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SEMI M8-0703 © SEMI 1984, 2003 2 5 Ordering Information 5.1 Small Diamet er Wafers 5.1.1 Item s that may be specified when orderi ng silicon wafers are listed in SEMI M18. Not all of these items are required for orderi n…

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SEMI M8-0703 © SEMI 1984, 2003 1
SEMI M8-0703
SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON TEST
WAFERS
This specification was technically approved by the Global Silicon Wafer Committee and is the direct
responsibility of the North American Silicon Wafer Committee. Current edition approved by the North
American Regional Standards Committee on April 11, 2003. Initially available at www.semi.org June 2003;
to be published July 2003. Originally published in 1984; previously published March 2001.
NOTICE: This document was completely rewritten in
2003.
1 Purpose
1.1 This specification covers requirements for virgin
silicon test wafers to be used for mechanical testing,
and routine process monitoring in semiconductor
manufacturing.
2 Scope
2.1 This specification covers dimensional and
crystallographic properties of monocrystalline virgin
silicon test wafers together with selected electrical and
surface defect characteristic.
2.2 This specification covers virgin test wafers in all
standard wafer diameters from 2 inch to 300 mm. It
classifies test wafers according to the items specified.
It provides three classes of smaller diameter test wafers
(through 125 mm), and two classes of larger diameter
test wafers (from 150 mm).
2.3 This specification does not cover test wafers
intended for applications placing higher demands on
silicon wafers, such as particle counting, measuring
resolution in a photolithography process, or monitoring
metallic contamination; for wafers to be used in these
applications, the user should reference SEMI M24.
2.4 For referee purposes, U.S. customary units shall be
used for wafers of 2- and 3-inch nominal diameter and
SI (System International), commonly called metric
units, for 100 mm and larger diameter wafers.
NOTICE: This standard does not purport to address
safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine
the applicability of regulatory or other limitations prior
to use.
3 Referenced Standards
3.1 SEMI Standards
SEMI M1 — Specifications for Polished
Monocrystalline Silicon Wafers
SEMI M18 — Format for Silicon Wafer Specification
Form for Order Entry
SEMI M24 — Specification for Polished
Monocrystalline Silicon Premium Wafers
3.2 ASTM Standards
1
F1241 — Standard Terminology of Silicon Technology
3.3 Other Standards
A comprehensive list of applicable standard test
methods from a variety of sources is given in Table 1 of
SEMI M18.
NOTICE: Unless otherwise indicated, all documents
cited shall be the latest published versions.
4 Terminology
4.1 Definitions of terms related to silicon wafer
technology are given in ASTM Terminology F1241.
4.2 Definitions for some additional relevant terms are
given in SEMI M1.
4.3 The following definitions apply in the context of
this specification:
4.4 Definitions
4.4.1 mechanical test wafer — silicon wafer suitable
for testing equipment with emphasis on dimensional
and structural characteristics only.
4.4.2 process test wafer — silicon wafer suitable for
process monitoring as well as some processing
applications in semiconductor manufacturing. Also
called monitor wafer.
4.4.3 virgin test wafer — test wafer that has not been
used previously in semiconductor manufacturing.
1 American Society for Testing and Materials, 100 Barr Harbor
Drive, West Conshohocken, Pennsylvania 19428-2959, USA.
Telephone: 610.832.9585, Fax: 610.832.9555 Website:
www.astm.org
SEMI M8-0703 © SEMI 1984, 2003 2
5 Ordering Information
5.1 Small Diameter Wafers
5.1.1 Items that may be specified when ordering silicon
wafers are listed in SEMI M18. Not all of these items
are required for ordering small diameter (2 in., 3 in.,
100 mm, and 125 mm) test wafers. The following
items are included in the three specification groups
shown in Table 1; numbers in square brackets following
the item are the item numbers in SEMI M18:
5.1.1.1 Group 1, General and Geometrical — Growth
method [1.1], diameter [6.1], surface orientation [6.9],
thickness [6.7], orientation fiducials (flats and notches)
[6.2–6.5], and edge profile [6.6].
5.1.1.2 Group 2, Surface Characteristics — Surface
defects as listed in Tables 3 and 4 [7.1–7.2, 8.1–8.16].
5.1.1.3 Group 3, Basic Intrinsic Properties —
Conductivity type [1.3], dopant [1.4], and resistivity
[2.1].
Table 1 Classifications for Small Diameter Wafers
Classification Applicable Specification Groups
A 1, 2, 3
B 1, 2
C 1
5.1.2 Not all of the above items must be specified
explicitly; the specifications for many of the items are
determined by the combination of wafer classification
and nominal diameter. In all cases, the following must
be specified on the purchase order for all classes of
small diameter test wafers:
5.1.2.1 Wafer Classification (A, B or C),
5.1.2.2 Nominal diameter and surface orientation,
5.1.2.3 Growth method (see Section 7.1),
5.1.2.4 Lot acceptance procedures (see Section 9.1),
5.1.2.5 Certification (if required) (see Section 12),
5.1.2.6 Packing and Marking (see Section 13),
5.1.2.7 Any options listed in the table, and
5.1.2.8 Appropriate test methods when more than one
is listed for the parameter in Table 1 of SEMI M18.
5.1.3 For Class A and B test wafers, that require
controlled surface characteristics, certain surface defect
limits (see Section 11), must be specified in addition to
the items listed in Section 5.1.2, see Table 3, Sections
8.1–8.16.
