MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第411页

MIL-STD-883F METHOD 2032.2 18 June 2004 5 (34) Resist or ladder rung is that por tion of a resi stor ladder s truc ture i ntended to be l aser t rimmed t o resul t in an incr emental c hange in res ist ance. (35) Resist …

MIL-STD-883F

METHOD 2032.2

18 June 2004

(16) Mar is a nontearing surface disturbance such as an indentation or a buff mark.

(17) Metallization, multilevel (conductors)

is alternate layers of metallization, or other material used for

interconnection, that are isolated from each other by a grown or deposited insulating material. The term

"overlaying metallization" refers to any metallization layer on top of the insulating material.

(18) Metallization, multilayered (conductors)

is two or more layers of metallization, or other material used for

interconnection, that are not isolated from each other by a grown or deposited insulating material. The term

"underlying metallization" refers to any metallization layer below the top layer of metallization.

(19) Metallization, operating (conductors)

is all metallization (gold, aluminum, or other material) used for

interconnection. Bonding pads are considered to be operating metallization. Alignment markers, test

patterns, and identification markings are not considered to be operating metallization.

(20) Narrowest resistor width

is the narrowest portion of a given resistor prior to trimming; however, the

narrowest resistor width for a block resistor may be specified in the approved manufacturer's design

documentation.

(21) Neck-down

is tapering of a resistor line at a metallization interface. Resistor material taper is typically equal

on both sides of the line and is less abrupt than a void.

(22) Nicking (partial cut)

is incomplete or inadvertent trimming of a resistor adjacent to the one being trimmed or

of the next ladder rung of the same resistor.

(23) Nonplanar element

is one that is essentially three-dimensional.

(24) Original separation

is the separation dimension or space that is intended by design.

(25) Original width

is the width dimension that is intended by design.

(26) Oxide defect

is an irregularly shaped defect in the oxide characterized by two or three colored fringes at it

edges.

(27) Passivation

is the silicon oxide, silicon nitride, or other insulating material, that is grown or deposited directly

on the element prior to the deposition of metal.

(28) Passivation step

is a change in thickness of the passivation layer by design.

(29) Passive elements

are planar resistors, capacitors, inductors, and patterned substrates (both single-layer

and multilayer), and nonplanar chip capacitors, chip resistors, chip inductors, and transformers.

(30) Patterned substrate

is a substrate on which conductors, and components such as resistors or capacitors,

are formed using thick or thin film manufacturing techniques.

(31) Planar element

is one that is essentially two-dimensional with all points in a common plane.

(32) Protrusion

is a jutting-out of a circuit feature. Protrusion is typically caused by a photolithographic or

screening defect.

(33) Resistor ladder

is a resistor structure resembling a ladder in appearance that can be trimmed in incremental

steps. A coarse ladder structure is one in which trimming of a rung results in a large incremental resistance

change (one that can cause an out-of-tolerance condition to occur). A fine ladder structure is one in which

trimming of a rung results in a small incremental resistance change (one that can not cause an

out-of-tolerance condition to occur).

MIL-STD-883F

METHOD 2032.2

18 June 2004

(34) Resistor ladder rung is that portion of a resistor ladder structure intended to be laser trimmed to result in an

incremental change in resistance.

(35) Resistor loop

is a resistor structure resembling a loop in appearance that can be trimmed. A coarse loop

structure is one in which trimming results in a large resistance change (one that can cause an

out-of-tolerance condition to occur). A fine loop structure is one in which trimming results in a small

resistance change (one that cannot cause an out-of-tolerance condition to occur).

(36) Resistor material, self passivating

is one on which a conformal insulating layer can be thermally grown (such

as tantalum nitride on which tantalum pentoxide is grown).

(37) Scorching

is discoloration of laser trimmed thin film resistor material without alteration of its physical form.

(38) Scratch, metallization

is any tearing defect, including probe marks, in the surface of the metallization. A mar

on the metallization surface is not considered to be a scratch.

(39) Scratch, resistor

is any tearing defect in the resistor film. A mar on the resistor surface is not considered to

be a scratch.

(40) Sidebar

is that portion of a resistor ladder structure to which rungs are attached. Sidebars are not intended

to be laser trimmed.

(41) Substrate

is the supporting structural material into or upon which, or both, functional circuits are formed.

(42) Surface Acoustic Wave (SAW) element

is a planar element fabricated typically using thin film manufacturing

techniques on various substrate materials. Size varies as a function of frequency and design features

include interdigitated fingers.

(43) Terminal

is a metal area used to provide an electrical access point to functional circuitry.

(44) Thick film

is conductive, resistive or dielectric material screen printed onto a substrate and fired at

temperature to fuse into its final form.

(45) Thin film

is conductive, resistive or dielectric material, usually less than 50,000Å in thickness, that is

deposited onto a substrate by vacuum evaporation, sputtering, or other means.

(46) Underlying material

is any layer of material below the top-layer metallization. This includes metallization,

resistor, passivation or insulating layers, or the substrate itself.

(47) Via

is an opening in the insulating material in which a vertical conductive electrical connection from one

metallization layer to another is made.

(48) Vitrification

is conversion into glass or a glassy substance by heat and fusion.

(49) Void, metallization

is any missing metallization where the underlying material is visible (exposed). Voids

typically are caused by photolithographic, screen, or mask related defects, not by scratches.

(50) Void, resistor

is any missing resistor material where the underlying material is visible (exposed). Voids

typically are caused by photolithographic, screen, or mask related defects, not by scratches.

MIL-STD-883F

METHOD 2032.2

18 June 2004

(51) Wraparound conductor is one which extends around the edge of the substrate by design.

(52) Coupling (air) bridge

is a raised layer of metallization used for interconnection that is isolated from the

surface of the element by an air gap or other insulating material.

(53) Pit

is a depression produced in a substrate surface typically by nonuniform deposition of metallization or by

nonuniform processing such as excessively powered laser trim pulses.

(54) Substrate, hard

is the inorganic, rigid material into or upon which or both, functional circuits are formed.

Typical materials are alumina and silicon.

(55) Blister, metallization

is a hollow bump that can be flattened.

(56) Nodule, metallization

is a solid bump that cannot be flattened.

(57) Substrate plug via

is a cylinder-like volume in the substrate material filled with conductive material which

makes electrical connection from contact areas on the top surface to the back surface of the substrate..

3.1 Thin film element inspection

. Inspection for visual defects described in this section shall be conducted on each planar

thin film passive element. The "high magnification" inspection shall be within the range of 100X to 200X for both class H and

class K. The "low magnification" inspection shall be within the range of 30X to 60X for both class H and class K. When

inspection is performed prior to mounting, then elements utilizing ceramic or glass type substrates, without backside

metallization, shall be inspected using backlighting for conditions of hair-line voiding or bridging. Patterned substrates that

have geometries of 2.0 mils or greater shall be inspected at 10X to 60X magnification.

Class H

Class K

3.1.1 Operating metallization defects "high

magnification"

. No element shall be acceptable

that exhibits:

NOTE: The metallization defect criteria contained

in this section apply to operating metallization

only.

3.1.1.1 Metallization scratches

a. A scratch or probe mark in the metallization, a. Same as Class H.

excluding bonding pads, that both exposes

under-lying material anywhere along its length and

leaves less than 50 percent

of the original

metallization width undisturbed (see 2032-1h).

NOTE: These criteria do not apply to

capacitors (see 3.1.1.1e).

NOTE: Underlying material does not have to be

exposed along the full length of the scratch.

FIGURE 2032-1h. Class H metallization scratch criteria