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SEMI MF43-0705 © SEMI 2003, 2005 1 SEMI MF43-0705 TEST METHODS FOR RESIST IVITY OF SEMICONDUCTOR MATERIALS This test method was technically approved by the global Silicon Wa fer Co mmittee. This edition was approved for …

SEMI MF26-0305 © SEMI 2003, 2005 7

5.4.2 Etch the lapped surface as follows:

5.4.2.1 Etch germanium surfaces with germanium etchant solution (see ¶5.2.2) for 1 min at 25C.

5.4.2.2 Etch silicon surfaces with 45% KOH solution (see ¶5.2.5) or 50% NaOH solution (see ¶5.2.6) for 5 min at

65C.

5.4.3 Mount the specimen containing the prepared surface on the goniometer in the path of the incident light beam.

5.4.4 Adjust the position of the specimen surface to bring the center of the reflected light pattern to the zero

reference point described in ¶5.3.1. The angular reading on the goniometer required to make this adjustment is the

degree of misorientation on the surface under examination.

5.4.5

Check this measurement, where possible, by rotating the surface through 180° of arc. The angular deviation

must remain constant in magnitude but is opposite in sign.

5.4.6 Rotate the specimen through 90° of arc about a normal to the surface under investigation, and repeat the

procedure to measure the second component of angular deviation.

5.5 Calculations

5.5.1 Calculate and record the total angular deviation,



, in accordance with ¶4.5.2.

6 Report

6.1 Report the following information:

6.1.1 Method used (X-ray or optical),

6.1.2 Material investigated,

6.1.3 Crystal reference plane,

6.1.4 Deviation of prepared surface from this reference plane in two mutually perpendicular directions, and

6.1.5 Total angular deviation of prepared surface from the reference plane

7 Precision and Bias

7.1 Test Method A, X-ray Diffraction Orientation — The single instrument precision of the method as defined in

ASTM Practice E 177 is ±15 min of arc (3S) using commercially available X-ray equipment.

7.2 Test Method B, Optical Orientation — The single instrument precision of the method as defined in ASTM

Practice E 177 is ±30 min of arc (3S) using commercially available optical orientation equipment.

8 Keywords

germanium; orientation; preferential etch; semiconductor; silicon; X-ray diffraction

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SEMI MF43-0705 © SEMI 2003, 2005 1

SEMI MF43-0705

TEST METHODS FOR RESISTIVITY OF SEMICONDUCTOR

MATERIALS

This test method was technically approved by the global Silicon Wafer Committee. This edition was

approved for publication by the global Audits and Reviews Subcommittee on April 7, 2005. It was available

at www.semi.org in June 2005 and on CD-ROM in July 2005. Original edition published by ASTM

International as ASTM F 43-64T. Last previous edition SEMI MF43-99.

1 Purpose

1.1 The resistivity of a semiconductor material is an important materials acceptance requirement. Resistivity

determinations made during device fabrication are also widely used for quality control purposes.

1.2 These test methods cover two procedures which are widely used for making routine measurements.

2 Scope

2.1 The two test methods in this standard are as follows:

2.1.1 Method A, Two-Probe — This test method requires a bar specimen of measurable cross section and with

cross-sectional dimensions small in comparison with the length of the bar. For materials for which no specific

referee method has been developed, this test method is recommended for materials acceptance purposes.

2.1.2 Method B, Four-Probe — This test method is rapid and does not require a specimen of regular cross section.

This test method may be used on irregularly shaped specimens, provided a flat region is available for the contacting

probes. As described in this standard, this test method is applicable only to specimens such that the thickness of the

specimen and the distance from any probe point to the nearest edge are both at least four times the probe spacing.

For the special case of specimens of circular cross section with thickness more than one, but less than four, times the

probe spacing, measurements by this test method are possible; the required application of approximate geometric

corrections results in improved accuracy (see ¶10.1.3).

2.2 In general, resistivity measurements are most reliable when made on single crystals, since with such material

local variations in impurity which affect the resistivity are less severe. Localized impurity segregation at grain

boundaries in polycrystalline material may result in large resistivity variations. Such effects are common to either of

the measurement test methods but are more severe with the four-probe test method, and its use, therefore, is not

recommended for polycrystalline material.

