semi合集-English.pdf - 第4831页

SEMI M1-0305 © SEMI 1978, 2005 7 3.3 JEITA ( formerly JEIDA ) St andards 2 EM-3401 (43) — TERMINOLOGY OF SILI CON WAFER FLATNESS EM-3501 (18)— Standard Methods for Determining the Or ientation of a Semiconductive Silicon…

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SEMI M1-0305 © SEMI 1978, 2005 6
SEMI MF951 — Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers
SEMI MF1049 — Practice for Shallow Etch Pit Detection on Silicon Wafers
SEMI MF1152 — Test Method for Dimensions of Notches on Silicon Wafers
SEMI MF1188 — Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption with Short
Baseline
SEMI MF1239 — Test Method for Oxygen Precipitation Characteristics of Silicon Wafers by Measurement of
Interstitial Oxygen Reduction
SEMI MF1366 — Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by
Secondary Ion Mass Spectrometry
SEMI MF1388 — Test Method for Generation Lifetime and Generation Velocity of Silicon Material by
Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors
SEMI MF1390 — Test Method for Measuring Warp on Silicon Wafers by Automated Non-contact Scanning
SEMI MF1391 — Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption
SEMI MF1451 — Test Method for Measuring Sori on Silicon Wafers by Automated Non-contact Scanning
SEMI MF1528 — Test Method for Measuring Boron Contamination in Heavily Doped n-Type Silicon Substrates by
Secondary Ion Mass Spectrometry
SEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Total Thickness Variation on Silicon
Wafers by Automated Non-contact Scanning
SEMI MF1535 — Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement
of Photoconductivity Decay by Microwave Reflectance
SEMI MF1617 — Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and Epi
Substrates by Secondary Ion Mass Spectrometry
SEMI MF1619 — Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared
Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle
SEMI MF1726 — Practice for Analysis of Crystallographic Perfection of Silicon Wafers
SEMI MF1727 — Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers
SEMI MF1809 — Guide for Selection and Use for Etching Solutions to Delineate Structural Defects in Silicon
SEMI MF1982 — Test Methods for Analyzing Organic Contaminants on Silicon Wafer Surfaces by Thermal
Desporption Gas Chromatography
SEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers
SEMI T1 — Specification for Back Surface Bar Code Marking of Silicon Wafers
SEMI T2 — Specification for Marking of Wafers with a Two-Dimensional Matrix Code Symbol
SEMI T3 — Specification for Wafer Box Labels
SEMI T6 — Procedure and Format for Reporting of Test Results by Electronic Data Interchange (EDI)
SEMI T7 — Specification for Back Surface Marking of Double-Side Polished Wafers with a Two-Dimensional
Matrix Code Symbol
3.2 ASTM Standards
1
D 523 — Standard Test Method for Specular Gloss
E 122 — Standard Practice for Choice of Sample Size to Estimate the Average Quality of a Lot or Process
1 ASTM International, 100 Barr Harbor Drive, West Conshohocken, Pennsylvania 19428-2959, USA. Telephone: 610.832.9585, Fax:
610.832.9555, Website:
www.astm.org
SEMI M1-0305 © SEMI 1978, 2005 7
3.3 JEITA (formerly JEIDA) Standards
2
EM-3401 (43) — TERMINOLOGY OF SILICON WAFER FLATNESS
EM-3501 (18)— Standard Methods for Determining the Orientation of a Semiconductive Silicon Single Crystal
EM-3502 (53) — Test method for recombination lifetime in silicon wafers by measurement of photoconductivity
decay by microwave reflectance
EM-3503 (56)— Standard test method for substitutional atomic carbon content of silicon by infrared absorption
EM-3504 (61) — Standard test method for interstitial atomic oxygen content of silicon by infrared absorption
EM-3601 — Standard Specification for Dimensional Properties of Silicon Wafers with Specular Surfaces
EM-3602 (27) — Standard specification for dimensional properties of silicon wafers with specular surfaces
EM-3603 — Standard of SOI wafers and metrology
3.4 JIS Standards
3
H 0604 — Measuring of minority-carrier life time in silicon single crystal by photoconductive decay method
H 0607 — Determination of Conductivity Type in Germanium by Thermoelectromotive Method
H 0609 — Test methods of crystalline defects in silicon by preferential etch techniques
H 0611 — Methods of measurement of thickness, thickness variation and bow of silicon wafer
H 0614 — Visual inspection for silicon wafers with specular surfaces
H 0615 — Test method for determination of impurity concentrations in silicon crystal by photoluminescence
spectroscopy
Z 8741 — Specular glossiness — Methods of measurement
3.5 DIN Standards
4
50431 — Measurement of the Electrical Resistivity of Silicon or Germanium Single Crystals by Means of the Four-
Point-Probe Direct Current Method with Collinear Four-Probe Array
50432 — Determination of the Conductivity Type of Silicon or Germanium by Means of Rectification Test or Hot-
Probe
50433/1 — Determination of the Orientation of Single Crystals by Means of X-Ray Diffraction
50433/2 — Determination of the Orientation of Single Crystals by Means of Optical Reflection Figure
50433/3 — Determination of the Orientation of Single Crystals by Means of Laue Back Scattering
50434 — Determination of Crystal Defects in Monocrystalline Silicon Using Etching Techniques on {111} and
{100} Surfaces
50435 — Determination of the Radial Resistivity Variation of Silicon or Germanium Slices by Means of a Four-
Point-DC-Probe
50438/1 — Determination of Impurity Content in Silicon by Infrared Absorption: Oxygen
50438/2 — Determination of Impurity Content in Silicon by Infrared Absorption: Carbon
50440/1 — Measurement of Recombination Carrier Lifetime in Silicon Single Crystals by Means of
Photoconductive Decay Method; Measurement on Bar-Shaped Test Samples
2 Japan Electronics and Information Technology Industries Association, 3
rd
floor, Mitsui Sumitomo Kaijo Bldg. Annex, 11, Kanda-Surugadai 3-
chome, Chiyoda-ku, Tokyo 101-0062, Japan. Telephone: 81.3.3518.6434; Fax: 81.3.3295.8727; Website:
www.jeita.or.jp
3 Japanese Industrial Standards, Available through the Japanese Standards Association, 1-24, Akasaka 4-Chome, Minato-ku, Tokyo 107-8440,
Japan. Telephone: 81.3.3583.8005; Fax: 81.3.3586.2014 Website:
www.jsa.or.jp
4 Deutches Institut für Normung e.V., standards are available in both English and German editions from Beuth Verlag GmbH, Burggrafenstrasse
6, 10787 Berlin, Germany, Telephone: 49.30.2601-0, Fax: 49.30.2601.1263, Website:
www.beuth.de
SEMI M1-0305 © SEMI 1978, 2005 8
50441/1 — Determination of the Geometric Dimensions of Semiconductor Slices: Measurement of Thickness
50441/2 — Determination of the Geometric Dimensions of Semiconductor Slices: Testing of Edge Rounding
50441/3 — Measurement of the Geometric Dimensions of Semiconductor Slices; Determination of Flatness
Deviation of Polished Slices by Means of Multiple Beam Interference
50441/4 — Determination of the Geometrical Dimensions of Semiconductor Slices: Diameter and Flat Depth of
Slices
50443/1 — Recognition of Defects and Inhomogenities in Semiconductor Single Crystals by X-Ray Topography:
Silicon
50445 — Contactless Determination of the Electrical Resistivity of Semiconductor Wafers with the Eddy Current
Method
3.6 ANSI Standards
5
ANSI/ASQC Z1.4 — Sampling Procedures and Tables for Inspection by Attributes
ANSI/EIA 556-B — Outer Shipping Container Standard
3.7 ISO Standard
6
ISO 14706 — Surface chemical analysis — Determination of surface elemental contamination on silicon wafers by
total reflection X-ray fluorescence spectroscopy (TXRF)
NOTICE: Unless otherwise indicated, all documents cited shall be the latest published versions.
4 Terminology
4.1 Terms and acronyms associated with silicon wafers and silicon technology are listed and defined in SEMI M59.
5 Ordering Information
5.1 Purchase orders for silicon wafers furnished to this specification shall include the following items. These items
are indicated on the Silicon Wafer Specification Format for Order Entry, Parts 1 and 2, shown in Table 1 with a
symbol in the left-most column.
5.1.1 Growth Method.
5.1.2 Crystal Orientation.
5.1.3 Conductivity type.
5.1.4 Dopant.
5.1.5 Wafer surface orientation.
5.1.6 Resistivity.
5.1.7 Diameter.
5.1.8 Fiducial dimensions and orientation.
5.1.9 Edge profile.
5.1.10 Thickness and tolerance.
5.2 In addition, the purchase order must indicate the test method to be used in evaluating each of those items for
which alternate test procedures exist.
5.3 The following items must also be included in the purchase order:
5 American National Standards Institute, New York Office: 25 West 43rd Street, New York, NY 10036, USA. Telephone: 212.642.4900, Fax:
212.398.0023, Website:
www.ansi.org
6 International Organization for Standardization, ISO Central Secretariat, 1, rue de Varembé, Case postale 56, CH-1211 Geneva 20, Switzerland.
Telephone: 41.22.749.01.11; Fax: 41.22.733.34.30 Website:
www.iso.ch
.