MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第153页

MIL-STD-883F METHOD 1023.2 19 August 1994 5 3.7 Dose Rat e Test Sequenc e . 3.7.1 Facility Pr eparation . The radi ation s ource s hall be adjus ted to oper ate in t he speci fied mode and pr ovide a radi ation pulse wi …

MIL-STD-883F

METHOD 1023.2

19 August 1994

3.2 Radiation safety

. All personnel shall adhere to the health and safety requirements established by the local radiation

safety officer or health physicist.

3.3 Stress limits.

3.3.1 Total ionizing dose limit

. Unless otherwise specified, any device exposed to more than 10% of its total ionizing

dose limit shall be considered to have been destructively tested. The total dose limit shall be determined (or data obtained)

for each device type to be tested. The total ionizing dose limit shall be specified in the test plan.

3.3.2 Burnout Limit.

A device exposed to greater than 10% of the level at which photocurrent burnout occurs shall be

considered destructively tested. The burnout level shall be specified in the test plan/procedure. The burnout level may be

specified as the maximum dose rate level at which the device type has been tested and does not burnout. Note that dose

rate testing causes surge currents ranging from 20 ns to 500 ns (typically) in duration, which may exceed the manufacturers'

maximum ratings for current and power for that time period.

3.4 Characterization testing

. Characterization tests shall be performed or data obtained to determine device performance

as a function of dose rate and to establish requirements for production testing, if applicable. The following are examples of

information gained from characterization testing:

a. Parameter behavior over dose rate and pulse width.

b. Upset threshold as a function of radiation dose rate and pulse width.

c. Determination of susceptible circuit conditions.

d. Identification of the most susceptible circuits of a device, and the appropriate outputs to monitor.

e. Effect of temperature on upset or failure.

f. Upset, recovery time and failure criteria to be specified in the device specification or drawing.

g. Group A electrical parameter degradation subsequent to dose rate testing.

h. Worst case power supply voltage.

i. Maximum surge currents and duration, and photocurrent burnout level.

3.5 Production testing

. Prior to production testing, characterization testing shall be performed or characterization data

obtained for each device type. The results of the characterization tests (paragraph 3.4), or the existing data, will be used to

develop the requirements for the production tests. These requirements are specified in the applicable test plan or procedure

and include those items listed in paragraph 1.2.

3.5.1 General requirements for production tests.

Production tests shall be performed at the specified dose rates (and

pulse widths), with bias and load conditions as specified in the test plan or procedure. The measured response shall be

compared to the upset criteria and determination of pass/fail shall be made. Devices having storage elements shall be

loaded with the applicable test pattern prior to exposure and post-exposure functional test shall be performed to the extent

necessary to verify the stored pattern.

3.6 Testing of Complex Linear Devices

. Testing of complex linear devices, such as analog to digital and digital to

analog converters, shall be performed using the necessary (as specified in the test plan or procedure) exposure conditions

to ensure adequate coverage. Often, four or more exposure conditions are required. To the greatest extent practical, the

most susceptible exposure conditions (i.e., most favorable for upset to occur) shall be used. For linear devices that have

storage elements, each exposure state shall consist of a stored test pattern plus the external bias. Each test pattern shall

be loaded prior to exposure, and following the application of the radiation pulse, functional testing of the device must be

performed to the extent necessary to verify the pattern.

MIL-STD-883F

METHOD 1023.2

19 August 1994

3.7 Dose Rate Test Sequence

3.7.1 Facility Preparation

. The radiation source shall be adjusted to operate in the specified mode and provide a radiation

pulse within the specified pulse width range. The required dosimeters shall be installed as close as practical to the DUT.

3.7.2 Test Circuit preparation

. The dose rate test system, including all test circuitry, cables, monitoring and recording

equipment shall be assembled to provide the specified bias and load conditions and output monitoring. The test circuit shall

be placed in position such that the DUT will receive the specified dose. Unless otherwise specified, dose rate testing shall

be performed at 25° +

5°C. (The test temperature shall be specified in the test plan/procedure.)

