MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第19页
MIL-STD-883F 13 4.5.4 El ectr ical test frequenc y . Unles s other wise s pecif ied, t he elect ric al tes t fr equency shal l be the s pecif ied operat ing frequenc y. W her e a frequenc y range is spec ified, major fun…
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4.5 Test conditions
. All newly designed device types shall meet the test conditions specified in 4.5.1 through 4.5.3.2.
4.5.1 Calibration requirements
. Calibration shall be applied to those items of measuring and test equipment used to
assure product delivery specifications or critical manufacturing elements. Calibration shall be performed in accordance with
the requirements of ANSI/NCSL Z540-1 or equivalent. Calibrated items shall be controlled, used and stored in a manner
suitable to protect calibration integrity. Test equipment requiring calibration (single items or assemblages) shall be identified
and labeled in accordance with ANSI/NCSL Z540-1 or equivalent.
4.5.2 Electrical test equipment accuracy
. Unless otherwise specified in the acquisition document, test conditions such
as: voltage, resistive loads, capacitive loads, input switching parameters, input static parameters, currents and others shall
be set to nominal values as defined in the acquisition document, with tolerances suitable for the test in which they are used.
4.5.3 Electrical test equipment capability
. Using any or all of the following techniques, the manufacturer shall determine
that the test set/system is suitable to ensure product conformance with the acquisition document. Alternate suitable
techniques may be used when approved by the qualifying activity. The manufacturer shall define and document methods
used. The test equipment accuracy should be better than the allowable device tolerance in accordance with the following
ratios:
a. Greater than or equal to 10:1 for routine processes.
b. Greater than or equal to 4:1 for special processes (commercial equipment not readily available).
NOTE: State of the art requirements in which 4:1 can not be effectively achieved due to a lack of national standards shall
be justified and documented.
4.5.3.1 Control based on uncertainty
. Test processes that have complex characteristics are best performed and
controlled by the application of uncertainty analysis. The overall uncertainty in a test or measurement process shall be
determined and the impact of said uncertainty on the product parameter tolerance shall be taken into account. The methods
used for determining uncertainty shall be defined and documented. The method selected may use any (or combinations) of
the following forms:
a. Arithmetic addition (linear), normally produces an overly conservative estimate and reflects a highly improbable
situation in which contributing errors are at their maximum limit at the same time and same direction.
b. Root Sum Square (RSS), normally applied where the errors tend to fit a normal distribution (gaussian) and are from
independent sources.
c. Partial Derivatives, used where complex relationships exist.
d. Monte Carlo Simulation, used in very complex situations where other methods are not easily applied or do not fit.
e. SRM (or controlled correlation device) testing providing observable data.
NOTE: Observable data, from a controlled device, may be relied upon to provide feedback that confirms process
performance is within statistical limits.
f. Analysis of systematic and random errors, applying corrections as applicable.
g. Any other recognized method of combining errors into an expression of uncertainty substantiated by an engineering
analysis.
4.5.3.2 Use and control of correlation devices/SRM's
. When a manufacturer elects to use correlation devices or SRM's,
methods of use and control shall be in place and documented including parameters, type, quantity, description,
identification, storage, handling and periodic verification requirements.
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4.5.4 Electrical test frequency
. Unless otherwise specified, the electrical test frequency shall be the specified operating
frequency. Where a frequency range is specified, major functional parameters shall be tested at the maximum and
minimum frequencies of the range in addition to those tests conducted at any specified frequency within the range.
Whenever electrical tests are conducted on microelectronic devices for which a range of frequencies or more than a single
operating frequency is specified, the frequency at which tests are conducted shall be recorded along with the parameters
measured at those frequencies.
4.5.5 Testing of multiple input/output devices
. Where any input or output parameter is specified for devices having more
than a single input or output, the specified parameter shall be tested at all input or output terminations of the device.
4.5.6 Testing of complex devices
. Where microelectronic devices being tested contain multiple circuits or functions,
whether independently connected to the external device leads or whether internally connected in some arrangement to
minimize the number of external leads, suitable test circuits and procedures shall be applied so as to test all circuits or
functions contained in the device with all the applicable test methods specified in the applicable acquisition document. For
example, if a device contains a pair of logic gates it shall not be acceptable to test only one of the gates for the specified
parameters. Furthermore, multiple circuit devices should be tested to assure that no significant interaction exists between
individual circuits (e.g., application of signal to one gate of a dual gate device should not cause a change in output of the
other gate). The intent of this requirement is to assure that all circuit elements in a microelectronic device are exercised to
the fullest extent allowed by their construction and connection provisions. For circuit arrays containing complex signal paths
which vary depending on the nature of incoming signals or internal functions performed on the incoming signals, this
requirement shall be met by programming the operation of the device to assure that all circuit elements are caused to
function and thus provide the opportunity to observe or measure the levels of their performance in accordance with the
specified test methods.
4.5.7 Test environment
. Unless otherwise specified herein, or in the applicable acquisition documentation, all
measurements and tests shall be made at ambient temperature of 25°C +3°C, -5°C and at ambient atmospheric pressure
from 580 to 800 millimeters mercury.
4.5.8 Permissible temperature variation in environmental chambers
. When chambers are used, specimens under test
shall be located only within the working area defined as follows:
a. Temperature variation within working area: The controls for the chamber shall be capable of maintaining the
temperature of any single reference point within the working area within ±2°C or ±4 percent, whichever is greater.
b. Space variation within working area: Chambers shall be so constructed that at any given time, the temperature of any
point within the working area shall not deviate more than ±3°C or ±3 percent, whichever is greater, from the reference
point, except for the immediate vicinity of specimens generating heat.
c. Chambers with specified minimum temperatures (e.g., burn-in, life test, etc.): When test requirements involve a
specified minimum test temperature, the controls and chamber construction shall be such that the temperature of any
point within the working area shall not deviate more than +8°C, -0°C; or +8, -0 percent, whichever is greater, from the
specified minimum temperature.
