Determination of the Orientation of Single Crystals by Means of Laue Back Scattering
50434 — Determination of Crystal Defects in Monocrystalline Silicon Using Etching Techniques on {111} and
{100} Surfaces
50435 — Determination of the Radial Resistivity Variation of Silicon or Germanium Slices by Means of a Four-
Point-DC-Probe
50438/1 — Determination of Impurity Content in Silicon by Infrared Absorption: Oxygen
50438/2 — Determination of Impurity Content in Silicon by Infrared Absorption: Carbon
50440/1 — Measurement of Recombination Carrier Lifetime in Silicon Single Crystals by Means of
Photoconductive Decay Method; Measurement on Bar-Shaped Test Samples
2 Japan Electronics and Information Technology Industries Association, 3
rd
floor, Mitsui Sumitomo Kaijo Bldg. Annex, 11, Kanda-Surugadai 3-
chome, Chiyoda-ku, Tokyo 101-0062, Japan. Telephone: 81.3.3518.6434; Fax: 81.3.3295.8727; Website:
www.jeita.or.jp
3 Japanese Industrial Standards, Available through the Japanese Standards Association, 1-24, Akasaka 4-Chome, Minato-ku, Tokyo 107-8440,
Japan. Telephone: 81.3.3583.8005; Fax: 81.3.3586.2014 Website:
www.jsa.or.jp
4 Deutches Institut für Normung e.V., standards are available in both English and German editions from Beuth Verlag GmbH, Burggrafenstrasse
6, 10787 Berlin, Germany, Telephone: 49.30.2601-0, Fax: 49.30.2601.1263, Website:
www.beuth.de