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SEMI M23.6-0703 © SEMI 2003 2 _ (111) P _ (111) P _ (011) _ (001) (010) (110) (101) (001) (011) _ (110) _ _ (111) In (111) In _ (011) _ (101) (100) _ _ (011) Etch Pit _ (010) Cross Sect ion of Etch Figure on Front Face o…

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SEMI M23.6-0703 © SEMI 2003 1
SEMI M23.6-0703
SPECIFICATION FOR ROUND 150 mm POLISHED
MONOCRYSTALLINE INDIUM PHOSPHIDE WAFERS (NOTCHED)
This specification was technically approved by the Global Compound Semiconductor Materials Committee
and is the direct responsibility of the Japanese Compound Semiconductor Materials Committee. Current
edition approved by the Japanese Regional Standards Committee on April 28, 2003. Initially available at
www.semi.org June 2003; to be published July 2003.
1 Purpose
1.1 This specification defines properties of 150 mm
monocrystalline InP substrates, in agreement with
presently established industry practice. It uniquely
defines those mechanical parameters that do not need,
for technical reasons, a choice of different values.
2 Scope
2.1 The parameters defined include the values and
tolerances of wafer diameter, thickness and surface
orientation. The position and depth of the notch and
laser marking are also specified.
2.2 The complete specification of this product includes
the requirements of SEMI M23, excluding those that
are not relevant to this specification (e.g., flat
positions).
NOTICE: This standard does not purport to address
safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine
the applicability of regulatory or other limitations prior
to use.
3 Referenced Standards
3.1 SEMI Standards
SEMI M12 — Specification for Serial Alphanumeric
Marking of the Front Surface of Wafers
NOTICE: Unless otherwise indicated, all documents
cited shall be the latest published versions.
4 Terminology
None.
5 Physical Requirements
Table 1 Physical Requirements
Property Specification Tolerance Unit Reference
WAFER
Diameter 150.0
± 0.5
mm
Thickness, center point 675 ± 25 µ m
Surface orientation A (100) 0.5 max. degrees Figure 2
Surface orientation B
Tilt 2 off (100) towards (110) ± 0.5 degrees Figure 3
Orthogonal misorientation 0 ± 5 max. degrees Figure 4
NOTCH
Orientation [010] ± 2 degrees Figure 1
Depth 1.00 + 0.25, -0.00 mm Figure 5
Opening angle 90 + 5, -1 degrees Figure 5
LASER MARKING
Surface front side
Position adjacent to notch Figure 6
Mandatory content check characters SEMI M12
SEMI M23.6-0703 © SEMI 2003 2
_
(111)
P
_
(111)
P
_
(011)
_
(001)
(010)
(110)
(101)
(001)
(011)
_
(110)
_ _
(111)
In
(111)
In
_
(011)
_
(101)
(100)
_ _
(011)
Etch Pit
_
(010)
Cross Section of Etch Figure
on Front Face of Wafer
Figure 1
Diagram Shows a InP Wafer with Notch
SEMI M23.6-0703 © SEMI 2003 3
(111) In
Vector Normal
to Wafer Surface
(100)
Vector Normal
to (100) plane
_
(101)
_
(001)
_
(011)
(010)
_
_
(111)
In
(110)
_
(111)
P
Tolerance
Figure 2
Notched InP Wafer Illustrating Surface Orientation A