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SEMI G5-87 © SEMI 1 980, 199 6 5 Figure 1 Castellations Figure 2 Chip Illustration Figure 3 Die Attach Surface and Seal Area Figure 4 Metallizat ion Misa lignment

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SEMI G5-87 © SEMI 1980, 1996 4
8.3.3 Pattern Definitions (Cavity Packages) — (See
Figure 4.)
8.3.3.1 Seal Plane Rundown — internal cavity — Not
to exceed 25% of the cavity layer thickness.
8.3.3.2 External to the Cavity — Separation shall not
be less than 0.254 mm (0.010") or 50% of the design
width, whichever is less.
8.3.3.3 Wire Bond Finger Pullback — Not to exceed
maximum from the cavity edge. The minimum exposed
lead length must meet the dimension per applicable
drawing.
8.3.3.4 Wire Bond Finger Rundown — Not to exceed
25% of the ceramic layer thickness or 0.127 mm
(0.005"), whichever is smaller.
8.3.4 Pattern Separation — Minimum shall not be
reduced by more than 50% of the design.
8.4 Lead Attachment
8.4.1 Voids in Braze — 66% of the braze fillet must be
void-free.
8.4.2 Lead Alignment — Misalignment leads to braze
pads — The leads shall not overhang braze pads.
8.4.2.1 Lead Offset — To be specified on user
drawing. Lead center lines must be aligned to within
.178 mm (.007").
8.4.2.2 Lead-to-Lead Misalignment — To exceed ±
10% of nominal lead spacing.
8.4.2.3 Dimensional Criteria — To be specified on
user drawing.
9 Sampling
Sample sizes must meet requirements of MIL-STD-105
or MIL-M-38510 as agreed to between vendor and
customer. Single, double, or multiple samples may be
used.
10 Test Methods
10.1 Mechanical, Electrical, and Thermal Test
Methods — Per MIL-STD-883, unless otherwise noted.
10.1.1 Gold plating thickness shall conform to MIL-
STD-45204. Gold thickness may be determined using
the Beta Backscatter Radiation Method or X-Ray
Fluorescence.
10.1.2 Nickel plating shall conform to MIL-STD-
45204. Nickel thickness may be determined using the
Beta Backscatter Radiation Method.
10.1.3 Seal Ring Flatness — See SEMI G6.
10.1.4 Electrical Trace Resistance — See SEMI G25.
10.1.5 Gold Plating Quality — See SEMI G8.
10.1.6 Die Shear — Destructive — Method 2019.
10.1.7 Wire Bond — Method 2011, Condition D.
Reject for bonds which cause plating to lift from the
base metal of the die attach surface or bonding fingers.
10.1.8 Temperature Cycle — Method 1010, Condition
C.
10.1.9 Thermal Shock — Method 1011, Condition C.
10.1.10 Constant Acceleration — Method 2001,
Condition E.
10.1.11 Mechanical Shock — Method 2002, Condition
B.
10.1.12 Insulation Resistance — Method 1003.
10.1.13 Internal Water Vapor Content — Method
1018.
10.1.14 Hermeticity — Method 1014, Conditions A,
B, and C. The hermetic integrity of the package must be
maintained after all environmental testing.
10.1.15 Lead Integrity — Method 2004, Condition B.
10.1.16 Solderability — 2003.
10.1.17 Moisture Resistance Testing — Method 1004.
11 Packaging and Marking
11.1 Packaging — Containers selected shall be strong
enough, and suitably designed, to provide maximum
protection against crushing, spillage, and other forms of
damage to the container or its contents. Containers shall
afford protection of the contents to contamination from
exposure to excessive moisture or oxidation by gases.
Packaging materials shall be so selected to prevent any
contamination of the ceramic component parts with
paper fibers or organic particles. Regardless of
packaging, all parts should be cleaned before testing or
use.
11.2 Marking — The outer containers shall be clearly
marked identifying:
1. Vendor Part #
2. Customer Part #
3. Quantity
4. Date
5. Vendor Lot #
6. User P.O. number (optional)
7. Drawing number (optional)
SEMI G5-87 © SEMI 1980, 19965
Figure 1
Castellations
Figure 2
Chip Illustration
Figure 3
Die Attach Surface and Seal Area
Figure 4
Metallization Misalignment
SEMI G5-87 © SEMI 1980, 1996 6
Figure 5
Glass Misalignment
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