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SEMI P37-1102 © SEMI 2001, 2002 10 RELATED INFORMATION 1 MATERIAL PROPERTIES NOTE: This rela ted inform ation is not an official part of SEM I P37 and was derived fr om the work of the originating committee. Th is relate…
SEMI P37-1102 © SEMI 2001, 2002 9
NOTICE: SEMI makes no warranties or representations as to the suitability of the standards set forth herein for any
particular application. The determination of the suitability of the standard is solely the responsibility of the user.
Users are cautioned to refer to manufacturer's instructions, product labels, product data sheets, and other relevant
literature, respecting any materials or equipment mentioned herein. These standards are subject to change without
notice.
By publication of this standard, Semiconductor Equipment and Materials International (SEMI) takes no position
respecting the validity of any patent rights or copyrights asserted in connection with any items mentioned in this
standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights, and
the risk of infringement of such rights are entirely their own responsibility.
SEMI P37-1102 © SEMI 2001, 2002 10
RELATED INFORMATION 1
MATERIAL PROPERTIES
NOTE: This related information is not an official part of SEMI P37 and was derived from the work of the
originating committee. This related information was approved for publication by full letter ballot procedures on
August 27, 2001.
Table A1-1 Typical EUVL Mask Substrate Bulk Material Properties (for information only)
Property Symbol NZTE
Mean Specific Heat C
p
(J/kg-°C) 750–820
Thermal Conductivity K (W/m-°C) 1.3–1.6
Density ρ (g/cm
3
) 2.1–2.6
Elastic Modulus E (GPa) 65–91
Poisson’s Ratio ν 0.17–0.25
Index of refraction n 1.4–1.6
Electrical conductivity at 20°C σ (Siemens/m) 10
-14
–10
-18
Dielectric constant ε at 1 KHz 3.5–9.0
NOTICE: SEMI makes no warranties or representations as to the suitability of the standards set forth herein for any
particular application. The determination of the suitability of the standard is solely the responsibility of the user.
Users are cautioned to refer to manufacturer's instructions, product labels, product data sheets, and other relevant
literature respecting any materials mentioned herein. These standards are subject to change without notice.
By publication of this standard, SEMI takes no position respecting the validity of any patent rights or copyrights
asserted in connection with any item mentioned in this standard. Users of this standard are expressly advised that
determination of any such patent rights or copyrights, and the risk of infringement of such rights, are entirely their
own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
f
the contents in whole or in part is forbidden without express written
consent of SEMI.
SEMI P38-1103 © SEMI 2002, 2003 1
SEMI P38-1103
SPECIFICATION FOR ABSORBING FILM STACKS AND MULTILAYERS
ON EXTREME ULTRAVIOLET LITHOGRAPHY MASK BLANKS
This specification was technically approved by the Global Micropatterning Committee and is the direct
responsibility of the North American Microlithography Committee. Current edition approved by the North
American Regional Standards Committee on September 3, 2003. Initially available at www.semi.org
October 2003; to be published November 2003. Originally published November 2002.
1 Purpose
1.1 This specification covers the requirements of the
multilayer coating and of the absorbing film stack on
Extreme Ultraviolet Lithography (EUVL) masks.
2 Scope
2.1 This standard details the physical characteristics
and tolerances required for EUVL mask multilayer
coatings. Material composition is not specified to allow
for innovation in materials.
2.2 This standard details the physical characteristics
and tolerances required for EUVL mask absorbing film
stacks. The absorbing film stack comprises two or
more layers. Material composition is not specified to
allow for innovation in materials.
2.3 For purposes of this standard, the supplier
fabricates the mask blank and provides it to the user. In
most cases, the user patterns some of the layers on the
front side of the mask blank.
NOTICE: This standard does not purport to address
safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine
the applicability of regulatory or other limitations prior
to use.
3 Referenced Standards
3.1 SEMI Standards
SEMI P37 — Specification For Extreme Ultraviolet
Lithography Mask Substrates
3.2 ANSI/ASQC Standards
1
ANSI/ASQC Z1.4 Sampling Procedures and Tables
for Inspection by Attributes
1 American National Standards Institute, Headquarters: 1819 L
Street, NW, Washington, DC 20036, USA. Telephone: 202.293.8020;
Fax: 202.293.9287, New York Office: 11 West 42nd Street, New
York, NY 10036, USA. Telephone: 212.642.4900; Fax:
212.398.0023, Website: www.ansi.org
3.3 ISO Standard
2
ISO 14644-1 Cleanrooms and Associated Controlled
Environments Part 1: Classification of Air Cleanliness
NOTICE: Unless otherwise indicated, all documents
cited shall be the latest published versions.
4 Terminology
4.1 Definitions
4.1.1 absorber layers — one or more layers of material
that absorb EUV radiation and are patterned in the
mask fabrication process. These layers are deposited
on top of the buffer layer (see Figure 1).
4.1.2 absorber stack — stack of film layers that
includes the absorber layer or layers and the buffer
layer. (See Figure 1.)
4.1.3 buffer layer — layer of material beneath the
absorber layer or layers. See Figure 1. This layer is
patterned on the final mask.
4.1.4 capping layer — layer or layers on top of the
multilayers are not patterned. (See Figure 1.)
4.1.5 conductive layer — layer deposited on the
backside of the EUV mask substrate that is electrically
conductive. (See Figure 1.)
4.1.6 defect — any flaw or imperfection in the opaque
coating, reflective multilayer coating, or functional
pattern of a mask that will reproduce itself in a
photoresist film and impair the proper functioning of
the microelectronic device being fabricated.
4.1.7 EUV — extreme ultraviolet radiation with
wavelength in the range of 4 to 20 nm.
4.1.8 multilayer stack — stack of film layers that
includes layers deposited on the mask blank to provide
high EUV reflectivity, any capping layers and any
underlayers. (See Figure 1.)
2 International Organization for Standardization, ISO Central
Secretariat, 1, rue de Varembé, Case postale 56, CH-1211 Geneva 20,
Switzerland. Telephone: 41.22.749.01.11; Fax: 41.22.733.34.30,
Website: www.iso.ch