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SEMI M30-0997 © SE MI 1997 1 SEMI M30-0997 STANDARD TEST METHOD FOR SUBSTITUTIONAL ATOMIC CARBON CONCENTRATION IN Ga A s BY FOURIER TR ANSFORM INFRARED ABSORPTION SPECTROSCOPY 1 Purpose The purpose o f this document is t…

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Figure A1-2
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Standardized Dimension
Location
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T31 120 max ←
T32 100 max ←
T33 10 min ←
T34 120 max ←
T35 60 max ←
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SEMI M30-0997 © SEMI 19971
SEMI M30-0997
STANDARD TEST METHOD FOR SUBSTITUTIONAL ATOMIC CARBON
CONCENTRATION IN GaAs BY FOURIER TRANSFORM INFRARED
ABSORPTION SPECTROSCOPY
1 Purpose
The purpose of this document is to test substitutional
atomic carbon concentration in GaAs by Fourier
Transform Infrared Absorption Spectroscopy (FT-IR).
2 Scope
2.1 This referee test method cover s the determination
of substitutional carbon concentration in single crystal
GaAs.
2.2 The useful range of carbon con centration
measurable at room temperature by this test method is
from the maximum amount of substitutional carbon
soluble in GaAs to 1 × 10
15
cm
-3
. The detection limit
depends on the equipment and measurement conditions.
It is expected that many users of this test method can
reduce the detection limit to 10
14
cm
-3
level. 77K
measurement is effective to reduce the detection limit.
In the case of 77K measurement, the upper limit is 1.3
× 10
16
cm
-3
, as described in the following article:
T.Arai et al : J. Electronic Industry, Vol. 30, 9
(1988) 38
2.3 The test method utilizes the relationship between
carbon concentration and absorption coefficient at 580
cm
-1
for room temperature measurement (around 582
cm
-1
for 77K measurement), the infrared absorption
band is associated with substitutional carbon in GaAs.
These specific absorption bands in GaAs have been
associated with the local vibration mode of C
as
.
2.4 The method is applicable to Se mi-Insulating (SI)
GaAs. Slices can be any crystallographic orientation
and should be polished or lapped and etched on both
surfaces.
2.5 This test method is intended to be used with FT-IR
spectrometers that are equipped to operate in the region
including the wave number range from 700 to 500 cm
-1
.
2.6 This standard may involve haz ardous materials,
operation, and equipment. This standard does not
purport to address all of the safety problems associated
with its use. It is the responsibility of the user of this
standard to establish appropriate safety and health
practices and determine the applicability of regulatory
limitations prior to use.
3 Referenced Documents
3.1 ASTM Standards
1
E 131 — Definitions of Terms and Symbols Relating to
Molecular Spectroscopy
E 168 — Recommended Practices for General
Techniques of Infrared Quantitative Analysis
E 177 — Practice for Use of the Terms Precision and
Bias in ASTM Test Methods
F 120 — Practice for Infrared Absorption Analysis of
Impurities in Single Crystal Semiconductor Materials
F 133 (A 894) — Test Method for Thickness and
Thickness Variation of GaAs Slices
3.2 Other Document
2
DIN 50449-1 — Bestimmung des
Verunreinigungsgehaltes in III-V-
Verbindungshalbleitern mittels Infrarotabsorption/Teil
1: Kohlenstoff in Galliumarsenide (Determination of
Impurity Content in Semiconductors by Infrared
Absorption Part 1: Carbon in Gallium Arsenide)
4 Terminology
4.1 Acronyms
4.1.1 CPAA — Charged particle activation analysis
4.1.2 FWHM — Full width at half maximum, the
width of the absorption band at half its magnitude as
measured from the baseline.
4.1.3 MCT — Mercury cadmium tel luride
4.1.4 TGS — Triglycine sulfate
4.2 Many of the terms associated with this test method
can be found in ASTM Definitions E 131.
4.2.1 baseline — A linearly interpol ated pattern over a
limited spectral region of the ratio recording used to
derive an absorption coefficient (see Figure 1 and refer
to ASTM Practice E 168).
1 American Society for Testing and Materials, 100 Barr Harbor
Drive, West Conshohoken, PA 19428-2959
2 Deutches Institut fur Normung, e.v., Beuth Verlag GmbH,
Burggrafstrasse 4-10, D-1000 Berlin 30, Germany
SEMI M30-0997 © SEMI 1997 2
Figure 1
FT-IR Spectrum of C
as
Local Mode Absorption in GaAs