2.3 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for

information only.

NOTE 1: DIN 50430 is an equivalent method to Method A and DIN 50431 is an equivalent method to Method B.

NOTE 2: Other standardized test methods are preferred for use in various special circumstances. For measurements on thin

wafers, use SEMI MF84; this method is preferred for referee measurements on silicon wafers. For measurements on specimens

for which point contacts are unsatisfactory, use a procedure in ASTM Test Methods F 76 based either on Van Der Pauw or bridge

specimens. For two-probe referee measurements on cylindrical single crystal bars, use SEMI MF397. For four-probe referee

measurements of sheet resistance on epitaxial layers deposited on or diffused or implanted into opposite conductivity-type

substrates, use SEMI MF374.

NOTICE: This standard does not purport to address safety issues, if any, associated with its use. It is the

responsibility of the user of this standard to establish appropriate safety and health guides and determine the

applicability of regulatory or other limitations prior to use.

3 Limitations

3.1 In making resistivity measurements, spurious results can arise from a number of sources. The following must

be guarded against:

SEMI MF43-0705 © SEMI 2003, 2005 2

3.1.1 Photoconductive and photovoltaic effects can seriously influence the observed resistivity, particularly with

nearly intrinsic material. Therefore make all determinations in a dark chamber unless experience has shown that the

material is insensitive to ambient illumination.

3.1.2 Spurious currents can be introduced in the testing circuit when the equipment is located near high-frequency

generators. If equipment is located near such sources, adequate shielding must be provided.

3.1.3 Minority carrier injection during the measurement can occur due to the electric field in the specimen. With

material possessing high minority carrier lifetime and high resistivity, such injection can result in a lowering of the

resistivity for distance of several centimeters. Carrier injection can be detected by repeating the measurements at

lower current. In the absence of injection no increase in resistivity should be observed. It is recommended that the

current used in a resistivity measurement be as low as possible, consistent with the required precision.

3.1.4 Semiconductors have a significant temperature coefficient of resistivity. Consequently, the temperature of

the specimen should be known at the time of the measurement and the current used should be small to avoid

resistive heating. If resistive heating is suspected, it can be detected by a change in readings as a function of time

starting immediately after the current is applied. Temperature coefficients for extrinsic germanium and silicon near

room temperature are available in the literature.

For referee purposes, it is recommended that the test be performed

at 23 ± 0.5°C.

NOTE 3: Temperature correction factors for silicon are given in tabular form in SEMI MF84 together with equations for

generating the factors.

3.1.5 Vibration of the probes sometimes causes troublesome changes in the contact resistance. If difficulty is

encountered, shock mount the apparatus.

4 Referenced Standards and Documents

4.1 SEMI Standards

SEMI M1 — Specifications for Polished Monocrystalline Silicon Wafers

SEMI M59 — Terminology for Silicon Technology

SEMI MF84 — Test Method for Measuring Resistivity of Silicon Wafers with an In-line Four-point Probe

SEMI MF374 — Test Method for Sheet Resistance of Silicon Epitaxial, Diffused, Polysilicon, and Ion-implanted

Layers Using an In-line Four-point Probe

SEMI MF397 — Test Method for Resistivity of Silicon Bars Using a Two-point Probe

SEMI MF533 — Test Method for Thickness and Thickness Variation of Silicon Slices

SEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers

4.2 ANSI Standard

B74.10 — Specification for Grading of Abrasive Microgrits

4.3 ASTM Standard

F 76 — Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-

Crystal Semiconductors

1 Bullis, W. M., Brewer, F. H., Kolstad, C. D., and Swaratzendruber, L. I., “Temperature Coefficient of Resistivity of Silicon and Germanium

near Room Temperature,” Solid State Electron. 11, 639646 (1968).

2 American National Standards Institute, American National Standards Institute, New York Office: 25 West 43rd Street, New York, NY 10036,

USA. Telephone: 212.642.4900, Fax: 212.398.0023, Website:

www.ansi.org

3 Annual Book of ASTM Standards, Vol 10.04, ASTM International, 100 Barr Harbor Drive, West Conshohocken, PA 19428. Telephone: 610-

832-9500, Fax: 610-832-9555, Website: