semi合集-English.pdf - 第5422页

SEMI M59-0305 © SEMI 2005 3 4.32 JIS — Ja pan Industrial Standa rd, standards published by the Japa nese Standards Association. 6 4.33 LLS — l o calized light scatterer. 4.34 LPD — light point defect, a t erm formerly wi…

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SEMI M59-0305 © SEMI 2005 2
4.5 As — arsenic, an n-type dopant in silicon.
4.6 ASTM — ASTM International,
3
previously the American Society for Testing and Materials, an American
organization that developed standards for silicon technology between 1964 and 2002; these standards, though
developed primarily by American experts have been used world-wide.
4.7 B — boron, a p-type dopant in silicon.
4.8 BMD — bulk micro defect.
4.9 BRDF — bi-directional reflectance distribution function.
4.10 CCW — counterclockwise, rotation in the direction opposite to that of the hands of a clock.
4.11 COP — crystal originated pit, a small pit or plurality of small pits introduced during crystal growth that act as
an LLS.
4.12 CRM — certified reference material.
4.13 CVD — chemical vapor deposition, a method for producing epitaxial films.
4.14 CW — clockwise, rotation in the direction of the hands of a clock.
4.15 Cz — Czochralski, a type of crystal growth.
4.16 DDS — difference data set, the difference between the reference data set and the sample data set.
4.17 DI — deionized, generally referred to in connection with electronic grade water.
4.18 DIN — Deutches Institut für Normung,
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the German national standards organization, which has developed
numerous standards for silicon during the last three decades.
4.19 FPD — focal plane deviation.
4.20 FQA — fixed quality area of a silicon wafer.
4.21 FZ — float zone, a type of crystal growth.
4.22 GBIR — the most common type of global flatness, see Appendix 1 of SEMI M1 for other types of global
flatness.
4.23 GFA — gas fusion analysis, a method for measuring total oxygen in silicon.
4.24 GRR — grand round robin, the international interlaboratory experiment that established IOC-88.
4.25 IC — integrated circuit.
4.26 ICP/MS — inductively coupled plasma mass spectroscopy, a method for analysis of impurities, not yet
standardized.
4.27 IOC-88 — international oxygen conversion factor-1988, the currently universally adopted conversion factor
between the infrared absorption peak and the interstitial oxygen content in silicon.
4.28 ID — identification, referring to the laser mark on silicon and other semiconductor wafers.
4.29 ISO — International Organization for Standardization,
1
a body recognized by the World Trade Organization as
a developer of international standards, including a few applicable to silicon technology.
4.30 JEIDA — Japan Electronic Industry Development Association, now JEITA
4.31 JEITA — Japanese Electronic and Information Technology Industries Association,
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successor to JEIDA upon
the merging of JEIDA and the Electronic Industries Association of Japan (EIAJ), which has a committee that
develops standards for silicon materials and technology.
3 ASTM International, 100 Barr Harbor Drive, West Conshohocken, Pennsylvania 19428-2959, USA. Telephone: 610.832.9585, Fax:
610.832.9555 Website:
www.astm.org.
4 Deutches Institut für Normung e.V., Beuth Verlag GmbH, Burggrafenstrasse 4-10, D 10787 Berlin, Germany, website: www.din.de.
5 Japan Electronics and Information Technology Industries Association, 3rd floor, Mitsui Sumitomo Kaijo Bldg. Annex, 11, Kanda-Surugadai
3-chome, Chiyoda-ku, Tokyo 101-0062, Japan, Website:
www.jeita.or.jp
.
SEMI M59-0305 © SEMI 2005 3
4.32 JIS — Japan Industrial Standard, standards published by the Japanese Standards Association.
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4.33 LLS — localized light scatterer.
4.34 LPD — light point defect, a term formerly widely used, but now superseded by the term LLS.
4.35 MAE — mixed acid etchant.
4.36 MCz — magnetic Czochralski, a type of crystal growth that generally yields crystals with lower oxygen
content than Cz growth.
4.37 NTD — neutron transmutation doped, a method for forming high resistivity n-type silicon.
4.38 OSF — oxidation induced stacking fault, a defect in silicon wafers.
4.39 P — phosphorus, an n-type dopant in silicon.
4.40 ppba — parts per billion atomic.
4.41 ppbw — parts per billion by weight.
4.42 ppma — parts per million atomic.
4.43 ppmw — parts per million by weight.
4.44 PSD — power spectral density.
4.45 PTFE — polytetrafluoroethylene, an HF-resistant material for sample bottles, lids, and tongs.
4.46 RDS — reference data set.
4.47 rf — radio frequency.