3.7.3 Test circuit noise check

. With all circuitry connected, a noise check, including radiation induced noise, shall be

made. Noise signals shall be kept as low as practicable. The circuitry and cabling system shall be modified until the noise

signals are below an acceptable level (usually less than 10% of the expected response).

3.7.4 Test Procedure

CAUTION: Exercise caution when handling devices, particularly with regard to pin alignment in the and holding fixture

and when installing devices in the test circuit. Ensure that voltages are off before inserting the DUT. Observe ESD

handling procedures for the class of devices being tested, as appropriate.

Step 1: Adjust timing control system to provide the required time interval between radiation pulse and

post-irradiation measurements.

Step 2: Remove bias voltages and install a control sample device (same type as devices to be tested).

Step 3: Turn on bias voltages and verify proper device function in accordance with performance

requirements.

Step 4. Verify proper operation of all recording, monitoring and timing control equipment. Monitor and

record noise level and temperature.

Step 5. Remove bias voltages and control device, in that order.

Adjust the radiation source to operate in the specified mode to deliver the specified dose. Verify as follows:

Step 6: Put dosimetry in position and expose to radiation pulse. Verify that the dose recording

equipment is working properly and that the appropriate dose was delivered.

When the dose rate test system, radiation source and dosimetry system have been verified to be working properly, continue

as follows for each device type to be tested:

Step 7: Ensure bias is removed from the test circuit and install DUT.

Step 8: Bias the device and load the test patterns (if applicable) in accordance with the test plan or

procedure. Verify proper device functional operation.

Step 9: Expose the DUT to the radiation pulse and measure the response of the specified outputs, as

well as the recovery characteristics.

Step 10: Compare the DUT response to upset criteria, if applicable.

Repeat steps 8-10 for each exposure state and for each radiation dose rate.

Step 11: Remove bias and DUT in that order.

Note that the upset threshold shall be reported as the maximum dose rate at which the DUT does not upset.

MIL-STD-883F

METHOD 1023.2

19 August 1994

4. Test Report

. A dose rate test report shall be prepared and shall include the following (as a minimum):

a. Device identification, including manufacturer, wafer lot and/or inspection lot traceability information, pre-radiation

history (e.g., class level S, class level B, prototype, etc).

b. Radiation test facility, type of source, pulse width, dosimetry data including pulse waveform.

c. Test date, test operator's name and organization.

d. Results of the noise test.

e. Device response data, listed by device serial number, including output and supply recovery waveforms, and dose

per pulse for each device.

f. Power supply droop during pulse.

g. Post-exposure functional test data if applicable.

h. All information included in the test plan/procedure (may be referenced or appended to test report), and any

deviations from the approved test plan/procedure.

i. Package material and thickness, and effect of package material on dose to the device (see paragraph 2.2).

5. SUMMARY

. The applicable device specification or drawing shall specify the following (as applicable):

a. Device types and quantities to be tested.

b. Traceability (device number, wafer/lot number, etc.) requirements and requirements for data reporting and

submission.

c. Electrical configuration of the DUT during exposure (include schematic of exposure configuration).

d. Sequence of exposure conditions and logical test patterns.

e. Outputs to be monitored and recorded.

f. Dose rate level(s) and pulse width(s).

g. Criteria for upset and recovery, steady state value of recovered outputs and/or supply current. Include sample

waveforms if necessary.

h. Upset threshold and failure level (if applicable).

i. Post exposure functional test necessary to verify the stored pattern, and maximum time interval between

application of the radiation pulse and start of functional test.

j. Total ionizing dose limit and burnout level for each device type.

k. Maximum current limiting resistance in series with the power supply in the application (if applicable), and

allowable resistance in the test circuit (paragraph 2.3.5).

l. Requirements for Group A electrical testing pre- and post-radiation testing, if applicable.

m. Test instrument requirements, if other than those indicated above.

n. Requirements for characterization, recharacterization and analysis.