MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第12页

MIL-STD-883F 6 3. ABBREVIATIONS, SYMBOLS, AND DEFINITI ONS 3.1 Abbrevi ations , symbol s, and def initi ons . For t he purpose of this standar d, the abbr eviati ons, s ymbols, and defini tions speci fied i n MIL-PRF-195…

MIL-STD-883F

ASTM E 722 - Standard Practice for Characterizing Neutron Energy Fluence Spectra in Terms of an

equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of

Electronics.

ASTM E 1249 - Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic

Devices.

ASTM E 1250 - Standard Method for Application of Ionization Chambers to Assess the Low Energy

Gamma Component of Cobalt 60 Irradiators Used in Radiation Hardness Testing of

Silicon Electronic Devices.

ASTM E 1275 - Standard Practice for Use of a Radiochromic Film Dosimetry System.

ASTM F 458 - Standard Practice for Nondestructive Pull Testing of Wire Bonds.

ASTM F 459 - Standard Test Methods for Measuring Pull Strength of Microelectronic Wire Bonds.

ASTM F 1892 - Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor

Devices.

ASTM C 177 - Standard Test Method for Steady-State Heat Flux Measurements and Thermal

Transmission Properties by Means of the Guarded Hot-Plate Apparatus.

ASTM C 518 - Standard Test Method for Steady-State Heat Flux Measurements and Thermal

Transmission Properties by Means of the Heat Flow Meter Apparatus.

ASTM D 150 - Standard Test Methods for A-C Loss Characteristics and Permittivity (Dielectric

Constant) of Solid Electrical Insulating Materials.

ASTM D 257 - Standard Test Methods for D-C Resistance or Conductance of Insulating Materials.

ASTM D 1002 - Standard Test Method for Strength Properties of Adhesives in Shear by Tension

Loading (Metal-to-Metal).

ASTM D 3386 - Coefficient of Linear Thermal Expansion of Electrical Insulating Materials, Test Method

for.

ASTM D 3850 - Rapid Thermal Degradation of Solid Electrical Insulating Materials by

Thermogravimetric Method, Test Method for.

(Copies of these documents are available online at http://www.astm.org

or from the American Society for Testing and

Materials, P O Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959)

(Non-Government standards and other publications are normally available from the organizations that prepare or

distribute the documents. These documents also may be available in or through libraries or other informational services.)

2.4 Order of precedence

. In the event of a conflict between the text of this document and the references cited herein, the

text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations

unless a specific exemption has been obtained.

MIL-STD-883F

3. ABBREVIATIONS, SYMBOLS, AND DEFINITIONS

3.1 Abbreviations, symbols, and definitions

. For the purpose of this standard, the abbreviations, symbols, and definitions

specified in MIL-PRF-19500, MIL-PRF-38535, or MIL-HDBK-505 shall apply. The following definitions shall also apply:

3.1.1 Microelectronic device

. A microcircuit, microcircuit module, or an element of a microcircuit as defined in appendix A

of MIL-PRF-38535. For the purposes of this document, each type of microelectronic device shall be identified by a unique

type, or drawing number.

3.1.2 Mode of failure

. The cause for rejection of any failed device or microcircuit as defined in terms of the specific

electrical or physical requirement which it failed to meet (i.e., no failure analysis is required to identify the mode of failure,

which should be obvious from the rejection criteria of the test method).

3.1.3 Mechanism of failure

. The original defect which initiated the microcircuit or device failure or the physical process by

which the degradation proceeded to the point of failure, identifying quality defects, internal, structural, or electrical weakness

and, where applicable, the nature of externally applied stresses which led to failure.

3.1.4 Absolute maximum ratings

. The values specified for ratings, maximum ratings, or absolute maximum ratings are

based on the "absolute system" and are not to be exceeded under any measurable or known service or conditions. In

testing microelectronic devices, limits may be exceeded in determining device performance or lot quality, provided the test

has been determined to be nondestructive and precautions are taken to limit device breakdown and avoid conditions that

could cause permanent degradation. These ratings are limiting values beyond which the serviceability of any individual

microelectronic integrated circuit may be impaired. It follows that a combination of all the absolute maximum ratings cannot

normally be attained simultaneously. Combinations of certain ratings are permissible only if no single maximum rating is

exceeded under any service condition. Unless otherwise specified, the voltage, current, and power ratings are based on

continuous dc power conditions at free air ambient temperature of 25°C ±3°C. For pulsed or other conditions of operation of

a similar nature, the current, voltage, and power dissipation ratings are a function of time and duty cycle. In order not to

exceed absolute ratings, the equipment designer has the responsibility of determining an average design value, for each

rating, below the absolute value of that rating by a safety factor, so that the absolute values will never be exceeded under

any usual conditions of supply-voltage variations, load variations, or manufacturing variations in the equipment itself.

The values specified for "Testing Ratings" (methods 1005, 1008, 1015, 5004, and 5005) are intended to apply only to

short-term, stress-accelerated storage, burn-in, and life tests and shall not be used as basis for equipment design.

MIL-STD-883F

3.1.5 Worst case condition

. Worst case condition(s) consists of the simultaneous application of the most adverse (in

terms of required function of the device) values (within the stated operating ranges) of bias(es), signal input(s), loading and

environment to the device under test. Worst cases for different parameters may be different. If all the applied test

conditions are not established at the most adverse values, the term "partial worst case condition" shall be used to

differentiate and shall be accompanied by identification of the departure from worst case. For example, the lowest values of

supply voltages, signal input levels, and ambient temperature and the highest value of loading may constitute "worst case

conditions" for measurement of the output voltage of a gate. Use of the most adverse values of applied electrical conditions,

at room temperature, would then constitute "partial worst case conditions" and shall be so identified using a postscript "at

room temperature."

3.1.5.1 Accelerated test condition

. Accelerated test conditions are defined as test conditions using one or more applied

stress levels which exceed the maximum rated operating or storage stress levels but are less than or equal to the "Testing

Rating" values.

3.1.6 Static parameters

. Static parameters are defined as dc voltages, dc currents, or ratios of dc voltages or dc

currents, or both.

3.1.7 Dynamic parameters

. Dynamic parameters are defined as those which are rms or time-varying values of voltages

or currents, or ratios of rms or time-varying values of voltages or currents, or both.

3.1.8 Switching parameters

. Switching parameters are defined as those which are associated with the transition of the

output from one level to another or the response to a step input.

3.1.9 Functional tests

. Functional tests are defined as those go, no-go tests which sequentially exercise a function (truth)

table or in which the device is operated as part of an external circuit and total circuit operation is tested.

3.1.10 Acquiring activity

. The acquiring activity is the organizational element of the Government which contracts for

articles, supplies, or services; or it may be a contractor or subcontractor when the organizational element of the Government

has given specific written authorization to such contractor or subcontractor to serve as agent of the acquiring activity. A

contractor or subcontractor serving as agent of the acquiring activity shall not have the authority to grant waivers, deviations,

or exceptions unless specific written authorization to do so has also been given by the Government organization.

3.1.11 Accuracy

. The quality of freedom from error. Accuracy is determined or assured by calibration, or reliance upon

calibrated items.

3.1.12 Calibration

. Comparison of measurement standard or instrument of known accuracy with another standard,

instrument or device to detect, correlate, report or eliminate by adjustment, any variation in the accuracy of the item being

compared. Use of calibrated items provide the basis for value traceability of product technical specifications to national

standard values. Calibration is an activity related to measurement and test equipment performed in accordance with

ANSI/NCSL Z540-1 or equivalent.