MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第124页

MIL-STD-883F METHOD 1019.6 7 March 2003 8 3.13 Test procedur e for Bi polar and BiCMOS l inear or mixed signal c irc uits with agr eed to dose r ates of less than 50 rad(Si )/s . Many bipolar linear parts exhibit ELDRS, …

MIL-STD-883F

METHOD 1019.6

7 March 2003

3.12.2 Accelerated annealing test procedure

. If the device passes the tests in 3.1 through 3.10 or if it passes 3.11 (if that

procedure is used) to the total ionizing dose level specified in the test plan or device specification or drawing and the

exclusions of 3.12.1 do not apply, the accelerated annealing test shall be conducted as follows:

a. Overtest

1. Irradiate each test device to an additional 0.5-times the specified dose using the standard test conditions (3.1

through 3.10). Note that no electrical testing is required at this time.

2. The additional 0.5-times irradiation in 3.12.2.a.1may be omitted if it has been demonstrated via

characterization testing that:

a. none of the circuit propagation delay, output drive, and minimum operating voltage parameters recover

toward their pre-irradiation value greater than experimental accelerated annealing test of 3.12.2.b, and

b. the irradiation biases chosen for irradiation and accelerated annealing tests are worst-case for the

response of these parameters during accelerated annealing.

The characterization testing to establish worst-case irradiation and annealing biases shall be performed at the

specified level. The testing shall at a minimum include separate exposures under static and dynamic

irradiation bias, each followed by worst-case static bias during accelerated annealing according to 3.12.2.b.

b. Accelerated annealing

. Heat each device under worst-case static bias conditions in an environmental chamber

according to one of the following conditions:

1. At 100°C ±5°C for 168 ±12 hours, or

2. At an alternate temperature and time that has been demonstrated via characterization testing to cause equal

or greater change in the parameter(s) of interest, e.g., propagation delay, output drive, and minimum

operating voltage, in each test device as that caused by 3.12.2.b.1, or

3. At an alternate temperature and time which will cause trapped hole annealing of >60% and interface state

annealing of <10% as determined via characterization testing of NMOS test transistors from the same

process. It shall be demonstrated that the radiation response of test transistors represent that of the device

under test.

c. Electrical testing.

Following the accelerated annealing, the electrical test measurements shall be performed as

specified in 3.8 and 3.9.

MIL-STD-883F

METHOD 1019.6

7 March 2003

3.13 Test procedure for Bipolar and BiCMOS linear or mixed signal circuits with agreed to dose rates of less than 50

rad(Si)/s. Many bipolar linear parts exhibit ELDRS, which cannot be simulated with a room temperature 50-300 rad(Si)/s

irradiation plus elevated temperature anneal, such as that used for MOS parts (see ASTM-F1892 for more technical details).

Parts that exhibit ELDRS shall be tested either at the agreed to dose rate, at a prescribed low dose rate to an overtest

radiation level, or with an elevated temperature irradiation test that includes a parameter delta design margin.

Need to perform low dose rate testing

a. The low dose rate tests described in 3.13 may be omitted if:

1. circuits are known not to contain bipolar transistors by design, or

2. circuits are known not to contain any linear circuit functions by design.

3. the device type and IC technology have been demonstrated via characterization testing not to exhibit

ELDRS in device parameters greater than experimental error (or greater than an otherwise specified

upper limit) and the variables that affect ELDRS response are demonstrated to be under control for the

specific vendor processes.

3.13.1 Low dose rate or elevated temperature irradiation test for bipolar or BiCMOS linear or mixed-signal circuits

. All

circuits that do not meet the exception of 3.13.a shall be tested using one of the following test conditions.

Note: The test procedures in paragraphs b. and c. below represent a compromise between the desire for a conservative,

worst-case test and the constraints of test cost, schedule and facilities. For this reason, the test procedures may

result in a non-conservative test for some kinds of circuits.

a. Test at the agreed to dose rate

. Irradiate each test device at the dose rate described in 3.6.3 Condition C using

the standard test conditions (3.1 through 3.10).

b. Test at a prescribed low dose rate

. Irradiate each test device at the close rate described in 3.6.4 Condition D

using the standard test conditions (3.1 through 3.10) with the following additional requirements:

1. If the dose rate is <

10 mrad(Si)/s, an overtest factor of 1.5 shall be applied to the radiation test level, i.e.

the part must pass at a radiation level of 1.5 times the specification dose to be acceptable.

2. If the dose rate is greater than 10 mrad(Si)/s, an overtest factor of 2.0 shall be applied to the radiation

test level, i.e. the part must pass at a radiation level of 2.0 times the specification dose to be acceptable.

c. Test at an elevated temperature

. Irradiate each test device at the dose rate described in 3.6.5 Condition E using

the standard test conditions (3.1 through 3.10) with the following additional requirements:

1. The irradiation temperature shall be 100°C ± 5°C using an irradiation test chamber as described in

paragraph 2.8. Every effort shall be made to minimize the time at temperature.

2. The elevated temperature irradiation test shall only be used for parts with a specification dose of 50

krad(Si) or less.

3. All pre and post irradiation electrical measurements shall be made at a temperature of 24°C ±6°C.

4. A parameter design margin of 3 shall be applied at the specification dose to all critical electrical

parameters in the following manner. The change in each electrical parameter shall be calculated for

each sample at the specification dose. This change in the parameter shall be multiplied by 3 and added

(or subtracted) to the post irradiation parameter value for each sample. This value shall be compared to

the allowable degraded value of the parameter to determine whether the sample passes or fails the test.

MIL-STD-883F

METHOD 1019.6

7 March 2003

3.14 Test report

. As a minimum, the report shall include the device type number, serial number, the manufacturer,

package type, controlling specification, date code, and any other identifying numbers given by the manufacturer. The bias

circuit, parameter measurement circuits, the layout of the test apparatus with details of distances and materials used, and

electrical noise and current leakage of the electrical measurement system for in-flux testing shall be reported using drawings

or diagrams as appropriate. Each data sheet shall include the test date, the radiation source used, the bias conditions

during irradiation, the ambient temperature around the devices during irradiation and electrical testing, the duration of each

irradiation, the time between irradiation and the start of the electrical measurements, the duration of the electrical

measurements and the time to the next irradiation when step irradiations are used, the irradiation dose rate, electrical test

conditions, dosimetry system and procedures and the radiation test levels. The pre- and post-irradiation data shall be

recorded for each part and retained with the parent population data in accordance with the requirements of MIL-PRF-38535

or MIL-PRF-38534. Any anomalous incidents during the test shall be fully documented and reported. The accelerated

annealing procedure, if used, shall be described. Any other radiation test procedures or test data required for the delivery

shall be specified in the device specification, drawing or purchase order.

4. SUMMARY

. The following details shall be specified in the applicable acquisition document as required:

a. Device-type number(s), quantity, and governing specifications (see 3.1).

b. Radiation dosimetry requirements (see 3.3).

c. Radiation test levels including dose and dose rate (see 3.5 and 3.6).

d. Irradiation, electrical test and transport temperatures if other than as specified in 3.7.

e. Electrical parameters to be measured and device operating conditions during measurement (see 3.8).

f. Test conditions, i.e., in-flux or not-in-flux type tests (see 3.9).

g. Bias conditions for devices during irradiation (see 3.9.3).

h. Time intervals of the post-irradiation measurements (see 3.10).

i. Requirement for extended room temperature anneal test, if required (see 3.11).

j. Requirement for accelerated annealing test, if required (see 3.12).

k. Documentation required to be delivered with devices (see 3.14).