4.5.9 Control of test temperature during electrical measurements
. Unless otherwise specified, the specified test
temperature, case (T
C
), ambient (T
A
), or junction (T
J
) shall be controlled by the applicable procedure(s) specified herein.
These are exclusively for the control of chambers, handlers, etc., used in electrical measurements of devices at specified
temperatures and the provisions of 4.5.8 do not apply. Testing shall be conducted using either power-off condition followed
by low duty cycle pulse testing or power stable temperature condition.
4.5.9.1 Temperature control during testing for T
C
, T
A
, or T
J
above 25°C. Unless otherwise specified, the device (including
its internal elements; e.g., die, capacitors, resistors, etc.) shall reach temperature and be stabilized in the power-off
condition to within ±3 °C (or +6 -3 °C for hybrids) of the specified temperature. Note: Hybrids may exceed the positive
tolerance of +6 °C if their construction dictates and providing the manufacturer can assure that the devices under test are
not degraded. When an established temperature characterization profile is available for a device to be tested, this profile
may be used in lieu of temperature measurements to determine the proper heat soak conditions for meeting this
requirement. When using a temperature characterization profile, test apparatus monitoring will assure that the controls are
providing the proper test environment for that profile. After stabilization, testing shall be performed and the T
C
, T
A
, or T
J
controlled to not fall more than 3 °C from the specified temperature. The temperature during test may exceed 3°C of the
specified T
C
, T
A
, or T
J
provided the manufacturer assures that the devices under test are not being degraded. The electrical
test parameters shall be measured using low duty cycle pulse testing or, if specified, power stable conditions (see 4.5.9.4).
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4.5.9.2 Temperature control during testing for T
C
, T
A
, or T
J
below 25°C. Unless otherwise specified, the device (including
its internal elements; e.g., die, capacitors, resistors, etc.) shall reach temperature and be stabilized in the power-off
condition to within +
3 °C (or –6 +3 °C for hybrids) of the specified temperature (see note below). Note: Hybrids may exceed
the negative tolerance of -6 °C if their construction dictates and providing the manufacturer can assure that the devices
under test are not degraded. When an established temperature characterization profile is available for a device to be tested,
this profile may be used in lieu of temperature measurements to determine the proper heat soak conditions for meeting this
requirement. When using a temperature characterization profile, test apparatus monitoring will assure that the controls are
providing the proper test environment for that profile. After stabilization, (this temperature shall be identified as the cold-start
temperature) testing shall be performed and the T
C
, T
A
, or T
J
controlled to not exceed +5 °C of the specified temperature
throughout the test duration. The electrical test parameters shall be measured using low duty cycle pulse testing or, if
specified, power stable conditions (see 4.5.9.4). When applicable, the detail specification shall specify those parameters or
sequence of tests most sensitive to the cold-start temperature. These parameters, when specified, shall be measured at the
start of the test sequence and shall be completed as soon as possible or within a specified time.
NOTE: Unless otherwise specified in the applicable detail specification, the set temperature shall be -55°C (T
C
, T
A
, or T
J
,
as applicable) or colder if the device temperature (T
C
, T
A
, or T
J
, as applicable) increases by more than +5°C during
the test duration.
4.5.9.3 Temperature control during testing for T
C
, T
A
, or T
J
at 25°C. Unless otherwise specified, the device (including its
internal elements; e.g., die, capacitors, resistors, etc.) shall be stabilized in the power-off condition until the temperature is
25°C +3°C, -5°C. The electrical test parameters shall be measured using low duty pulse testing or, if specified, power stable
conditions (see 4.5.9.4).
4.5.9.4 Power stable temperature condition
. When specified, the device shall be stabilized in the specified steady-state
power-on condition at the specified test temperature, T
A
, T
C
, or T
J
as applicable, for temperatures at, above, or below 25°C
for a minimum time period of 5 minutes or a specified time. The electrical parameters measurements shall be completed as
soon as possible or within a specified period of time after temperature/power stabilization has occurred. Alternatively, when
specified, the device temperature T
C
or T
A
may be stabilized within ±3°C of the junction temperature typically predicted for
the specified steady-state power-on condition of 5 minutes or more and the testing conducted with low duty pulse
techniques.
4.6 General precautions
. The following precautions shall be observed in the testing of devices:
4.6.1 Transients
. Devices shall not be subjected to conditions in which voltage or current transients cause the ratings to
be exceeded.
4.6.2 Order of connection of leads
. Care should be taken when connecting a microelectronic device to a power source.
For MOS devices or other microelectronic circuits or devices where the order of connection of leads may be important,
precautions cited in the applicable acquisition document shall be observed.
4.6.3 Soldering and welding
. Adequate precautions shall be taken to avoid damage to the device during soldering or
welding required for tests.
4.6.4 Radiation precautions
. Due precautions shall be used in storing or testing microelectronic devices in substantial
fields of x-rays, neutrons, or other energy particles.
4.6.5 Handling precautions for microelectronic devices
.
a. Ground all equipment prior to insertion of the device for electrical test.
b. Where applicable, keep devices in metal shields until they are inserted in the equipment or until necessary to
remove for test.
c. Where applicable, keep devices in carriers or other protective packages during test.
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