MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第197页

MIL-STD-883F METHOD 2006.1 31 August 1977 1 METHOD 2006.1 VIBRATION NOISE 1. PURPOSE . The purpos e of thi s tes t is to measur e the amount of elect ric al nois e produced by t he device under vibrat ion. 2. APPARATUS .…

MIL-STD-883F

METHOD 2005.2

15 August 1984

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MIL-STD-883F

METHOD 2006.1

31 August 1977

METHOD 2006.1

VIBRATION NOISE

1. PURPOSE

. The purpose of this test is to measure the amount of electrical noise produced by the device under

vibration.

2. APPARATUS

. Apparatus for this test shall include equipment capable of providing the required variable frequency

vibration at the specified levels, a calibrated high impedance voltmeter for noise measurement during test and the necessary

optical and electronic equipment for post-test measurements.

3. PROCEDURE

. The device and its leads shall be rigidly fastened on the vibration platform and the leads or cables

adequately secured. The device shall be vibrated with simple harmonic motion having either an amplitude of 0.06 inch

double amplitude (maximum total excursion) or a constant peak acceleration of 20 g minimum. The vibration frequency shall

be varied approximately logarithmically between 20 and 2,000 Hz. The entire frequency range shall be traversed in not less

than 4 minutes for each cycle. This cycle shall be performed once in each of the orientations X, Y, and Z (total of 3 times),

so that the motion shall be applied for a total period of approximately 12 minutes. The specified voltages and currents shall

be applied in the test circuit. The maximum noise-output voltage across the specified load resistance during traverse, shall

be measured with an average-responding root-mean-square (rms) calibrated high impedance voltmeter. The meter shall

measure, with an error of not more than 3 percent, the rms value of a sine-wave voltage at 2,000 Hz. The characteristic of

the meter over a bandwidth of 20 to 2,000 Hz shall be ±1 decibel (dB) of the value at 2,000 Hz, with an attenuation rate

below 20 and above 20,000 Hz of 6 ±2 dB per octave. The maximum inherent noise in the circuit shall be at least 10 dB

below the specified noise-output voltage. When specified, devices with an internal cavity containing parts or elements

subject to possible movement or breakage during vibration shall be further examined by radiographic examination in

accordance with method 2012 or by delidding or opening and internal visual examination at 30X magnification to reveal

damage or dislocation. Where this test is performed as part of a group or subgroup of tests, the post-test measurements or

inspections need not be performed specifically at the conclusion of this test, but may be performed once at the conclusion of

the group or subgroup.

3.1 Examination

. After completion of the test, an external visual examination of the marking shall be performed without

magnification or with a viewer having a magnification no greater than 3X and a visual examination of the case, leads, or

seals shall be performed at a magnification between 10X and 20X. This examination and any additional specified

measurements and examination shall be made after completion of the final cycle or upon completion of a group, sequence,

or subgroup of tests which include this test.

3.2 Failure criteria

. After subjection to the test, failure of any specified measurement or examination (see 3 and 4),

evidence of defects or damage to the case, leads, or seals, or illegible markings shall be considered a failure. Damage to

marking caused by fixturing or handling during tests shall not be cause for device rejection.

4. SUMMARY

. The following details shall be specified in the applicable acquisition document:

a. Test condition (see 3).

b. Test voltages and currents (see 3). Unless otherwise specified, these shall be the nominal operating voltages and

currents for the device.

c. Load resistance (see 3). Unless otherwise specified, this shall be the maximum rated operating load of the

device.

d. Measurements after test (see 3 and 3.1).

e. Noise-output voltage limit (see 3).

MIL-STD-883F

METHOD 2006.1

31 August 1977

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