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SEMI M57-0705 © SEMI 2004, 2005 3 NOTICE: Unless otherwise indicated, all documents cited shall be the latest published versions. 4 Terminology 4.1 Most general term s, acronyms, and symbols relating to silicon technolog…

SEMI M57-0705 © SEMI 2004, 2005 2

SEMI MF1239 — Test Methods for Oxygen Precipitation Characteristics of Silicon Wafers by Measurement of

Interstitial Oxygen Reduction

SEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Total Thickness Variation on Silicon

Wafers by Automated Noncontact Scanning

SEMI MF1535 — Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement

of Photoconductivity Decay by Microwave Reflectance

SEMI MF1617 — Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and Epi

Substrates by Secondary Ion Mass Spectroscopy

SEMI MF1726 — Practice for Analysis of Crystallographic Perfection of Silicon Wafers

SEMI MF1727 — Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers

SEMI MF1809 — Guide for Selection and Use for Etching Solutions to Delineate Structural Defects in Silicon

SEMI T3 — Specification for Wafer Box Labels

SEMI T7 — Specification for Back Surface Marking of Double-Side Polished Wafers with a Two-Dimensional

Matrix Code Symbol

3.2 JIS Standards

H 0609 — Test Methods of Crystalline Defects in Silicon by Preferential Etch Techniques

H 0614 — Visual Inspection for Silicon Wafers with Specular Surfaces

Z 8741 — Specular Glossiness–Method of Measurement

3.3 DIN Standards

50434 — Determination of Crystal Defects in Monocrystalline Silicon Using Etching Techniques on {111} and

{100} Surfaces

50443/1 — Recognition of Defects and Inhomogenities in Semiconductor Single Crystals by X-Ray Topography:

Silicon

3.4 ISO Standard

ISO 14706 — Surface Chemical Analysis – Determination of Surface Elemental Contamination on Silicon Wafers

by Total Reflection X-Ray Fluorescence Spectroscopy (TXRF) on silicon wafers by total reflection X-ray

fluorescence spectroscopy (TXRF)

3.5 ANSI Standards

ANSI/ASQC Z1.4 — Sampling Procedures and Tables for Inspection by Attributes

ANSI/EIA 556-B — Outer Shipping Container Standard

3.6 ASTM Standards

D 523 — Standard Test Method for Specular Gloss

E 122 — Standard Practice for Choice of Sample Size to Estimate the Average Quality of a Lot or Process

1 Japanese Industrial Standards, Available through the Japanese Standards Association, 1-24, Akasaka 4-Chome, Minato-ku, Tokyo 107-8440,

Japan. Telephone: 81.3.3583.8005; Fax: 81.3.3586.2014 Website: www.jsa.or.jp.

2 Deutches Institut für Normung e.V., standards are available in both English and German editions from Beuth Verlag GmbH, Burggrafenstrasse

6, 10787 Berlin, Germany, Telephone: 49.30.2601-0, Fax: 49.30.2601.1263, Website: www.beuth.de

3 International Organization for Standardization, ISO Central Secretariat, 1, rue de Varembé, Case postale 56, CH-1211 Geneva 20, Switzerland.

Telephone: 41.22.749.01.11; Fax: 41.22.733.34.30 Website: www.iso.ch.

4 American National Standards Institute, New York Office: 25 West 43rd Street, New York, NY 10036, USA. Telephone: 212.642.4900, Fax:

212.398.0023, Website: www.ansi.org

5 ASTM International, 100 Barr Harbor Drive, West Conshohocken, Pennsylvania 19428-2959, USA. Telephone: 610.832.9585, Fax:

610.832.9555, Website: www.astm.org

SEMI M57-0705 © SEMI 2004, 2005 3

NOTICE: Unless otherwise indicated, all documents cited shall be the latest published versions.

4 Terminology

4.1 Most general terms, acronyms, and symbols relating to silicon technology are defined in SEMI M59.

4.2 Terms specific to commonly-used annealed wafers are defined as follows:

4.2.1 annealed wafer — wafer that has a defect (COP) free zone near the surface resulting from high temperature

annealing under a neutral or reducing atmosphere.

4.2.2 argon annealed wafer — annealed wafer produced under argon atmosphere.

4.2.3 hydrogen annealed wafer — annealed wafer produced under hydrogen atmosphere.

5 Ordering Information

5.1 Purchase orders for silicon annealed wafers furnished to this guide shall include the appropriate order entry

information from Table 1, Polished Wafer Specification Format for Order Entry, in SEMI M1. All information in

Part 1, General Information, and the following items from Part 2, Polished Wafer or Substrate, shall be included:

 2-1.1 Growth Method

 2-1.3 Crystal Orientation

 2-1.4 Conductivity Type

 2-1.5 Dopant

 2-1.6 Nominal Edge Exclusion

 2-1.7 Co-dopant in Crystal

 2-1.8 Wafer Surface Orientation

 2-2.1 Resistivity (Center point)

 2-2.2 Radial Resistivity Variation

 2-3.1 Oxygen Concentration/Calibration Factor

 2-3.2 Radial Oxygen Variation

 2-3.3 Carbon Concentration (Background)

 2-4.3 Lineage

 2-4.4 Twin Boundary

 2-4.5 Swirl

 2-5.1 Wafer ID Marking

 2-5.2 Front Surface Thin Films

 2-5.4 Extrinsic Gettering

 2-5.5 Backseal

 2-6.1 Diameter

 2-6.6 Edge Profile

 2-6.7 Thickness



2-6.8 Total Thickness Variation (TTV)

 2-9.1 Edge Chips (Back Surface)

 2-9.8 Brightness (Gloss) (Back Surface)

 2-9.9 Scratches (Macro) (Back Surface)

SEMI M57-0705 © SEMI 2004, 2005 4

Table 1 Silicon Wafer Specification Format for Order Entry, Part 5 Annealed Wafers

ITEM SPECIFICATION MEASUREMENT METHOD

5-1. ANNEALING CONDITIONS

5-1.1 Annealing Atmosphere [ ]Hydrogen; [ ]Argon; [ ]Other: (specify)_____

5-2. POST-ANNEAL WAFER PREPARATION CHARACTERISTIC

5-2.1 Edge Surface Condition [ ]Ground; [ ]Etched; [ ]Polished

5-3. POST-ANNEAL DIMENSIONAL CHARACTERISTICS

5-3.1 Warp

[ ] µm; max.

[ ]SEMI MF657; [ ]SEMI MF1390; [ ]Other: (specify)________

5-3.2 Flatness, Site

Acronym

: [ ] [ ] [ ] [ ] Value: Not greater than [ ]µm

Site Size ___ mm × ___ mm

% Usable Area________

[ ]Include partial sites; [ ]Do not include partial sites

Offset: x = [ ] mm, y = [ ] mm

[ ]SEMI MF1530; [ ]Other: (specify)_____________

5-4. POST-ANNEAL FRONT SURFACE CHEMISTRY

5-4.1 Surface Metal Contamination

5-4.1.1 Sodium

[ ]Not greater than [  10 ]atoms/cm

[ ]ICP/MS; [ ]AAS; [ ]SEMI MF1617 (SIMS);