MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第230页
MIL-STD-883F METHOD 2010.11 18 June 2004 20 Condition A Conditi on B Class le vel S Class lev el B FIGURE 2010-17. MOS gate alignment . h. For MOS str uctur es c ontaining a di ffus ed guard ri ng, gate met allizat ion n…
MIL-STD-883F
METHOD 2010.11
18 June 2004
19
FIGURE 2010-17A. Class level S and Class level B coupling (air) bridge criteria
.
MIL-STD-883F
METHOD 2010.11
18 June 2004
20
Condition A Condition B
Class level S Class level B
FIGURE 2010-17. MOS gate alignment
.
h. For MOS structures containing a diffused guard ring, gate metallization not coincident with or not extending over
the diffused guard ring (see figure 2010-18).
FIGURE 2010-18. MOS gate alignment
.
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MIL-STD-883F
METHOD 2010.11
18 June 2004
21
Condition A Condition B
Class level S Class level B
3.1.2 Diffusion and passivation layer faults
. No devices shall be acceptable that exhibits the following:
3.1.2.1 Diffusion faults
.
a. Diffusion fault that allows bridging between diffused areas (see figure 2010-19).
FIGURE 2010-19. Diffusion faults
.
b. Any isolation diffusion that is discontinuous (except isolation walls around unused areas or unused bonding pads)
or any other diffused area with less than 25 percent (50 percent for resistors) of the original diffusion width
remaining (see figure 2010-20).
FIGURE 2010-20. Diffusion faults
.