MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第243页
MIL-STD-883F METHOD 2010.11 18 June 2004 33 FIGURE 2010-31. Scrat ch, void and t rim c rit eria f or res ist ors . * *
MIL-STD-883F
METHOD 2010.11
18 June 2004
32
Condition A Condition B
Class level S Class level B
Rectangular L trim
FIGURE 2010-30. Resistor Criteria
- Continued.
d. Resistor width that has been reduced by trimming to less than one-half the narrowest resistor width, including
voids, scratches, or a combination thereof, in the trim area (see figure 2010-31).
NOTE: Trimming of more than 50 percent of a given resistor shunt link is acceptable by design providing that the last
shunt link of the resistor adder network is not trimmed greater than 50 percent. All trimmable resistor shunt
links shall be defined on the design layout drawing.
*
*
MIL-STD-883F
METHOD 2010.11
18 June 2004
33
FIGURE 2010-31. Scratch, void and trim criteria for resistors
.
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*
MIL-STD-883F
METHOD 2010.11
18 June 2004
34
Condition A Condition B
Class level S Class level B
e. Trim path into the metallization except block resistors.
NOTE: This criteria can be excluded for trim paths into terminator ends of metallization runs. Conductors or resistors
may be trimmed open for link trims or by design.
f. Trim for block resistors which extends into the metallization (excluding bonding pads) more than 25 percent of the
original metal width (see figure 2010-32).
FIGURE 2010-32. Block resistor criteria
.
g. Pits into the silicon dioxide in the kerf which do not exhibit a line of separation between the pit and the resistor
material.