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SEMI M57-0705 © SEMI 2004, 2005 4 Table 1 Silicon Wafer Specification Format fo r Order Entry, Part 5 A nnealed Wafers ITEM SPECIFICATION MEASUREMENT METHOD 5-1. ANNEALING CONDITIONS 5-1.1 Annealing Atmosphere [ ]Hydroge…
SEMI M57-0705 © SEMI 2004, 2005 3
NOTICE: Unless otherwise indicated, all documents cited shall be the latest published versions.
4 Terminology
4.1 Most general terms, acronyms, and symbols relating to silicon technology are defined in SEMI M59.
4.2 Terms specific to commonly-used annealed wafers are defined as follows:
4.2.1 annealed wafer — wafer that has a defect (COP) free zone near the surface resulting from high temperature
annealing under a neutral or reducing atmosphere.
4.2.2 argon annealed wafer — annealed wafer produced under argon atmosphere.
4.2.3 hydrogen annealed wafer — annealed wafer produced under hydrogen atmosphere.
5 Ordering Information
5.1 Purchase orders for silicon annealed wafers furnished to this guide shall include the appropriate order entry
information from Table 1, Polished Wafer Specification Format for Order Entry, in SEMI M1. All information in
Part 1, General Information, and the following items from Part 2, Polished Wafer or Substrate, shall be included:
2-1.1 Growth Method
2-1.3 Crystal Orientation
2-1.4 Conductivity Type
2-1.5 Dopant
2-1.6 Nominal Edge Exclusion
2-1.7 Co-dopant in Crystal
2-1.8 Wafer Surface Orientation
2-2.1 Resistivity (Center point)
2-2.2 Radial Resistivity Variation
2-3.1 Oxygen Concentration/Calibration Factor
2-3.2 Radial Oxygen Variation
2-3.3 Carbon Concentration (Background)
2-4.3 Lineage
2-4.4 Twin Boundary
2-4.5 Swirl
2-5.1 Wafer ID Marking
2-5.2 Front Surface Thin Films
2-5.4 Extrinsic Gettering
2-5.5 Backseal
2-6.1 Diameter
2-6.6 Edge Profile
2-6.7 Thickness
2-6.8 Total Thickness Variation (TTV)
2-9.1 Edge Chips (Back Surface)
2-9.8 Brightness (Gloss) (Back Surface)
2-9.9 Scratches (Macro) (Back Surface)
SEMI M57-0705 © SEMI 2004, 2005 4
Table 1 Silicon Wafer Specification Format for Order Entry, Part 5 Annealed Wafers
ITEM SPECIFICATION MEASUREMENT METHOD
5-1. ANNEALING CONDITIONS
5-1.1 Annealing Atmosphere [ ]Hydrogen; [ ]Argon; [ ]Other: (specify)_____
5-2. POST-ANNEAL WAFER PREPARATION CHARACTERISTIC
5-2.1 Edge Surface Condition [ ]Ground; [ ]Etched; [ ]Polished
A
5-3. POST-ANNEAL DIMENSIONAL CHARACTERISTICS
5-3.1 Warp
[ ] µm; max.
[ ]SEMI MF657; [ ]SEMI MF1390; [ ]Other: (specify)________
5-3.2 Flatness, Site
Acronym
#2
: [ ] [ ] [ ] [ ] Value: Not greater than [ ]µm
Site Size ___ mm × ___ mm
% Usable Area________
[ ]Include partial sites; [ ]Do not include partial sites
Offset: x = [ ] mm, y = [ ] mm
[ ]SEMI MF1530; [ ]Other: (specify)_____________
5-4. POST-ANNEAL FRONT SURFACE CHEMISTRY
5-4.1 Surface Metal Contamination
5-4.1.1 Sodium
[ ]Not greater than [ 10 ]atoms/cm
2
[ ]ICP/MS; [ ]AAS; [ ]SEMI MF1617 (SIMS);
[ ]Other: (specify)_____________
5-4.1.2 Aluminum
[ ]Not greater than [ 10 ]atoms/cm
2
[ ]ICP/MS; [ ]AAS; [ ]SEMI MF1617 (SIMS);
[ ]Other: (specify)_____________
5-4.1.3 Potassium
[ ]Not greater than [ 10 ]atoms/cm
2
[ ]ICP/MS; [ ]AAS; [ ]SEMI MF1617 (SIMS);
[ ]SEMI M33 (TXRF); [ ]ISO 14706 (TXRF);
