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4 Referenced Standards 4.1 SEM I Standards SEMI E10 — Specificati on for Definiti on and Measurement of Equipment Reliability, Availability, and Maintainability (RAM) SEMI E78 — Electrostatic Compatibility - Guide to Ass…

SEMI E113-1104

SPECIFICATION FOR SEMICONDUCTOR PROCESSING EQUIPMENT

RF POWER DELIVERY SYSTEMS

This specification was technically approved by the Global Metrics Committee and is the direct responsibility

of the North American Metrics Committee. Current edition approved by the North American Regional

Standards Committee on July 11, 2004. Initially available at www.semi.org September 2004; to be published

November 2004. Originally published November 2001; previously published November 2003.

1 Purpose

1.1 Process plasmas are used throughout the

semiconductor industry for the etching and deposition

of thin films. The majority of the process chambers use

RF power to produce and sustain the plasmas. Because

the reliability and repeatability of the plasma directly

impacts wafer-processing results, RF power delivery

systems are a key element of semiconductor

manufacturing technology. The accurate and

reproducible performance of the entire RF power

generation system, including the RF influenced

parameters of the plasma, must be within commonly

accepted tolerances.

1.2 Design criteria for RF reliability and repeatability

demand standardized testing and evaluation of the

performance of the RF power delivery systems and

control instrumentation on a chamber. Not only must

the subsystems (i.e., the generator, cable assemblies,

matching network, chuck/coil) be characterized, but the

performance of the integrated system must also be

characterized over the intended operating range.

1.3 It is the intent of this standard to provide RF power

delivery specifications for semiconductor processing

equipment that leads to improved system and

subsystem performance. It outlines performance

criteria as well as required documentation that must be

supplied with the system or subsystem components.

The goal of the document is to provide the

specifications needed to produce a well-characterized

RF power delivery system, where stability,

repeatability, and important electrical parameters such

as delivered power, current/voltage, and the impedance

of the system can be determined within the operating

space.

2 Scope

2.1 This document specifies the minimum performance

criteria for RF equipment used in the semiconductor

industry. It does not address specific test methods or

procedures for performance verification.

2.2 The primary focus for this specification is

semiconductor processing equipment including, but not

limited to, the following tool types:

 Dry etch equipment, and

 Film deposition equipment (CVD and PVD).

2.3 This specification applies to semiconductor

processing equipment RF power delivery systems

whose power is directly used to produce and sustain the

plasma.

NOTICE: This standard does not purport to address

safety issues, if any, associated with its use. It is the

responsibility of the users of this standard to establish

appropriate safety and health practices and determine

the applicability of regulatory or other limitations prior

to use.

3 Limitations

3.1 This standard is meant to address RF systems that

primarily operate in the frequency range of 0.2–100

MHz. It does not address higher frequency RF systems

or microwave systems.

3.2 This standard is not meant to address pulsed-

power RF systems.

3.3 This standard is intended to be a performance

specification and is not intended to address design

issues related to safety, which are covered elsewhere in

the SEMI Standards.

3.4 This standard does not address any safety or

performance issues related to RF emissions or electrical

codes (e.g., Underwriter’s Laboratory, Inc. (UL), the

National Electrical Code (NEC), Federal

Communications Commission (FCC)). It is the

responsibility of the users of this standard to conform to

the appropriate local codes and regulations as applied to

this type of equipment, some of which are covered by

referenced documents.

SEMI E113-1104 © SEMI 2001, 2004 1

4 Referenced Standards

4.1 SEMI Standards

SEMI E10 — Specification for Definition and

Measurement of Equipment Reliability, Availability,

and Maintainability (RAM)

