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SEMI M53-1103 © SEMI 2003 7 11.1.2 Date and location of measure ment; 11.1.3 Manufacturer, model, serial number, and software ve rsion of the SSI S; 11.1.4 Reference wafer characteristics as o utlined in the certificates…

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SEMI M53-1103 © SEMI 2003 6
approximately midway between adjacent pairs of the
original set.
8.3 Background Contamination
8.3.1 Handle and store reference wafers with great care
to avoid contamination and damage.
8.3.2 Establish that the bell-shaped peaks in the SSIS
LLS histogram of each reference wafer to be used,
which are generated from the PSL sphere depositions,
are well defined and well above the background level
over all of the response curve except near the threshold.
Also verify that each unimodal bell-shaped curve
extends to less than 50% of its peak value on both sides
of the peak within a diameter range of ± 15% of the
PSL sphere diameter at the peak of the distribution. If
the deposition on any reference wafer fails either of
these criteria, obtain a new reference wafer.
NOTE 3: In most cases, the LLS histogram peaks are wider
than the actual deposition diameter distributions. See Related
Information 1 for more details.
8.4 Data to Accompany Reference Wafers — A
certificate with the following information must
accompany each reference wafer.
8.4.1 For each CRM on the reference wafer provide:
8.4.1.1 The deposition peak diameter and the
uncertainty in accordance with the requirements of Row
3.3 of Table 3 of SEMI M52.
8.4.1.2 The maximum possible value of the deposition
diameter distribution full width at half max (FWHM)
expressed as a percent of peak diameter. (See Related
Information 1.)
8.4.1.3 The particle count of each CRM and the
associated sample coefficient of variation.
8.4.1.4 The approximate location of each CRM on the
reference wafer by the x- and y-coordinates (as
specified in SEMI M20) of the center of the deposition
area or by a map or drawing of the wafer.
8.4.2 Identification of the deposition system used for
the deposition by model and serial number.
8.4.3 The date of production.
8.4.4 Wafer identification by laser mark on 200 mm
and smaller wafers per SEMI M12 or 300 mm wafers
per SEMI M1.15 including alpha numeric message.
8.4.5 Name and address of the reference wafer
manufacturer.
8.4.6 Identification of the deposited PSL spheres by
manufacturer, lot number and model.
9 Procedure
9.1 Set up the SSIS in accordance with the
manufacturer's instructions for the wafer diameter, sizes
of PSL spheres, and other machine conditions to be
used during the calibration procedure. Ensure that
machine conditions are identical with those to be used
in examining wafers with the calibrated SSIS.
9.2 Ensure that the SSIS is operating properly for the
selected machine conditions.
9.3 Load the first reference wafer into the SSIS.
9.4 Scan the wafer.
9.5 Generate a data set file of the distribution of
localized light scatterers as a function of reported SSIS
signal.
9.6 Repeat Sections 9.3 through 9.5 for each of the
depositions on the remaining reference wafers and for
all of the SSIS channels.
10 Interpretation of Data
10.1 Construct a histogram for the data set from each
of the PSL sphere depositions used for the calibration.
10.2 Determine the standard deviation and peak value
from curve fits to the histograms from each deposition.
10.3 Associate each peak value of reported SSIS
signals determined in Section 10.2 to the certified value
of PSL sphere diameter for that CRM deposited on that
reference wafer.
10.4 Create and check the SSIS response curve.
10.4.1 To obtain the SSIS response curve make a fit to
the set of peak values in such a manner that the
response to PSL sphere deposition CRMs that size
between calibration points meets the uncertainty
requirements of SEMI M52.
10.4.2 Check the accuracy of the resulting SSIS
response curve by either measuring PSL sphere
deposition CRMs with locations mid-way between
calibration points, or by comparison to a modeled
result, or both.
10.4.3 If necessary repeat the curve fitting procedure
until the required accuracy is met.
10.5 Use this fitted response curve to establish the LSE
size of localized light scatterers with any particular
machine response value.
11 Report
11.1 Report the following information:
11.1.1 Operator identification;
SEMI M53-1103 © SEMI 2003 7
11.1.2 Date and location of measurement;
11.1.3 Manufacturer, model, serial number, and
software version of the SSIS;
11.1.4 Reference wafer characteristics as outlined in
the certificates accompanying the reference wafers (See
Section 8.4);
11.1.5 Histogram for each data set and the assigned
peak value of the distribution of reported diameters
together with the certified peak diameter of the PSL
sphere distributions used to generate the histogram; and
11.1.6 The curve fitted to the peak values and the
associated certified PSL diameters.
SEMI M53-1103 © SEMI 2003 8
APPENDIX 1
SINGLE-POINT CALIBRATION
NOTICE: The material in this appendix is an official part of SEMI M53 and was approved by full letter ballot
procedures on November 22, 2002.
A1-1.1 Choose a single reference wafer with PSL
sphere deposition CRM size near the LSE size of the
smallest LLS to be tested for in meeting a wafer
specification.
NOTE A1-1: Because of possible non-linearities in the SSIS,
single-point calibration is not recommended except in the
immediate vicinity of a single sphere size of interest, for
example, the smallest size to be tested for in meeting a wafer
specification.
A1-1.2 Set up the SSIS to be calibrated in accordance
with Sections 9.1 and 9.2.
A1-1.3 Load the appropriate reference wafer into the
SSIS.
A1-1.4 Scan the wafer.
A1-1.5 Generate a data set file of the distribution of
localized light scatterers as a function of reported size
(LSE).
A1-1.6 Construct a histogram for the distribution in the
data set file.
A1-1.7 Determine the standard deviation and peak
diameter value from curve fits of the histogram.
A1-1.8 Associate the peak value of reported size (LSE)
found to the certified value of PSL sphere diameter
deposited on the reference wafer.
NOTICE: SEMI makes no warranties or
representations as to the suitability of the standards set
forth herein for any particular application. The
determination of the suitability of the standard is solely
the responsibility of the user. Users are cautioned to
refer to manufacturer's instructions, product labels,
product data sheets, and other relevant literature,
respecting any materials or equipment mentioned
herein. These standards are subject to change without
notice.
By publication of this standard, Semiconductor
Equipment and Materials International (SEMI) takes no
position respecting the validity of any patent rights or
copyrights asserted in connection with any items
mentioned in this standard. Users of this standard are
expressly advised that determination of any such patent
rights or copyrights, and the risk of infringement of
such rights are entirely their own responsibility.