4.48 RPD — reference plane deviation.
4.49 RSF — relative sensitivity factor, used in TXRF analysis of surface metals to relate the concentrations of a
variety of elements to the calibration element.
4.50 Sb — antimony, an n-type dopant in silicon.
4.51 SCFM — standard cubic feet per minute.
4.52 SDS — sample data set.
4.53 SFQR — the most commonly used type of site flatness, see Appendix 1 of SEMI M1 for other types of site
flatness.
4.54 Si
— silicon.
4.55 SIMS — secondary ion mass spectroscopy, a method for analysis of impurities.
4.56 SPC — statistical process control.
4.57 SRM — registered trademark for a CRM produced by the National Institute for Standards and Technology.
4.58 SSIS — scanning surface inspection system, an automated instrument for examining the surface of silicon
wafers for LLSs and XLSs.
4.59 TIR — total indicator reading (also known as total indicator runout).
4.60 TTV — total thickness variation.
4.61 TXRF — total reflection x-ray reflectance spectroscopy, a surface metal analysis technique.
4.62 VPD — vapor phase decomposition, a method for dissolving an oxide film containing impurities to be
examined by means of hydrofluoric (HF) acid vapor.
6 Japanese Standards Association, 1-24, Akasaka 4-Chome, Minato-ku, Tokyo 107-8440, Japan. Telephone: 81.3.3583.8005; Fax:
81.3.3586.2014 Website:
www.jsa.or.jp
.
SEMI M59-0305 © SEMI 2005 4
4.63 XLS — extended light scatterer, a relatively large surface defect on silicon wafers, such as scratches and
regions of high surface roughness.
5 Definitions
5.1 acceptor — an impurity in a semiconductor that accepts electrons excited from the valence band, leading to hole
conduction.
5.2 anisotropic, adj. — exhibiting different physical properties in differing crystallographic directions.
5.3 anisotropic etch — a selective etch that exhibits an accelerated etch rate along specific crystallographic
directions.
5.3.1 Discussion — Anisotropic etches are used to determine crystal orientation, to fabricate micromechanical
structures, and to facilitate dielectric component isolation.
5.4 annealed wafer — wafer that has a defect (COP) free zone near the surface resulting from high temperature
annealing under a neutral or reducing atmosphere.
5.5 back surface — the exposed surface opposite to that upon which active semiconductor devices have been or will
be fabricated.
5.6 backseal — a film of silicon dioxide or other insulator placed over the back surface of a silicon wafer to inhibit
outdiffusion of the majority dopant impurity.
5.7 backside — not preferred, use back surface.
5.8 bow — the deviation of the center point of the median surface of a free, unclamped wafer from a median-surface
reference plane established by three points equally spaced on a circle with diameter a specified amount less than the
nominal diameter of the wafer.
5.9 carrier — an entity capable of carrying electric charge through a solid, for example, valence holes and
conduction electrons in semiconductors; also known as charge carrier.
5.10 chem-mechanical polish — a process for the removal of surface material from the wafer that uses chemical and
mechanical actions to achieve a mirror-like surface for subsequent processing.
5.11 chip — region where material has been unintentionally removed from the surface or edge of the wafer.
5.12 cleavage plane — a crystallographically preferred fracture plane.
5.13 concentration — relative amount of a minority constituent of a mixture to the majority constituent (for
example parts per million, parts per billion, or percent) by either volume or weight.
5.14 conductivity (electrical), [(·cm)
1
] — a measure of the ease with which charge carriers flow in a material;
the reciprocal of resistivity.
5.14.1 Discussion — In a semiconductor, the conductivity is proportional to the product of free carrier density,
electron electrical charge, and carrier mobility. Most variant of all crystal properties, conductivity can range over 13
orders of magnitude. Conductivity can be locally modified by temperature, carrier injection, irradiation, or magnetic
field.
5.15 conductivity type — a property that identifies the majority charge carrier in the semiconductor; see also n-type,
p-type.
5.16 contaminant, particulate — see localized light scatterer.
5.17 contamination, area — matter, unintentionally added to the surface of a wafer, of extent greater than a single
localized light scatterer.
5.17.1 Discussion — Area contamination, a type of extended light scatterer, may be foreign matter on the wafer
surface resulting from chuck marks, finger or glove prints, stains, wax or solvent residues, etc.
5.18 contamination, particulate — a particle or particles on the surface of a wafer, see localized light scatterer.
5.19 crack — cleavage or fracture that extends to the surface of a wafer.