SEMI E78 — Electrostatic Compatibility - Guide to

Assess and Control Electrostatic Discharge (ESD) and

Electrostatic Attraction (ESA) for Equipment

SEMI E114 — Test Method for RF Cable Assemblies

Used in Semiconductor Processing Equipment RF

Power Delivery Systems

SEMI E115 — Test Method for Determining the Load

Impedance and Efficiency of Matching Networks Used

in Semiconductor Processing Equipment RF Power

Delivery Systems

SEMI E135 — Test Method for RF Generators to

Determine Transient Response for RF Power Delivery

Systems used in Semiconductor Processing Equipment

4.2 IEEE Standard

IEEE-STD-383 — IEEE Standard for Type Test of

Class 1E Electrical Cables, Field Splices, and

Connections for Nuclear Power Generating Stations

4.3 MIL-Specification

MIL-C-17G — General Specification for Cables, Radio

Frequency, Flexible and Semirigid

MIL-PRF-39012D — General Specification for

Connectors, Coaxial, Radio Frequency

NOTICE: Unless otherwise indicated, all documents

cited shall be the latest published versions.

5 Terminology

5.1 Abbreviations and Acronyms

5.1.1 CVD — Chemical Vapor Deposition

5.1.2 PVD — Physical Vapor Deposition

5.1.3 VSWR — Voltage Standing Wave Ratio

5.2 Definitions

5.2.1 cable assembly — the section of cable

(transmission line), including the connectors, used to

connect various parts of the RF power delivery system.

1 Institute of Electrical and Electronics Engineers, IEEE Operations

Center, 445 Hoes Lane, P.O. Box 1331, Piscataway, New Jersey

08855-1331, USA. Telephone: 732.981.0060; Fax: 732.981.1721

website: www.ieee.org

2 Available from Naval Publication and Forms Center, 5801 Tabor

Avenue, Philadelphia PA 19120 U.S.A website:

www.dodssp.daps.mil/products.htm.

5.2.2 electrical length — the length of the cable

assembly at the operating frequency expressed in terms

of degrees, where one wavelength at the nominal

operating frequency is equal to 360°.

5.2.3 harmonic frequency — the harmonic frequencies

are defined as integer multiples of the fundamental

frequency. For example, the second harmonic of 13.56

MHz is 27.12 MHz.

5.2.4 load Q — the quality factor, Q, of the load is

defined here as the magnitude of the reactive part of the

load divided by the real part of the load. For example, a

load impedance of 2 – j20 ohms would have a load Q of

10.

5.2.5 matched load — a matched load impedance is

defined as typically having a magnitude of 50  3.3

ohms at a phase angle of up to  3.8°. In other words,

the load is considered matched if the reflection

coefficient is no greater than 0.032 at any phase angle.

5.2.6 matching network — the device used to

transform the impedance of the load (chamber/chuck)

to match the impedance of the generator/cable

assembly, which is typically 50 ohms.

5.2.7 matching network load impedance — the

impedance of the load to which the matching network is

matched.

5.2.8 MTBF

— mean (productive) time between

failures; the average time the equipment performed its

intended function between failures; productive time

divided by the number of failures during that time.

Only productive time is included in this calculation.

5.2.9 power efficiency — the power efficiency of a

matching network is defined as the power exiting the

network (output power) divided by the power entering

the network (input power).

5.2.10 RF applicator/interface — the part of the

chamber where the RF system is terminated. This

interface can either be a chuck (driven electrode) or the

coil/antenna part of a plasma source.

5.2.11 RF system — the RF system is defined as the

combination of the generator, matching network,

chamber interface, and the associated connecting cable

assemblies that are specific to a particular tool/chamber.

5.2.12 tap point — for some systems, partial tuning of

the matching network is achieved by switching in a

combination of fixed tuning elements, such as different

values of capacitors. The tap point is defined as the

position of the switch(es) that connect or disconnect

tuning elements in the matching network circuit.

5.2.13 tuning element position — the position of the

tuning element is defined as the output voltage or

SEMI E113-1104 © SEMI 2001, 2004 2

output encoder value that corresponds to the position of

a variable tuning element in a Matching Network. For

example, the voltage from a rotary potentiometer on the

rotating shaft of a variable capacitor (the “Tuning

Element”) would be referred to as the capacitor’s

“Position”. In this example, the position/voltage

corresponds to a certain shaft location or position.

