MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第182页
MIL-STD-883F MET HOD 2001.2 31 August 1977 2 This page i ntenti onally lef t blank
MIL-STD-883F
METHOD 2001.2
31 August 1977
1
METHOD 2001.2
CONSTANT ACCELERATION
1. PURPOSE
. This test is used to determine the effects of constant acceleration on microelectronic devices. It is an
accelerated test designed to indicate types of structural and mechanical weaknesses not necessarily detected in shock and
vibration tests. It may be used as a high stress test to determine the mechanical limits of the package, internal metallization
and lead system, die or substrate attachment, and other elements of the microelectronic device. By establishing proper
stress levels, it may also be employed as an in-line 100 percent screen to detect and eliminate devices with lower than
nominal mechanical strengths in any of the structural elements.
2. APPARATUS
. Constant acceleration tests shall be made on an apparatus capable of applying the specified
acceleration for the required time.
3. PROCEDURE
. The device shall be restrained by its case, or by normal mountings, and the leads or cables secured.
Unless otherwise specified, a constant acceleration of the value specified shall then be applied to the device for 1 minute in
each of the orientations X
1
, X
2
, Y
2
, Y
1
, Z
1
, and Z
2
. For devices with internal elements mounted with the major seating plane
perpendicular to the Y axis, the Y
1
orientation shall be defined as that one in which the element tends to be removed from its
mount. Unless otherwise specified, test condition E shall apply.
Test condition
Stress level (g)
A 5,000
B 10,000
C 15,000
D 20,000
E 30,000
F 50,000
G 75,000
H 100,000
J 125,000
4. SUMMARY
. The following details shall be specified in the applicable acquisition document:
a. Amount of acceleration to be applied, in gravity units (g) if other than test condition E (see 3).
b. When required, measurements to be made after test.
c. Any variations in duration or limitations to orientation (e.g., Y
1
only) (see 3).
d. Sequence of orientations, if other than as specified (see 3).
MIL-STD-883F
METHOD 2001.2
31 August 1977
2
This page intentionally left blank
MIL-STD-883F
METHOD 2002.4
24 August 1998
1
METHOD 2002.4
MECHANICAL SHOCK
1. PURPOSE
. The shock test is intended to determine the suitability of the devices for use in electronic equipment which
may be subjected to moderately severe shocks as a result of suddenly applied forces or abrupt changes in motion produced
by rough handling, transportation, or field operation. Shocks of this type may disturb operating characteristics or cause
damage similar to that resulting from excessive vibration, particularly if the shock pulses are repetitive.
2. APPARATUS
. The shock-testing apparatus shall be capable of providing shock pulses of 500 to 30,000 g (peak) as
specified with a pulse duration between 0.1 and 1.0 millisecond, to the body of the device. The acceleration pulse shall be a
half-sine waveform with an allowable distortion not greater than ±20 percent of the specified peak acceleration, and shall be
measured by a transducer and optional electronic filter with a cut-off frequency of at least 5 times the fundamental frequency
of the shock pulse. The pulse duration shall be measured between the points at 10 percent of the peak acceleration during
rise time and at 10 percent of the peak acceleration during decay time. Absolute tolerances of the pulse duration shall be
the greater of ±0.1 millisecond or ±30 percent of the specified duration.
3. PROCEDURE
. The shock-testing apparatus shall be mounted on a sturdy laboratory table or equivalent base and
leveled before use. The device shall be rigidly mounted or restrained by its case with suitable protection for the leads.
Means may be provided to prevent the shock from being repeated due to "bounce" in the apparatus. Unless otherwise
specified, the device shall be subject to 5 shock pulses of the peak (g) level specified in the selected test condition and for
the pulse duration specified in each of the orientations X
1
, X
2
, Y
2
, Y
1
, Z
1
, and Z
2
. For devices with internal elements
mounted with the major plane perpendicular to the Y axis, the Y
1
orientation shall be defined as that one in which the
element tends to be removed from its mount. Unless otherwise specified, test condition B shall apply.
Test condition
g level (peak) Duration of pulse (ms)
A 500 1.0
B 1,500 0.5
C 3,000 0.3
D 5,000 0.3
E 10,000 0.2
F 20,000 0.2
G 30,000 0.12
CAUTIION: If this test is performed using a potting compound type test fixture (e.g., waterglass/sodium silicate) the
facility performing the test shall assure that this procedure/material does not mask fine/gross leakers.
3.1 Examination
. After completion of the test, an external visual examination of the marking shall be performed without
magnification or with a viewer having a magnification no greater than 3X and a visual examination of the case, leads, or
seals shall be performed at a magnification between 10X and 20X. This examination and any additional specified
measurements and examination shall be made after completion of the final cycle or upon completion of a group, sequence,
or subgroup of tests which include this test.
3.2 Failure criteria
. After subjection to the test, failure of any specified measurements or examination (see 3 and 4),
evidence of defects or damage to the case, leads, or seals, or illegible markings shall be considered a failure. Damage to
marking caused by fixturing or handling during tests shall not be cause for device rejection.
4. SUMMARY
. The following details shall be specified in the applicable acquisition document:
a. Test condition, if other than test condition B (see 3).
b. Number and direction of shock pulses, if other than specified (see 3).
c. Electrical-load conditions, if applicable (see 3).
d. When required, measurement made after test (see 3 and 3.1).
e. When required, measurement during test.