MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第412页

MIL-STD-883F METHOD 2032.2 18 June 2004 6 (51) W rapar ound conduct or is one which extends around the edge of the subs trat e by design. (52) Coupling (ai r) br idge is a r aised l ayer of met allizat ion used f or int …

MIL-STD-883F

METHOD 2032.2

18 June 2004

(34) Resistor ladder rung is that portion of a resistor ladder structure intended to be laser trimmed to result in an

incremental change in resistance.

(35) Resistor loop

is a resistor structure resembling a loop in appearance that can be trimmed. A coarse loop

structure is one in which trimming results in a large resistance change (one that can cause an

out-of-tolerance condition to occur). A fine loop structure is one in which trimming results in a small

resistance change (one that cannot cause an out-of-tolerance condition to occur).

(36) Resistor material, self passivating

is one on which a conformal insulating layer can be thermally grown (such

as tantalum nitride on which tantalum pentoxide is grown).

(37) Scorching

is discoloration of laser trimmed thin film resistor material without alteration of its physical form.

(38) Scratch, metallization

is any tearing defect, including probe marks, in the surface of the metallization. A mar

on the metallization surface is not considered to be a scratch.

(39) Scratch, resistor

is any tearing defect in the resistor film. A mar on the resistor surface is not considered to

be a scratch.

(40) Sidebar

is that portion of a resistor ladder structure to which rungs are attached. Sidebars are not intended

to be laser trimmed.

(41) Substrate

is the supporting structural material into or upon which, or both, functional circuits are formed.

(42) Surface Acoustic Wave (SAW) element

is a planar element fabricated typically using thin film manufacturing

techniques on various substrate materials. Size varies as a function of frequency and design features

include interdigitated fingers.

(43) Terminal

is a metal area used to provide an electrical access point to functional circuitry.

(44) Thick film

is conductive, resistive or dielectric material screen printed onto a substrate and fired at

temperature to fuse into its final form.

(45) Thin film

is conductive, resistive or dielectric material, usually less than 50,000Å in thickness, that is

deposited onto a substrate by vacuum evaporation, sputtering, or other means.

(46) Underlying material

is any layer of material below the top-layer metallization. This includes metallization,

resistor, passivation or insulating layers, or the substrate itself.

(47) Via

is an opening in the insulating material in which a vertical conductive electrical connection from one

metallization layer to another is made.

(48) Vitrification

is conversion into glass or a glassy substance by heat and fusion.

(49) Void, metallization

is any missing metallization where the underlying material is visible (exposed). Voids

typically are caused by photolithographic, screen, or mask related defects, not by scratches.

(50) Void, resistor

is any missing resistor material where the underlying material is visible (exposed). Voids

typically are caused by photolithographic, screen, or mask related defects, not by scratches.

MIL-STD-883F

METHOD 2032.2

18 June 2004

(51) Wraparound conductor is one which extends around the edge of the substrate by design.

(52) Coupling (air) bridge

is a raised layer of metallization used for interconnection that is isolated from the

surface of the element by an air gap or other insulating material.

(53) Pit

is a depression produced in a substrate surface typically by nonuniform deposition of metallization or by

nonuniform processing such as excessively powered laser trim pulses.

(54) Substrate, hard

is the inorganic, rigid material into or upon which or both, functional circuits are formed.

Typical materials are alumina and silicon.

(55) Blister, metallization

is a hollow bump that can be flattened.

(56) Nodule, metallization

is a solid bump that cannot be flattened.

(57) Substrate plug via

is a cylinder-like volume in the substrate material filled with conductive material which

makes electrical connection from contact areas on the top surface to the back surface of the substrate..

3.1 Thin film element inspection

. Inspection for visual defects described in this section shall be conducted on each planar

thin film passive element. The "high magnification" inspection shall be within the range of 100X to 200X for both class H and

class K. The "low magnification" inspection shall be within the range of 30X to 60X for both class H and class K. When

inspection is performed prior to mounting, then elements utilizing ceramic or glass type substrates, without backside

metallization, shall be inspected using backlighting for conditions of hair-line voiding or bridging. Patterned substrates that

have geometries of 2.0 mils or greater shall be inspected at 10X to 60X magnification.

Class H

Class K

3.1.1 Operating metallization defects "high

magnification"

. No element shall be acceptable

that exhibits:

NOTE: The metallization defect criteria contained

in this section apply to operating metallization

only.

3.1.1.1 Metallization scratches

a. A scratch or probe mark in the metallization, a. Same as Class H.

excluding bonding pads, that both exposes

under-lying material anywhere along its length and

leaves less than 50 percent

of the original

metallization width undisturbed (see 2032-1h).

NOTE: These criteria do not apply to

capacitors (see 3.1.1.1e).

NOTE: Underlying material does not have to be

exposed along the full length of the scratch.

FIGURE 2032-1h. Class H metallization scratch criteria

MIL-STD-883F

METHOD 2032.2

18 June 2004

Class H

Class K

3.1.1.1 b. Scratch in the bonding pad area 3.1.1.1 b. Less than 75 percent (see

that both exposes underlying material and figure 2032-2k).

reduces the metallization path width,

where it enters the bonding pad, and leaves

less than 50 percent

of its original

metallization width. If two or more

metallization paths enter a bonding pad,

each shall be considered separately

(see figure 2032-2h).

FIGURE 2032-2h. Class H metallization width

FIGURE 2032-2k. Class K metallization width

reduction at bonding pad

criteria

. criteria.

3.1.1.1 c. Scratch that completely crosses a c. Same as class H.

Metallization path and damages the

surface of the surrounding

passivation, glassivation, or substrate on

either side.

d. Scratches or probe marks in the d. Same as class H.

bonding pad area that expose

underlying material over greater

than 25 percent of the original

unglassivated metallization area.

e .For capacitors only, a scratch in the e. Same as class H.

metallization, other than in the bonding

pad area, that exposes the dielectric

material.