6 Ordering Information

6.1 Semiconductor manufacturers may use this

standard when procuring processing equipment to

specify RF power delivery system performance and

documentation. The equipment suppliers may also use

this document to specify the RF system components

and subassemblies.

6.2 Orders for equipment in accordance with this

standard shall include:

6.2.1 This specification number and date of issue.

6.2.2 Any certification showing passage of

qualification tests required to be provided (optional).

6.2.3 Any test results required to be included in reports

to be provided (optional).

7 Requirements

7.1 Semiconductor processing equipment shall be

designed and built with a reliable RF power delivery

system. The requirements defined in this specification

address the integrated RF system as well as the

following RF power delivery system components: the

RF cable assemblies, the matching network, the

generator, and the RF applicator/interface, as well as

specific components of these assemblies or systems.

7.2 The mean (productive) time between failures

(MTBF

), as outlined in SEMI E10, of the generator,

matching network, and the RF power delivery system

as a whole shall be provided by the supplier, as well as

the test method used to determine MTBF

7.3 RF Cable Assemblies (Transmission Lines)

7.3.1 Many RF power delivery systems use RF cable

assemblies to transfer power from the generator to the

input of the matching network and, in some cases, from

the output of the matching network to the process

chamber (e.g., the chuck assembly). All cable

assemblies shall adhere to industry standards for cables

and connectors (e.g., MIL-C-17G, MIL-PRF-39012D,

IEEE-STD-383) in terms of rated power/voltage/

current, allowed bending radius, expected variation in

characteristic impedance, and attenuation at the

expected operating frequency(s) for the specific cable

type (e.g., RG-217, RG-218) per the cable

manufacturer’s specifications. SEMI E114 or an

equivalent test method(s) shall be used to determine the

electrical length, power dissipation (loss), and

characteristic impedance of the RF cable assemblies.

7.3.2 The length of the cable assemblies used to

connect portions of the RF power delivery system shall

be specified in terms of electrical length at the nominal

operating frequency, in addition to the nominal physical

length. The electrical length shall be given in terms of

degrees of phase shift. Variations in the dielectric

properties (e.g., phase velocity, characteristic

impedance) of the cable assemblies can cause the

electrical length to differ between assemblies.

7.3.3 The electrical length of cables used between the

matching network and the chamber (if any) shall be

specified to within 0.25° of the standard electrical

length value at the operating frequency for fixed

frequency systems or at the midpoint frequency for

variable frequency systems, for frequencies less than or

equal to 13.56 MHz. For frequencies above 13.56

MHz, the length should be specified to a value (in

degrees) equal to the frequency in MHz multiplied by

0.018 (e.g., the specification for 60 MHz would be

60  0.018 = 1.1°). For example, at 13.56 MHz, the

physical length of typical cable (RG-217)

corresponding to 0.25° of phase shift (0.5° of reflection

coefficient phase shift) would be approximately 1 cm.

This specification would result in impedance variations

seen by the matching network of less than

approximately 1 percent between processing chambers.

7.3.4 The length of cables used between the matching

network and the generator shall be specified to within

1.0° of the standard electrical length value at the

operating frequency for fixed frequency systems or at

the midpoint frequency for variable frequency systems,

for frequencies less than or equal to 13.56 MHz. For

frequencies above 13.56 MHz, the length shall be

specified to a value (in degrees) equal to the frequency

in MHz multiplied by 0.074 (e.g., the specification for

60 MHz would be 60  0.074 = 4.44°). For example, at

13.56 MHz, the physical length of typical cable (RG-

217) corresponding to 1.0° of phase shift (2.0° of

reflection coefficient phase shift) would be

approximately 4 cm. This specification would

minimize the impedance transformation at the harmonic

frequencies (10° of phase shift at the 10

harmonic

frequency).

7.3.5 The expected power dissipation in the cable

assembly(s) supplied with the system shall be provided

as a function of the operating frequency(s) of the

system. The amount of power transmitted through the

cable assembly shall be given in terms of dB (decibels)

and percentage. The relationship between dB and

percentage is given as: