semi合集-English.pdf - 第4975页
SEMI M11-0704 © SEMI 1988, 2004 32 ITEM (See Note 1) p/p − EPITAXIAL WAFER p/p + EPITAXIAL WAFER p/p ++ EPITAXIAL WAFER 4.4 Twin 4.5 Swirl 4.6 Shallow pits 4.7 Oxidation-Induced Stacking Faults (OSF) 5.0 WAFER PREPARATIO…
SEMI M11-0704 © SEMI 1988, 2004 31
NOTE 1: * indicates substrate specification.
NOTE 2: NS is the abbreviation for Not Specified.
NOTE 3: Non-destructive metrology did not exist at the time this document was approved.
NOTE 4: The site size is 25 mm × 32 mm. Partial sites are included. The metrology was being developed at the time this document was being
balloted.
NOTE 5: These values are mathematically consistent. The 0.09 µm count limit was transformed using draft international standard: ISO 14644-1
which follows the equation: 112 counts per wafer
= 200 counts per wafer
/(0.12 µm /0.09 µm)
2
.
NOTE 6: The process control capability is expected to be: " 500 @ ! 0.25 µm.
NOTE 7: Large Area Defects (LAD’s) are surface imperfections or particles that have geometry with at least one side or diameter that is a
minimum of 1 micron in length .
NOTE 8: Tested per SEMI MF1726; a depth < 100 nm is acceptable.
NOTE 9: Only process control data is required. Data not required on Certificate of Compliance.
NOTE 10: The first column under item references SEMI M18. M18 was in the process of substantial revision at the time this documented was
balloted. Many M18 line references remain to be determined. TBD is the abbreviation for “to be determined”.
NOTE 11: The intent in specifying carrier density using a range, rather than the center nominal with tolerance accompanied by a wafer variation
limit, is to minimize the importance of edge variations and to emphasize meeting the range of carrier density as it is allowed by the process and
the designers.
Table 10 Guide for the Specification of 90 nm
Design Rule Silicon Epitaxial Wafers with DSP Substrates
ITEM (See Note 1)
p/p
−
EPITAXIAL
WAFER
p/p
+
EPITAXIAL
WAFER
p/p
++
EPITAXIAL
WAFER
1.0
SUBSTRATE GENERAL CHARACTERISTICS (See Note
１)
1.1 Growth Method Cz or MCz
1.2
Crystal Orientation {100}
1.3
Crystal Orientation/Tolerance ±1°
1.4
Substrate Conductivity Type
p
−
p
+
p
++
1.5 Dopant Boron
1.6 Nominal Edge Exclusion (Note 2) 2 mm (300 mm) or 3 mm (200 mm)
2.0
SUBSTRATE ELECTRICAL CHARACTERISTICS
2.1
Substrate Resistivity (Center Point)
0.8−15 Ω·cm 0.01−0.02 Ω·cm
0.005−0.010 Ω·cm
2.2
Substrate Radial Resistivity Variation
(See Note 3.)
≤ 20%
3.0
CHEMICAL CHARACTERISTICS
3.1 Oxygen Concentration (Center)
supplier-purchaser
agreement
(See Notes 4 & 5)
supplier-purchaser agreement (See Notes 4 &
6)
supplier-purchaser
TBD Oxygen Concentration Tolerance (Center)
supplier-purchaser agreement
3.2 Radial Oxygen Variation
supplier-purchaser agreement
10 mm from Edge (See Note 7)
3.3 Carbon Concentration
" 0.5 ppma
（Background,
See Notes 3 & 4）
" 0.5 ppma
（Background, See Notes 3, 4 & 8）
4.0
STRUCTURAL CHARACTERISTICS
4.1 Dislocation Etch Pit Density
4.2 Slip
4.3 Lineage
supplier-purchaser agreement
SEMI M11-0704 © SEMI 1988, 2004 32
ITEM (See Note 1)
p/p
−
EPITAXIAL
WAFER
p/p
+
EPITAXIAL
WAFER
p/p
++
EPITAXIAL
WAFER
4.4 Twin
4.5 Swirl
4.6 Shallow pits
4.7 Oxidation-Induced Stacking Faults (OSF)
5.0
WAFER PREPARATION CHARACTERISTICS
5.1 Wafer ID Marking per SEMI M1
5.4 Extrinsic Gettering Treatment
5.5 Backseal
5.6 Annealing
supplier-purchaser agreement
6.0 SUBSTRATE MECHANICAL CHARACTERISTICS (Per SEMI M1 Unless Otherwise Specified)
6.1 Diameter 300 or 200
6.2 Notch Dimensions per SEMI M1
6.3 Notch Orientation <110> ± 1°
6.61 Edge Profile per SEMI M1
6.6.2 Edge Surface Finish Polished
6.7 Substrate Thickness
775 ± 20 µm [300 mm diameter]
or
725 ± 20 µm [200 mm diameter]
6.8 Thickness Variation (GBIR)
≤ 3 µm
6.9 Surface Orientation and Tolerance (100) ± (0.2 – 1)°
EPITAXIAL WAFER
（Epitaxial Layer and Substrate）
11.0
EPITAXIAL LAYER CHARACTERISTICS
11.1 Conductivity Type
p/p
−
p/p
+
p/p
++
11.2 Primary Dopant Boron
11.3 Silicon Source Gas
11.4 Epi Growth Method
11.5
Carrier Density Range - Must be met at all
points on the wafer surface inside the edge
exclusion (See Note 13)
supplier-purchaser agreement
11.6 Net Carrier Density Variation
≤ 15%
11.7
Layer Thickness (Target Value at Wafer
Center and Tolerance)
Target: supplier-purchaser agreement
11.8
Thickness Variation (within wafer, per SEMI
M11, Section 6.3)
≤ 10%
11.9 Flat Zone supplier-purchaser agreement
11.10 Transition Width supplier-purchaser agreement
12.0
MECHANICAL CHARACTERISTICS
12.1 Bow supplier-purchaser agreement
12.2 Warp
≤ 50 µm (See Note 3)
12.3 Sori supplier-purchaser agreement
12.4a Total Thickness Variation (GBIR or TTV, see
NOTE 9.)
≤ 4 µm
SEMI M11-0704 © SEMI 1988, 2004 33
ITEM (See Note 1)
p/p
−
EPITAXIAL
WAFER
p/p
+
EPITAXIAL
WAFER
p/p
++
EPITAXIAL
WAFER
12.4b
Global Flatness (GFLR or TIR)
≤ 3 µm
12.5 Flatness/Site (See Note 10)
SFQR ≤ 90 nm
Site Size 26 mm x 8 mm
Percent Usable Area ≥ 95%
Partial Sites Included
Or
Percent Usable Area 100%
Full Sites Only
X-offset = 0 and Y-offset = 0
12.7
Nanotopography for each analysis area at a
specified percentage defective
(See SEMI M43)
supplier-purchaser agreement
12.8 Misfit Dislocations supplier-purchaser agreement
13.0
FRONT SURFACE CHARACTERISTICS
13.2 Slip (Note 15)
TBD Dislocation Density
TBD Contamination/Area
TBD Edge Cracks
13.5a Scratches – macro
13.5b Scratches – micro
13.6 Dimples
13.7 Orange Peel
13.8 Cracks/Fractures
13.9 Crow’s Feet
13.10 Edge Chips
13.11 Edge Crown
13.12 Haze
13.13 Foreign Matter
TBD Saw Marks
TBD Dopant Striation Rings
TBD Stains
none
13.14
Localized Light Scatters (LLS)
(300 mm diameter, scale for 200 mm)
Size ≥ 90 nm Count ≤ 238 (Note 11, 16, 17)
Size ≥ 300 nm Count ≤10 (Note 17)
Size ≥ 2,000 nm Count ≤ 5 (See Note 14)
TDB
Surface Metal Contamination (See Note 3)
TDB Sodium
≤ 1 × 10
10
/cm
2
TDB Aluminum
≤ 1 × 10
10
/cm
2
TDB Potassium
≤ 1 × 10
10
/cm
2
TDB Chromium
≤ 1 × 10
10
/cm
2
TDB Iron
≤ 1 × 10
10
/cm
2
TDB Nickel
≤ 1 × 10
10
/cm
2
TDB Copper
≤ 1 × 10
10
/cm
2
TDB Zinc
≤ 1 × 10
10
/cm
2