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SEMI E114-0302 E © SEMI 2002 8 Table 1 Example Data Table for Pr esenting the Test Methods Parameters Cable Length Test Instrument Parameters Model Number Bandwidth (Hz) Frequency (MHz) Test Method (1 or 2) Cable Assembl…

SEMI E114-0302

Short Circuit

Termination

Cable Assembly to be tested

Test Port

TDR

NOTE: The cable assembly to be tested (DUT) attaches to the test port and is terminated with a short circuit.

Figure 4

Schematic of the Time Domain Reflectometer (TDR) Test Setup for the Characteristic Impedance

Measurement

Point where impedance

is 45 ohms

Test Data Curve near

short circuit termination

Distance

Impedance

NOTE: The measurement termination point is defined as where the impedance at the short is equal to 0.9 times the nominal

impedance value, which would be 45 ohms for a 50-ohm nominal impedance.

Figure 5

Example Plot of the Characteristic Impedance of a 50-ohm Cable Assembly Near the Short Circuit

Termination

SEMI E114-0302

Table 1 Example Data Table for Presenting the Test Methods Parameters

Cable Length Test

Instrument

Parameters

Model Number

Bandwidth

(Hz)

Frequency (MHz) Test Method

(1 or 2)

Cable Assembly

Length (°)

Power Loss Test

Instrument

Parameters

Model Number

Bandwidth

(Hz)

Frequency (MHz) Loss (dB) Power Transferred (%)

Characteristic Impedance Test

Instrument

Model Number

Normalization

Factor

Minimum

Impedance

Maximum

Impedance

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SEMI E115-0302

TEST METHOD FOR DETERMINING THE LOAD IMPEDANCE AND

EFFICIENCY OF MATCHING NETWORKS USED IN SEMICONDUCTOR

PROCESSING EQUIPMENT RF POWER DELIVERY SYSTEMS

This test method was technically approved by the Global Metrics Committee and is the direct responsibility

of the North American Metrics Committee. Current edition approved by the North American Regional

Standards Committee on March 30, 2002. Initially available at www.semi.org June 2002; to be published

July 2002. Previously published March 2002.

This document was editorially modified in May 2002 to correct an errata. A change was made in Section

1.1.

1 Purpose

1.1 The purpose of this document is to define a test

method used to determine the load impedance and

efficiency of matching networks used in RF power

delivery systems for semiconductor processing

equipment.

2 Scope

2.1 This document specifies the testing procedures and

test equipment required for determining the load

impedance and power efficiency of a matching network

based on the positions of the tuning elements in the

matching network.

2.2 The primary focus for this specification is

semiconductor processing equipment including, but not

limited to, the following tool types:

• Dry etch equipment,

• Film deposition equipment (CVD and PVD).

2.3 This standard does not address any safety or

performance issues related to RF emissions or electrical

codes (e.g., Underwriter’s Laboratory, Inc. (UL), the

National Electrical Code (NEC



), Federal

Communications Commission (FCC)). It is the

responsibility of the users of this standard to conform to

the appropriate local codes and regulations as applied to

this type of equipment, some of which are covered by

referenced documents.

2.4 This standard does not purport to address safety

issues, if any, associated with its use. It is the

responsibility of the users of this standard to establish

appropriate safety and health practices and determine

the applicability of regulatory limitations prior to use.

3 Limitations

3.1 This standard addresses RF Matching Networks

used in RF systems that primarily operate in the

frequency range of 0.2–100 MHz. It does not address

higher frequency RF systems or microwave systems.

3.2 This standard is meant for analyzing matching

networks that are designed to operate at fixed frequency

with a 50-ohm input impedance.

3.3 International, national, and local codes, regulations

and laws should be consulted to ensure that the

equipment and procedures meet regulatory

requirements in each location.

4 Referenced Standards

4.1 SEMI Standards

SEMI E113 — Specification for Semiconductor

Processing Equipment RF Power Delivery Systems

4.2 IEEE Standards

IEEE-STD-383 — IEEE Standard for Type Test of

Class 1E Electrical Cables, Field Splices, and

Connections for Nuclear Power Generating Stations

4.3 Military Standards

MIL-PRF-39012D — General Specification for

Connectors, Coaxial, Radio Frequency

5 Terminology

5.1 Abbreviations and Acronyms

5.1.1 CVD — Chemical Vapor Deposition

5.1.2 PVD — Physical Vapor Deposition

5.1.3 VSWR — Voltage Standing Wave Ratio

5.2 Definitions of Terms

5.2.1 complex conjugate load impedance — the

complex conjugate load impedance has the same real

part of the load impedance and the negative of the

reactive part of the load impedance. For example, the

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