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SEMI M6-1000 © SEMI 1981, 2000 1 SEMI M6-1000 SPECIFICA TION FOR SILICON W A FERS FOR USE A S PHOTOVOLTA IC SOLAR CELLS This s pecif ication was te chnically approv ed by the G lobal Silicon W afer Committee and is the d…
SEMI M4-1103 © SEMI 1978, 2003 5
9 Certification
9.1 Upon request of the purchaser in the contract or
order, a manufacturer’s or supplier’s certification that
the material was manufactured and tested in accordance
with this specification, together with a report of the test
results, shall be furnished at the time of shipment.
9.2 In the interest of controlling inspection costs, the
supplier and purchaser may agree that the material shall
be certified as “capable of meeting” certain
requirements. In this context, “capable of meeting”
shall signify that the supplier is not required to perform
the appropriate tests in Section 7; however, if the
purchaser performs the test and the material fails to
meet the requirements, the material may be subject to
rejection.
10 Packing and Marking
10.1 Special packing requirements shall be subject to
agreement between the user and supplier. Otherwise all
wafers shall be handled, inspected, and packed in such
a manner as to avoid chipping, scratches, and
contamination, and in accordance with the best industry
practices to provide protection against damage during
shipment.
10.2 The wafers supplied under these specifications
shall be identified by appropriately labeling the outside
of each box or container, and each subdivision thereof,
in which it may reasonably be expected that the wafers
will be stored prior to further processing. Identification
shall include supplier’s name and reference number,
purchaser’s part number, purchaser order number,
quantity, dopant, conductivity type of epitaxial layers,
resistivity and thickness of the epitaxial layer; the
reference number assigned by the supplier shall provide
ready access to information concerning the fabrication
history of the particular substrates in that lot. Such
information shall be retained on file at the
manufacturer’s facility for at least one month after that
particular lot has been accepted by the purchaser.
NOTICE: SEMI makes no warranties or
representations as to the suitability of the standards set
forth herein for any particular application. The
determination of the suitability of the standard is solely
the responsibility of the user. Users are cautioned to
refer to manufacturer’s instructions, product labels,
product data sheets, and other relevant literature
respecting any materials mentioned herein. These
standards are subject to change without notice.
The user’s attention is called to the possibility that
compliance with this standard may require use of
copyrighted material or of an invention covered by
patent rights. By publication of this standard, SEMI
takes no position respecting the validity of any patent
rights or copyrights asserted in connection with any
item mentioned in this standard. Users of this standard
are expressly advised that determination of any such
patent rights or copyrights, and the risk of infringement
of such rights, are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
f
the contents in whole or in part is forbidden without express written
consent of SEMI.
SEMI M6-1000 © SEMI 1981, 20001
SEMI M6-1000
SPECIFICATION FOR SILICON WAFERS FOR USE AS
PHOTOVOLTAIC SOLAR CELLS
This specification was technically approved by the Global Silicon Wafer Committee and is the direct
responsibility of the European Materials Committee. Current edition approved by the European Regional
Standards Committee on July 28, 2000. Initially available at www.semi.org September 2000; to be published
October 2000. Originally published in 1981; previously published in 1985.
NOTE: This document replaces the previous version of SEMI M6 and M6.1, M6.2, M6.3, M6.4, and M6.5 in
their entirety.
1 Purpose
1.1 This specification covers the r equirements for
silicon wafers for use in photovoltaic (PV) solar cell
manufacture.
2 Scope
2.1 The dimensional characteristic s, crystalline defects
and commonly used wafer electronic properties are
described. Two classes of crystalline silicon materials
are recognized: monocrystalline and multicrystalline.
2.2 This standard does not purport to address safety
issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine
the applicability of regulatory limitations prior to use.
2.3 SI (System International) units are used
throughout.
3 Referenced Standards
NOTE 1: The specification recognizes only two discrete
material forms monocrystalline and multicrystalline. In the
monocrystalline form one crystallographic orientation
describes the whole wafer and in the multicrystalline case
there is more than one crystallographic orientation present.
