semi合集-English.pdf - 第5041页

SEMI M18-0704 © SEMI 1990, 2004 27 ITEM VALUE STANDARD REFERENCE A STANDARD TEST METHODS IS IN M47 IS REQ'D B SEMI M47 JEITA SEMI JIS JEITA DIN 26.2 BOX Thickness Variation YES YES Table 1 26.3 Bonded Interface Loca…

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SEMI M18-0704 © SEMI 1990, 2004 26
SOI Wafer
ITEM VALUE
STANDARD
REFERENCE
A
STANDARD TEST METHODS
IS IN
M47
IS
REQ'D
B
SEMI M47 JEITA SEMI JIS JEITA DIN
25 SOI LAYER CHARACTERISTICS
25.0 Type of SOI YES YES Table 1
25.1 Starting silicon wafer for SOI YES NO Table 1
25.2 Surface Silicon Thickness YES YES Table 1
25.3 Surface Silicon Thickness Mean
Value Variation
YES NO Table 1
25.4 Surface Silicon Thickness Variation
in Wafer
YES YES Table 1
25.5 Crystal Orientation YES NO Table 1 SEMI MF26
25.6 Rotation Misalignment YES NO Table 1
25.7 Edge Exclusion,
Nominal
YES NO Table 1
25.8 Non-SOI Edge Area YES NO Table 1
25.9 Conductivity Type YES NO Table 1 SEMI MF42
25.10 Dopant YES NO Table 1
25.11 Dopant Concentration YES NO Table 1
25.12 SOI Etch Pit YES NO Table 1
25.13 Threading Dislocation YES NO Table 1
25.14 HF Defect YES NO Table 1
25.15 Void YES NO Table 1
25.16 Roughness (Si surface)
rms @ 2 × 2 µm
YES NO Table 1 EM-3505
Roughness (Si surface)
rms @ 10 × 10 µm
YES NO Table 1 EM-3505
Roughness (Si surface)
rms @ [ ] × [ ] µm
YES NO Table 1 EM-3505
Roughness (Si surface)
rms @ [ ] × [ ] µm
YES NO Table 1 EM-3505
25.17 Surface Metal Contamination (Fe) YES NO Table 1 SEMI MF1526
Surface Metal Contamination (Cr) YES NO Table 1 SEMI MF1526
Surface Metal Contamination (Ni) YES NO Table 1 SEMI MF1526
Surface Metal Contamination (Cu) YES NO Table 1 SEMI MF1526
Surface Metal Contamination [ ] NO NO SEMI MF1526
Surface Metal Contamination [ ] NO NO SEMI MF1526
Surface Metal Contamination [ ] NO NO SEMI MF1526
Surface Metal Contamination [ ] NO NO SEMI MF1526
Surface Metal Contamination [ ] NO NO SEMI MF1526
Surface Metal Contamination [ ] NO NO SEMI MF1526
26 BOX CHARACTERISTICS
26.1 BOX Thickness YES YES Table 1
SEMI M18-0704 © SEMI 1990, 2004 27
ITEM VALUE
STANDARD
REFERENCE
A
STANDARD TEST METHODS
IS IN
M47
IS
REQ'D
B
SEMI M47 JEITA SEMI JIS JEITA DIN
26.2 BOX Thickness Variation YES YES Table 1
26.3 Bonded Interface Location YES NO Table 1
26.4 BOX Pinholes YES NO Table 1
26.5 Dielectric Breakdown YES NO Table 1
27 MECHANICAL CHARACTERISTICS
27.1 Warp YES NO M1 Sec 9 SEMI MF1390
27.2 Flatness-site YES NO M1 Sec 9
28 FRONT SURFACE INSPECTION CHARACTERISTICS
28.1 Scratch YES NO M1 Table 1 SEMI MF523
28.2 Haze YES NO M1 Table 1 SEMI MF523
28.3 LLS
@ particle size
YES NO M1 Table 1
M35
28.4 Slip YES NO SEMI MF523
28.5 Edge Chip YES NO M1 Table 1 SEMI MF523
28.6 Edge Crack YES NO M1 Table 1 SEMI MF523
28.7 Foreign Matter YES NO M35 SEMI MF523
29 BACK SURFACE CHARACTERISTICS
29.1 Backside Metal Contamination (Fe) YES NO Table 1
Backside Metal Contamination (Cr) YES NO Table 1
Backside Metal Contamination (Ni) YES NO Table 1
Backside Metal Contamination (Cu) YES NO Table 1
Backside Metal Contamination [ ] NO NO
Backside Metal Contamination [ ] NO NO
Backside Metal Contamination [ ] NO NO
Backside Metal Contamination [ ] NO NO
Backside Metal Contamination [ ] NO NO
Backside Metal Contamination [ ] NO NO
A
Item is defined or described and/or a test procedure applicable to the item is included in the cited reference.
B
Value is/is not required to minimally specify a wafer.
C
Individual value is not required if wafer is specified according to SEMI M1.
D
In today's technology, it may be possible to inspect for some of these items using automated laser scanning systems; however, a standard test
procedure has yet to be developed. Application of automated inspection must be agreed upon between supplier and user.
Table 2 EDI Code List
Line Item EDI Code ID Sub Param ID
1.1 Growth Method 100001
1.2 Crystal Orientation 100002
1.3 Conductivity Type 100003
1.4 Dopant 100004
1.5 Nominal Edge Exclusion Distance for Fixed Quality Area 100005
2.1 Resistivity 100006
SEMI M18-0704 © SEMI 1990, 2004 28
Line Item EDI Code ID Sub Param ID
2.2 Radial Resistivity Variation (RRG) 100007
2.3 Resistivity Striations 100008
2.4 Minority Carrier Lifetime 100009
3.1 Oxygen Concentration 100010
3.2 Radial Oxygen Variation 100011
3.3 Carbon Concentration 100012
3.4 Boron Concentration in Heavily Doped n-type Si 100013
4.1 Dislocation Etch Pit Density 100014
4.2 Slip 100015
4.3 Lineage 100016
4.4 Twin 100017
4.5 Swirl 100018
4.6 Shallow Pits 100019
4.7 Oxidation Induced Stacking Faults (OSF) 100020
4.8 Oxide Precipitates (BMD) 100021
5.1 Wafer ID Marking 100022
5.2 Front Surface Thin Film(s) Appl 100023
5.3 Denuded Zone 100024
5.4 Extrinsic Gettering Treatment 100025
5.5 Backseal 100026
5.6 Annealing 100027
6.01 Dimensions Specified According to SEMI M1.xx 100028
6.1 Diameter 100029
6.2 Primary Flat Length/Diameter Notch Dimensions 100030
6.3 Primary Flat/Notch Orientation 100031
6.4 Secondary Flat Length 100032
6.5 Secondary Flat Location 100033
6.6 Edge Profile 100034
6.7 Thickness 100035
6.8 Thickness Variation (TTV) 100036
6.9 Surface Orientation 100037
6.10 Bow 100038
6.11 Warp Method 100039 SEMI MF657
6.11 Warp Method 100040 SEMI MF1390
6.12 Sori 100041
6.13 Flatness/Global 100042
6.14 Flatness/Site 100043 SF3R
6.14 Flatness/Site 100044 SF3D
6.14 Flatness/Site 100045 SFLR
6.14 Flatness/Site 100046 SFLD
6.14 Flatness/Site 100047 SFQR
6.14 Flatness/Site 100048 SFQD
6.14 Flatness/Site 100049 SBIR
6.14 Flatness/Site 100050 SBID
7.1 Surface Metal Contamination -- Sodium 100051
7.1 Surface Metal Contamination -- Aluminum 100052