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SEMI M11-0704 © SEMI 1988, 2004 23 CUSTOMER: PART NUMBER: REVISION: DATE: TESTING LEVEL WAFER TEST PIECE M18 ITEM # SPECIFICATION 100 % SAMPLE 100 % SAMPLE 11.7 Thickness (Center) target by agreement wi thin 2–5 µ m rang…

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SEMI M11-0704 © SEMI 1988, 2004 22
CUSTOMER: PART NUMBER: REVISION: DATE:
TESTING LEVEL
WAFER TEST PIECE
M18 ITEM # SPECIFICATION
100% SAMPLE 100% SAMPLE
7.1 Surface Metals
" 1 × 10
11
atoms per cm
2
for each element:
Na, Al, Cr, K, Fe, Ni, Cu, Zn
14. BACK SURFACE CHARACTERISTICS
14.1 Contamination none per SEMI MF523, Section 12.4
14.2 Back Seal Silicon Oxide [ ], None [ ]
15. OTHER CHARACTERISTICS: POLISHED WAFER, EPITAXIAL - SUBSTRATE - MUST MEET SEMI M1 EXCEPT
AS NOTED
2.1 Resistivity 0.005–0.010 #·cm or 0.010–0.020 #·cm
Substrate Resistivity Backseal
Required
0.005–0.010 #·cm yes
0.010–0.020 #·cm user specified
TBD Bulk Micro Defects user-specified
TBD Denuded Zone user-specified
6.1 Nominal Diameter 200 mm only
6.3 Primary Flat/Notch Notch Only
TBD Extrinsic Getter user-specified
5.1 Laser Mark Identification SEMI M13
3.1 Oxygen Concentration " 1.5 × 10
18
atoms/cm
3
(per in-process
monitoring only) correlated to SEMI
MF121-79 equivalent
TBD Inspection Sheet Certificate required in a standard format to
be determined
NOTE 1: TBD - Number to be determined by M18 Task Force, which will also develop EDI coding.
Table 6 Guide for the Specification of 0.25 Micron Design Rule, Twin-Tub CMOS, Epitaxial Wafers
CUSTOMER: PART NUMBER: REVISION: DATE:
TESTING LEVEL
WAFER TEST PIECE
M18 ITEM # SPECIFICATION
100% SAMPLE 100% SAMPLE
11. GENERAL EPITAXIAL WAFER AND LAYER CHARACTERISTICS
11.1 Conductivity Type/
Structure
p/p+
11.2 Primary Dopant Boron
11.3 Silicon Source Gas fixed by agreement
11.4 Reactor Type fixed by agreement
Net Carrier Density
(Center)
2.00 × 10
15
target
± 25% (2σ) tolerance
1.34 × 10
15
minimum
Units carriers per cm
3
11.5
Test Method Mercury Probe SEMI MF1392 or SEMI MF1393
11.6 Net Carrier
DensityVariation
10% maximum per SEMI M11
SEMI M11-0704 © SEMI 1988, 2004 23
CUSTOMER: PART NUMBER: REVISION: DATE:
TESTING LEVEL
WAFER TEST PIECE
M18 ITEM # SPECIFICATION
100% SAMPLE 100% SAMPLE
11.7 Thickness (Center)
target by agreement within 2–5 µm range ± 5% (1σ)
tolerance
11.8 Thickness Variation 10% per SEMI M11
11.11 Phantom Layer none
12. MECHANICAL CHARACTERISTICS: POST EPI
12.5 Flatness/Site
" 0.25 um (SFQR), site size 22 mm × 22 mm including partial
sites, PUA to be negotiated (See NOTE 1.)
13. FRONT SURFACE CHARACTERISTICS
13.1 Stacking Faults 0.03/cm
2
maximum (See NOTE 2.)
13.2 Slip/Dislocations none per SEMI MF1726, slip with a depth < 0.1 µm acceptable
13.5 Scratches none per SEMI MF523, Section 12.2
13.6 Dimples none per SEMI MF523, Section 12.3
13.7 Orange Peel none per SEMI MF523, Section 12.3
13.8 Cracks/Fractures none per SEMI MF523, Section 12.3
13.9 Crow’s Feet none per SEMI MF523, Section 12.3
13.10 Edge Chips none per SEMI MF523, Section 12.3
13.12 Haze none per SEMI MF523, Section 12.2
13.13 Foreign Matter none per SEMI MF523, Section 12.3
0.36 per cm
2
maximum ! 0.16 µm LSE
(See NOTE 3.)
TBD Localized Light
Scatterers
calibrate using SEMI M53
13.15 Nominal Edge
Exclusion
4 mm for all front surface characteristics except
cracks/fractures, edge chips, crow’s feet, and foreign matter.
" 5 × 10
10
atoms per cm
2
for each of the following elements:
Ca, Cr, Co, Cu, Fe, K, Mn, Mo, Na, Ni, Ti.
7.1 Surface Metals
" 1 × 10
11
atoms per cm
2
for each of the following elements:
Al, V, Zn.