3.1 SEMI Standard
SEMI M1 — Specifications for Polished
Monocrystalline Silicon Wafers
3.2 ASTM Standards
1
E 122 — Standard Practice for Choice of Sample Size
to Estimate the Average for a Characteristic of a Lot or
Process
F 26 — Standard Test Methods for Determining the
Orientation of a Semiconductive Single Crystal
F 28 — Standard Test Methods for Minority-Carrier
Lifetime in Bulk Germanium and Silicon by
Measurement of Photoconductivity Decay
1 American Society for Testing and Materials, 100 Barr Harbor
Drive, West Conshohocken, PA 19428-2959
F 42 — Standard Test Methods for Conductivity Type
of Extrinsic Semiconducting Materials
F 43 — Standard Test Methods for Resistivity of
Semiconductor Materials
F 84 — Standard Test Method for Measuring
Resistivity of Silicon Wafers with an In-Line Four-
Point Probe
F 391 — Standard Test Methods for Minority Carrier
Diffusion Length in Extrinsic Semiconductors by
Measurement of Steady-State Surface Photovoltage
F 398 — Standard Test Method for Majority Carrier
Concentration in Semiconductors by Measurement of
Wavenumber or Wavelength of the Plasma Resonance
Minimum
F 533 — Standard Test method for Thickness and
Thickness Variation of Silicon Wafers
F 613 — Standard Test Method for Measuring
Diameter of Semiconductor Wafers
F 657 — Standard Test Method for Measuring Warp
and Total Thickness Variation on Silicon Wafers by
Noncontact Scanning
F 673 — Standard Test Methods for Measuring
Resistivity of Semiconductor Slices or Sheet Resistance
of Semiconductor Films with a Noncontact Eddy-
Current Gage
F 1188 — Standard Test Method for Interstitial Atomic
Oxygen Content of Silicon by Infrared Absorption
F 1391 — Standard Test Method for Substitutional
Atomic Carbon Content of Silicon by Infrared
Absorption
F 1535 — Standard Test Method for Carrier
Recombination Lifetime in Silicon Wafers by
Noncontact Measurement of Photoconductivity Decay
by Microwave Reflectance
F 1619 — Standard Test Method for Measurement of
Interstitial Oxygen Content of Silicon Wafers by
Infrared Absorption Spectroscopy with p-Polarized
Radiation Incident at the Brewster Angle
SEMI M6-1000 © SEMI 1981, 2000 2
3.3 DIN Standards
2
50430 — Messung des spezifischen elektrischen
Widerstandes von stabformigen Einkristallen aus
Silicium oder Germanium mit dem Zwei-Sonden-
Gleichstrom-Verfahren (Measurement of the Electrical
Resistivity of Silicon or Germanium single Crystals in
Bars by means of the Two-Point-Probe Direct Current
Method)
50431 — Messung des spezifischen elektrischen
Widerstandes von Einkristallen aus Silicium oder
Germanium mit dem Vier-Sonden-Gleichstrom-
Verfahren bei linearer Anordnung der Sonden
(Measurement of the Electrical Resistivity of Silicon or
Germanium Single Crystals by Means of the Four-
Point-Probe Direct Current method with collinear Four
Probe Array)
50432 — Bestimmung des Leitungstyps von Silicium
oder Germanium mittels Richttest oder Thermosonde
(Determination of the Conductivity Type of Silicon or
Germanium by Means of Rectification Test or Hot-
Probe)
50433-1 — Bestimmung der Orientierung von
Einkristallen mit einem Roentgengoniometer
(Determining the orientation of Single Crystals by
Means of X-Ray Diffraction)
50433-2 — Bestimmung der Orientierung von
Einkristallen nach der Lichtfigurenmethode
(Determining the orientation of Single crystals by
Means of Optical Reflection Figure)
50433-3 — Bestimmung der Orientierung von
Einkristallen mittels Laue-Rueckstrahl-Verfahren
(Determination of the Orientation of Single Crystals by
Means of Laue Back Scattering)
50438-1 — Bestimmung des Verunreinigungsgehaltes
in Silicium mittels lnfrarot-Absorption - Teil 1:
Sauerstoff (Determination of impurity Content in
silicon by Infrared Absorption - Part 1: oxygen)
50438-2 — Bestimmung des Verunreinigungsgehaltes
in Silicium mittels Infrarot-Absorption; Kohlenstoff
(Determination of Impurity Content in Silicon by
infrared Absorption; Carbon)
50441-1 — Messung der geometrischen Dimensionen
von Halbleiterscheiben - Teil 1: Dicke und
Dickenvariation (Determination of the Geometric
Dimensions of Semiconductor Wafers; Part 1:
Measurement of Thickness)
2 Deutches Institut für Normung e.V., Beuth Verlag GmbH,
Burggrafenstrasse 4-10, D-10787 Berlin, Germany
3.4 ASQC standard
3
ANSI/ASQC Z1.4 — Sampling Procedures and Tables
for Inspection by Attributes
3.5 JEIDA standard
4
JEIDA-53 — Test Method for Carrier Recombination
Lifetime in Silicon Wafers by Measurement of
Photoconductivity Decay by Microwave Reflectance
NOTE 2: As listed or revised, all documents shall be the
latest publications of adopted standards.
4 Terminology
4.1 dopant — A chemical element , usually from the
third or fifth columns of the periodic table, incorporated
in trace amounts in a semiconductor crystal to establish
its conductivity type and resistivity. Common doping
elements are boron and phosphorous.
4.2 lot — For the purposes of this document, (a) all of
the wafers of nominally identical size and
characteristics contained in a single shipment, or (b)
subdivisions of large shipments consisting of wafers as
listed above which have been identified by the supplier
as constituting a lot.
4.3 monocrystalline — (synonym: single crystal) A
body of crystalline material that contains no large-angle
boundaries or twin boundaries.
4.4 multicrystalline — A body of crystalline material
that contains large-angle boundaries or twin boundaries.
Most crystals of this body have dimensions in the
millimeter up to centimeter range.
5 Ordering Information
5.1 Purchase orders for silicon wa fers furnished to this
specification shall include the following items:
5.1.1 Nominal dimensions,
5.1.2 Either monocrystalline or mult icrystalline,
5.1.3 Crystal growth method,
5.1.4 Surface orientation, crystal pla nes for
monocrystalline wafers
5.1.5 Conductivity type and dopant,
NOTE 3: The dopant is difficult to ascertain in the finished
wafers. Verification test procedures or certification (see
Section 9) shall be agreed upon between the supplier and the
purchaser.
5.1.6 Resistivity or resistivity range,
3 American Society for Quality Control, 611 East Wisconsin Avenue,
Milwaukee, WI 53202
4 Japan Electronic Industry Development Association, 3-5-8
Shibakoen, Minato-ku, Tokyo 105, Japan