5.1.4 For Class A wafers, the following must be
specified in addition to the items listed in Sections 5.1.2
and 5.1.3 (see Section 8.1):
5.1.4.1 Conductivity type
5.1.4.2 Resistivity
5.2 Large Diameter Wafers
5.2.1 Items that may be specified when ordering silicon
wafers are listed in SEMI M18. Not all of these items
are required for ordering large diameter (150, 200, and
300 mm) test wafers. The following items are included
in the two specification groups shown in Table 2;
numbers in square brackets following the item are the
item numbers in SEMI M18.
Table 2 Wafer Classifications for Large Diameter
Wafers
Classifications Applicable Specification Groups
Mechanical 1
Process 1, 2
5.2.1.1 Group 1, General and Geometrical ― Growth
method [1.1], diameter [6.1], surface orientation [6.9],
thickness [6.7], orientation fiducials (flats and notches)
[6.2–6.5], and edge profile [6.6].
5.2.1.2 Group 2, Surface and Intrinsic Properties ―
Surface defects as listed in Table 3 [7.1–7.2, 8.1–8.16],
conductivity type [1.3], dopant [1.4], and resistivity
[2.1].
5.2.2 Not all the specifications must be specified
explicitly; the specifications for many of the items are
determined by wafer classification and nominal
diameter. In all cases the following must be specified
on the purchase order for all classes of large diameter
test wafers:
5.2.2.1 Wafer Classification (Mechanical or Process),
5.2.2.2 Nominal diameter and surface orientation,
5.2.2.3 Growth method (see Section 7.1),
5.2.2.4 Lot acceptance procedures (see Section 9.1),
5.2.2.5 Certification (if required) (see Section 12),
5.2.2.6 Packing and Marking (see Section 13),
5.2.2.7 Any options listed in the table, and
5.2.2.8 Appropriate test methods when more than one
is listed for the parameter in Table 1 of SEMI M18.
6 Dimensions and Permissible Variations
6.1 The material shall conform to the parameters as
specified in Table 3, 4, or 5.
SEMI M8-0703 © SEMI 1984, 2003 3
6.2 If test wafers are specified to be edge contoured,
the profile shall conform to the requirements in Section
5.2 of SEMI M1 and to the dimension C
y
in the
associated polished silicon wafer standard applicable to
the same nominal diameter and thickness. If edge
profiling is not specified explicitly, there is no
specification for the geometrical dimensions of any
profiles that may exist on the wafers.
6.3 The material shall conform to the crystallographic
orientation details as listed in the tables.
7 Materials and Manufacture
7.1 The material shall consist of wafers from crystals
grown by the process specified in the purchase order or
contract.
8 Electrical Requirements
8.1 Class A test wafers and process test wafers (only)
shall conform to the details specified in the purchase
order or contract, as follows:
8.1.1 Conductivity type
8.1.2 Resistivity
9 Sampling
9.1 Unless otherwise specified, ASTM Practice E 122
shall be used. When so specified, appropriate sample
sizes shall be selected from each lot in accordance with
ANSI/ASQC Z1.4. Each quality characteristic shall be
assigned an acceptable quality level (AQL) and lot total
percent defective (LTPD) value in accordance with
ANSI/ASQC Z1.4 definitions for critical, major, and
minor classifications. If desired and so specified in the
contract or order, each of these classifications may
alternatively be assigned cumulative AQL and LTPD
values. Inspection levels shall be agreed upon between
the supplier and the purchaser.
10 Test Methods
NOTE 1: Silicon wafers are extremely fragile. While the
mechanical dimensions of a wafer can be measured by use of
tools such as micrometer calipers and other conventional
techniques, the wafer may be damaged physically in ways that
are not immediately evident. Special care must therefore be
used in the selection and execution of measurement methods.
NOTE 2: The crystal growth method (for example,
Czochralski or Float Zone) and dopant (for example, boron,
phosphorous or antimony) used are difficult to ascertain in
finished wafers. Verification test procedures for certification
of these characteristics shall be agreed upon between the
supplier and the purchaser.
10.1 Use test methods for the specified quantities as
listed in Table 1 of SEMI M18.
11 Surface Defect Criteria
11.1 Minimal Conditions or Dimensions — The
minimal conditions or dimensions for defects stated
below shall be used for determining wafer acceptability.
Anomalies smaller than these limits shall not be
considered defects.
11.2 area contamination — any foreign matter on the
surface in localized areas which is revealed under the
inspection lighting conditions as discolored, mottled, or
cloudy appearance resulting from smudges, stains,
water spots, etc.
11.3 crack — any anomaly conforming to the
definition and greater than 0.25 mm (0.010 inch) in
total length.
11.4 crow's foot — any anomaly conforming to the
definition and greater than 0.25 mm (0.010 inch) in
total length.
11.5 dimple — any smooth surface depression greater
than 3 mm in diameter.
11.6 edge chip and indent — any edge anomaly
including saw exit marks conforming to the definition
and greater than 0.25 mm (0.010 inch) in radial depth
and peripheral length.
11.7 hand scribe mark — any mark such as that caused
by a diamond scribe that is visible under diffuse
illumination.
11.8 haze — haze is indicated when the image of a
narrow beam tungsten lamp filament is detectable on
the polished wafer surface. (Under some conditions
contamination may appear as haze.)
11.9 orange peel — any roughened surface conforming
to the definition that is observable under diffuse
illumination.
11.10 particulate contamination — distinct particles
resting on the surface, which is revealed under,
collimated light as bright points.
11.11 pit — any individually distinguishable non-
removable surface anomaly conforming to the
definition and visible when viewed under high intensity
illumination.
11.12 saw marks — any surface irregularities
conforming to the definition that is observable under
diffuse illumination.
11.13 scratch — any anomaly conforming to the
definition and having a length-to-width ratio greater
than 5:1.
11.14 slip — any pattern of short ridges aligned along
<110> directions and visible under diffuse illumination.