14. BACK SURFACE CHARACTERISTICS
14.1 Contamination none per SEMI MF523, Section 13.4
TBD Back Seal user specified
15. OTHER CHARACTERISTICS: POLISHED WAFER-EPITAXIAL SUBSTRATE – MUST MEET SEMI M1 (except when
noted)
2.1 Resistivity
0.005–0.010 Ω·cm [ ], 0.010–0.020 Ω·cm [ ]
TBD Bulk Micro Defects by agreement
TBD Denuded Zone by agreement
TBD Back Seal polysilicon [ ], silicon oxide [ ], combinations and thickness by
agreement, none [ ]
6.1 Diameter 125 mm [ ], 150 mm [ ], 200 mm [ ], 300 mm [ ]
NOTE 1: Based on 1997 process capability. PUA is estimated to be 90%.
NOTE 2: Based on 1997 process capability.
NOTE 3: This requirement is mathematically consistent with the SIA Roadmap value of 0.6 per cm
2
maximum ! 0.12 µm LSE. The SIA
Roadmap value was transformed using draft international standard ISO/DIS 14644-1 which follows the equation: 0.36 per cm
2
= 0.60 per cm
2
/(0.16 µm /0.125 µm)
2.1
.
NOTE 4: TBD — Number to be determined by M-18 Task Force which will also develop EDI coding.
SEMI M11-0704 © SEMI 1988, 2004 24
Table 7 Guide For The Specification Of 0.18 Micron Design Rule
ITEM
p/p
-
EPITAXIAL
CIRCUIT WAFER
(DRAM)
p/p
+
EPITAXIAL
CIRCUIT WAFER
(Logic/DRAM)
p/p
++
EPIAXIAL
CIRCUIT WAFER
(Logic)
1.0 GENERAL CHARACTERISTICS
1.1 Growth Method Cz or MCz * Cz or MCz * Cz or MCz *
1.2 Crystal Orientation/Tolerance
{100} ± 1° {100} ± 1° {100} ± 1°
1.3 Conductivity Type
p/p
-
p/p
+
p/p
++
1.4 Dopant Boron Boron Boron
1.5 Nominal Edge Exclusion 3 mm 3 mm 3 mm
2.0 ELECTRICAL CHARACTERISTICS
2.1.1 Resistivity (Center Point)
0.8–15 Ω·cm*
(match epi layer)
0.01–0.02 Ω·cm* 0.005–0.010 Ω·cm*
2.1.2 Resistivity (Tolerance) (see row 2.1.1) (see row 2.1.1) (see row 2.1.1)
2.2 Radial Resistivity Variation (RRG) < 20% * < 20% * < 20% *
2.3 Resistivity Striations NS * (See Note 2.) NS * (See Note 2.) NS * (See Note 2.)
2.4 Minority Carrier Recombination Lifetime NS * (See Note 2.) NS * (See Note 2.) NS * (See Note 2.)
3.0 CHEMICAL CHARACTERISTICS
3.1.1 Oxygen Concentration (Nominal) user/supplier user/supplier user/supplier
3.1.2 Oxygen Concentration (Tolerance: within
shipment variation)
± 1.5 ppma * ± 2.0 ppma *
(See Note 3.)
± 2.0 ppma *
(See Note 3.)
3.2 Radial Oxygen Variation " 10% *
10 mm from Edge
" 10% *
10 mm from Edge
" 10% *
10 mm from Edge
3.3 Carbon Concentration " 0.5 ppma * See Note 3 See Note 3
4.0 STRUCTURAL CHARACTERISTICS
4.1 Dislocation Etch Pit Density NS (See Note 2.) NS (See Note 2.) NS (See Note 2.)
4.2 Slip none none none
4.3 Lineage none none none
4.4 Twin none none none
4.5 Swirl none none none
4.6 Shallow Pits none none none
4.7 Oxidation-Induced Stacking Faults (OSF) NS * (See Note 2.) NS * (See Note 2.) NS * (See Note 2.)
4.8
Oxide Precipitates (BMD) O
i
Reduction (∆O
i
)
user/supplier user/supplier user/supplier
5.0 WAFER PREPARATION CHARACTERISTICS
5.1 Wafer ID Marking Per SEMI M1 Per SEMI M1 Per SEMI M1
5.2 Front Surface Thin Film(s)
5.3 Denuded Zone user/supplier user/supplier user/supplier
5.4 Extrinsic Gettering Treatment user/supplier user/supplier user/supplier
5.5 Backseal none None or as user/
supplier agreement
None or as user/
supplier agreement
5.6 Annealing None or as user/
supplier agreement
None or as user/
supplier agreement
None or as user/
supplier agreement
6.0 MECHANICAL CHARACTERISTICS
6.1 Diameter
300 ± 0.2 mm
or
200 ± 0.2 mm
300 ± 0.2 mm
or
200 ± 0.2 mm
300 ± 0.2 mm
or
200 ± 0.2 mm
6.2 Diameter Notch Dimensions Per SEMI M1 Per SEMI M1 Per SEMI M1
6.2.1 Notch Depth 1 + 0.25,
-0.00 mm
1 + 0.25,
-0.00 mm
1 + 0.25,
-0.00 mm