[ ]Other: (specify)_____________
5-4.1.4 Chromium
[ ]Not greater than [ 10 ]atoms/cm
2
[ ]ICP/MS; [ ]AAS; [ ]SEMI MF1617 (SIMS);
[ ]SEMI M33 (TXRF); [ ]ISO 14706 (TXRF);
[ ]Other: (specify)_____________
5-4.1.5 Iron
[ ]Not greater than [ 10 ]atoms/cm
2
[ ]ICP/MS; [ ]AAS; [ ]SEMI MF1617 (SIMS);
[ ]SEMI M33 (TXRF); [ ]ISO 14706 (TXRF);
[ ]Other: (specify)_____________
5-4.1.6 Nickel
[ ]Not greater than [ 10 ]atoms/cm
2
[ ]ICP/MS; [ ]AAS; [ ]SEMI MF1617 (SIMS);
[ ]SEMI M33 (TXRF); [ ]ISO 14706 (TXRF);
[ ]Other: (specify)_____________
5-4.1.7 Copper
[ ]Not greater than [ 10 ]atoms/cm
2
[ ]ICP/MS; [ ]AAS; [ ]SEMI MF1617 (SIMS);
[ ]SEMI M33 (TXRF); [ ]ISO 14706 (TXRF);
[ ]Other: (specify)_____________
SEMI M57-0705 © SEMI 2004, 2005 5
ITEM SPECIFICATION MEASUREMENT METHOD
5-4.1.8 Zinc
[ ]Not greater than [ 10 ]atoms/cm
2
[ ]ICP/MS; [ ]AAS; [ ]SEMI MF1617 (SIMS);
[ ]SEMI M33 (TXRF); [ ]ISO 14706 (TXRF);
[ ]Other: (specify)_____________
5-4.2 Other Surface Metals (List Separately)
5-4.2.1 Calcium
[ ]Not greater than [ 10 ]atoms/cm
2
[ ]ICP/MS; [ ]AAS; [ ]SEMI MF1617 (SIMS);
[ ]SEMI M33 (TXRF); [ ]ISO 14706 (TXRF);
[ ]Other: (specify)_____________
5-5. POST-ANNEAL FRONT SURFACE INSPECTION CHARACTERISTICS
5-5.1 Slip [ ]None; [ ]Other: (specify)___________ [ ]SEMI MF1809; [ ]JIS H 0609; [ ]DIN 50434;
[ ]DIN 50443/1; [ ]Other: (specify)_________
5-5.2 Oxidation Induced Stacking
Faults (OSF)
[ ]None; [ ]Not greater than [ ] per cm
2
Test Cycle: [ ]SEMI MF1727;
[ ]JIS H 0609; [ ]Other: (specify)____
Observation Method: [ ]SEMI MF1726;
[ ]JIS H 0609; [ ]DIN 50443/1;
[ ]Other: (specify)____________
5-5.3 Scratches – Macro
[ ]None; Total Length = [ ]mm [ ]SEMI MF523; [ ]JIS H 0614; [ ]SSIS;
#3
[ ]Other: (specify)___________
5-5.4 Scratches – Micro [ ]None; [ ]Total Length = [ ]mm [ ]SEMI MF523; [ ]JIS H 0614; [ ]SSIS;
#3
[ ]Other: (specify)___________
5-5.5 Haze
[ ]None; [ ]Other: (specify)___________ [ ]SEMI MF523; [ ]JIS H 0614; [ ]SSIS;
#3
[ ]Other: (specify)___________
5-5.6 Localized Light Scatterers
(Total LLS)
Size: [ ] m (LSE) Count: [ ] [ ] per wafer; [ ] per cm
2
Size: [ ] m (LSE) Count: [ ] [ ] per wafer; [ ] per cm
2
[ ]SEMI MF523; [ ]JIS H 0614; [ ]SSIS;
#3
[ ]Other: (specify)___________
5-5.7 Localized Light Scatterers
(COP only)
Size: [ ] m (LSE) Count: [ ] [ ] per wafer; [ ] per cm
2
[ ]SEMI MF523; [ ]JIS H 0614; [ ]SSIS;
#3
[ ]Other: (specify)___________
5-5.8 Other Front Surface Defects Terracing, Surface microroughness, Nanotopography, and other
attributes as discussed between supplier and customer
As discussed between supplier and customer.
5-6. POST- ANNEAL BACK SURFACE INSPECTION CHARACTERISTICS
5-6.1 Contamination/Area
[ ]None; [ ]Other: (specify)___________ [ ]SEMI MF 523; [ ]JIS H 0614; [ ]Other: (specify)__________
5-6.2 Other Back Surface Defects
Support-related back surface defects as discussed between
supplier and customer
As discussed between supplier and customer.
5-7. OTHER POST-ANNEAL CHARACTERISTICS
5-7.1 Bulk Iron (Fe)
[ ]Not greater than [ ] 10
[ ]
atoms/cm
3
[ ]SEMI MF391; [ ]SEMI MF1535; [ ]Other:
(specify)______________
5-7.2 Depth of BMD Denuded Zone
[ ]more than [ ] m
As agreed between supplier and customer