MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第284页

MIL-STD-883F METHOD 2013.1 16 May 1979 2 4. SUMMARY . The f ollowing det ails shall be speci fied i n the appli cable ac quisi tion doc ument: a. W her e applic able, gauges , drawi ngs, or photographs to be us ed as st …

MIL-STD-883F

METHOD 2013.1

16 May 1979

METHOD 2013.1

INTERNAL VISUAL INSPECTION FOR DPA

1. PURPOSE

. This is an internal visual inspection for use in destructive physical analysis (DPA) procedures. The

purpose of this destructive test is to examine devices opened for post test evaluation to verify that there is no evidence

of defects or damage resulting from prior testing.

2. APPARATUS

. The apparatus required for the performance of this test shall include binocular normal-incident

illumination microscopes capable of 30X to 60X and 75X to 150X magnification with both light and dark field illumination,

and any visual or mechanical standards to be used for measurements or comparison.

3. PROCEDURE

. The device shall be opened using a technique which does not damage or contaminate the internal

structure or in any way impair the ability to observe defects in the devices or the effects of preceding test exposures.

The device(s) shall be examined microscopically at 30X to 60X for particles other than those produced by opening. After

examination for particles is complete, the opened device(s) shall be blown off with a nominal gas blow (approximately 20

psig) to remove unattached material from the delidding process. The device shall then be microscopically examined to

determine the existence of other visual defects as described in 3.1 and 3.2.

3.1 Low magnification defects (30X to 60X)

. No device shall be acceptable that exhibits the following defects:

a. Improper substrate or bonding post plating material.

b. Improper bond wire material or size.

c. Metallic contamination or foreign material (see method 2010).

d. Lifted or broken wires.

e. Lifted, cracked, or broken die/substrate.

f. Improper die mounting (see method 2010).

g. Excessive lead wire loop or sag (see method 2010).

h. Improper bond technique and size (see method 2010).

i. Improper assembly die location and orientation as compared to the applicable assembly drawing.

j. Particles (see method 2010) other than those introduced during opening.

3.2 High magnification defects (75X to 150X)

. No device shall be acceptable that exhibits the following defects:

a. Metallization voids, corrosion, peeling, lifting, blistering, or scratches (see method 2010).

b. Bond intermetallics extending radially more than 0.1 mil beyond the bond periphery in any direction.

c. Improper die or substrate metallization design layout topography or identification.

d. Die cracks (see method 2010).

MIL-STD-883F

METHOD 2013.1

16 May 1979

4. SUMMARY. The following details shall be specified in the applicable acquisition document:

a. Where applicable, gauges, drawings, or photographs to be used as standards for the operator comparison (see 2).

b. Any applicable requirements for materials, design, or construction.

c. Requirement for photographic record, if applicable, and disposition of the photographs.

d. Where applicable, any additions or modifications to the specified procedure and criteria.

MIL-STD-883F

METHOD 2014

15 November 1974

METHOD 2014

INTERNAL VISUAL AND MECHANICAL

1. PURPOSE

. The purpose of this examination is to verify that internal materials, design and construction are in

accordance with the applicable acquisition document. This test is destructive and would normally be employed on a

sampling basis in qualification or quality conformance inspection of a specific device type to demonstrate compliance with

the acquisition document and to reveal any undocumented changes to the part type.

2. APPARATUS

. Equipment used in this examination shall be capable of demonstrating conformance to the

requirements of the applicable acquisition document and shall include optical equipment capable of magnification sufficient

to verify all structural features of the devices.

3. PROCEDURE

. The device shall be examined under a sufficient magnification to verify that all the internal materials,

design and construction are in accordance with the requirements of the applicable design documentation or other specific

requirements (see 4). Specimens of constructions which do not contain an internal cavity (e.g., encapsulated or embedded

devices) or those which would experience destruction of internal features of interest as a result of opening, may be obtained

by interception during manufacturing prior to encapsulation. Specimens of constructions with an internal cavity shall be

selected from devices which have completed all manufacturing operations and they shall be delidded or opened or both

taking care to minimize damage to the areas to be inspected. When specified by the applicable acquisition document, the

interception procedure may be used to obtain specimens of constructions with an internal cavity.

3.1 Photographs of die topography and intraconnection pattern

. When specified, an enlarged color photograph or

transparency shall be made showing the topography of elements formed on the die or substrate and the metallization

pattern. This photograph shall be at a minimum magnification of 80X except that if this results in a photograph larger than 8

inches x 10 inches, the magnification may be reduced to accommodate an 8 inches x 10 inches view.

3.2 Failure criteria

. Devices which fail to meet the detailed requirements for materials, design and construction shall

constitute a failure.

4. SUMMARY

. The following details shall be specified in the applicable acquisition document:

a. Any applicable requirements for materials, design and construction.

b. Allowance for interception procedure of internal cavity devices, when applicable (see 3).

c. Requirement for photographic record, if applicable (see 3.1), and disposition of photographs.