MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第277页
MIL-STD-883F METHOD 2012.7 1 June 1993 11 NOTE: Angle A s hall be great er than 45 ° . FIGURE 2012-4 Under cutti ng . FIGURE 2012-5. Clearanc e in dual-i n-li ne or fl at pack type devic e .
MIL-STD-883F
METHOD 2012.7
1 June 1993
10
3.11 Examination and acceptance criteria for hybrid devices.
3.11.1 Device construction
. Acceptable devices shall be of the specified design and construction with regard to the
characteristics discernible through radiographic examination. Devices that deviate significantly from the specified
construction shall be rejected.
3.11.2 Individual device defects
. The individual device examination shall include, but not be limited to, extraneous
matter, location and orientation of elements, cracks in the substrate that exceed 0.127 mm (0.005 inch) in length or point
toward active metallization, adhesive build-up, solder splashes, placement of wires, voids in the lid seal (this may not
apply to power hybrid devices), and improper wetting between the substrate(s) and the package. Any device for which
the radiograph reveals any of the following defects shall be rejected:
3.11.2.1 Presence of extraneous matter (foreign particles)
.
a. Unattached foreign material greater than 0.025 mm (0.001 inch), or of any lesser size which is sufficient to bridge
metallization or nonconnected conducting elements, that appears to be on the surface of the die, component,
substrate, or within the package.
b. Attached foreign material that bridges metallization paths, package leads, lead to package metallization, functional
circuit elements, junctions, or any combination thereof.
NOTE: Attached or unattached material may be verified by comparing two identical views with a mild mechanical
shock, such as PIND test, between the two views.
c. Wire tails or extra wires which make contact with any metallization not connected to the wire, or which exceed four
wire diameters in length at the substrate pad or package post, or two wire diameters at the top of a die or
component.
d. Any evidence of solder, alloy, or conductive adhesive that appears to bridge noncommon metallization (i.e., wire(s),
bonding post, active metallization or any combination thereof) not intended by design.
e. Gold flaking on the bonding post or anywhere inside the case.
3.11.2.2 Unacceptable construction
.
a. voids in substrate or component attachment medium.
(1) Contact area voids in excess of one-half of the total contact area.
(2) A single void which traverses either the length or width of the substrate or semiconductor element
and whose area exceeds 10 percent of the total intended contact area.
NOTE: To obtain, and/or verify substrate attachment the use of a thermal resistance analyzer, which
measures the thermal characteristics (heat dissipation), is strongly recommended.
b. Wires present, other than those connecting specific areas as per the drawing, except wires designated as tuning
devices on the bonding diagram, and except where bond-offs are allowed.
c. Improper component placement.
d. Cracks, splits, or chips in the component or substrate which enter the active circuit area.
MIL-STD-883F
METHOD 2012.7
1 June 1993
11
NOTE: Angle A shall be greater than 45°.
FIGURE 2012-4 Undercutting
.
FIGURE 2012-5. Clearance in dual-in-line or flat pack type device
.
MIL-STD-883F
METHOD 2012.7
1 June 1993
12
e. Voids in the lid seal in which the seal is not continuous or is reduced from its design sealing width by more than 75
percent.
NOTE: Sealing voids may not be detectable within power hybrid packages.
f. Inadequate clearance.
(1) Any wire that comes closer than 0.025 mm (0.001 inch) to another wire (excluding common wires)
within a spherical radial distance from the bond perimeter of 0.127 mm (0.005 inch) for ball bonds,
or 0.254 mm (0.010 inch) for ultrasonic and thermocompression wedge bonds.
NOTE: Insulated wires defined in the device specification/drawing are excluded from this criteria.
(2) Excessive loop or sag in any wire so that it comes closer than two wire diameters to another wire,
package post, unglassivated operating metallization, die, or portion of a package after a spherical
radial distance from the bond perimeter of 0.127 mm (0.005 inch) for ball bonds or 0.254 mm (0.010
inch) for ultrasonic and thermocompression wedge bonds.
NOTE: Insulated wires defined in the device specification/drawing are excluded from this criteria.
(3) Missing or extra wire(s) or ribbon(s) not in conformance with the bonding diagram except those
wire(s) or ribbon(s) designated as microwave tuning devices on the bonding diagram.
NOTE: Extra wires added for statistical process control lot or lot sample bond strength/process
machine/operator evaluation in accordance with MIL-PRF-38534 are excluded from this criteria.
(4) Any wire that has no arc and makes a straight line run from die bonding pad to package post.
(5) Wires crossing wires except common conductors or as allowed in 3.2.2e of method 2010
(condition A).
(6) Excessive height in any component or wire loop such that it is closer than
0.127 mm (0.005 inch) to the lid when installed.
(7) Any wires which are broken.
NOTE: Wire bond tails, as defined by method 2017, are excluded from this criteria.
(8) Excessive sag where the wire lies on the substrate for a distance greater than 1/2 the distance
between the edge of the substrate bonding pad and the chip to which the wire is bonded, or comes
closer than 0.025 mm (0.001 inch) to runout of any conductive epoxy which mounts the chip.
(9) Bonds placed so that the wire exiting from the bond crosses over another bond, except for common
bonds.
NOTE: For RF/microwave devices, bonds placed so that the wire exiting from a bond crosses over
another bond, except by design, in which case the clearance shall be two wire diameters minimum
(common bonds are excluded from this criteria).