MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第413页

MIL-STD-883F METHOD 2032.2 18 June 2004 7 Class H Class K 3.1.1. 1 b. Scratc h in the bondi ng pad area 3.1.1.1 b. Less than 75 per cent ( see that bot h exposes underl ying materi al and figure 2032- 2k). reduces the me…

MIL-STD-883F

METHOD 2032.2

18 June 2004

(51) Wraparound conductor is one which extends around the edge of the substrate by design.

(52) Coupling (air) bridge

is a raised layer of metallization used for interconnection that is isolated from the

surface of the element by an air gap or other insulating material.

(53) Pit

is a depression produced in a substrate surface typically by nonuniform deposition of metallization or by

nonuniform processing such as excessively powered laser trim pulses.

(54) Substrate, hard

is the inorganic, rigid material into or upon which or both, functional circuits are formed.

Typical materials are alumina and silicon.

(55) Blister, metallization

is a hollow bump that can be flattened.

(56) Nodule, metallization

is a solid bump that cannot be flattened.

(57) Substrate plug via

is a cylinder-like volume in the substrate material filled with conductive material which

makes electrical connection from contact areas on the top surface to the back surface of the substrate..

3.1 Thin film element inspection

. Inspection for visual defects described in this section shall be conducted on each planar

thin film passive element. The "high magnification" inspection shall be within the range of 100X to 200X for both class H and

class K. The "low magnification" inspection shall be within the range of 30X to 60X for both class H and class K. When

inspection is performed prior to mounting, then elements utilizing ceramic or glass type substrates, without backside

metallization, shall be inspected using backlighting for conditions of hair-line voiding or bridging. Patterned substrates that

have geometries of 2.0 mils or greater shall be inspected at 10X to 60X magnification.

Class H

Class K

3.1.1 Operating metallization defects "high

magnification"

. No element shall be acceptable

that exhibits:

NOTE: The metallization defect criteria contained

in this section apply to operating metallization

only.

3.1.1.1 Metallization scratches

a. A scratch or probe mark in the metallization, a. Same as Class H.

excluding bonding pads, that both exposes

under-lying material anywhere along its length and

leaves less than 50 percent

of the original

metallization width undisturbed (see 2032-1h).

NOTE: These criteria do not apply to

capacitors (see 3.1.1.1e).

NOTE: Underlying material does not have to be

exposed along the full length of the scratch.

FIGURE 2032-1h. Class H metallization scratch criteria

MIL-STD-883F

METHOD 2032.2

18 June 2004

Class H

Class K

3.1.1.1 b. Scratch in the bonding pad area 3.1.1.1 b. Less than 75 percent (see

that both exposes underlying material and figure 2032-2k).

reduces the metallization path width,

where it enters the bonding pad, and leaves

less than 50 percent

of its original

metallization width. If two or more

metallization paths enter a bonding pad,

each shall be considered separately

(see figure 2032-2h).

FIGURE 2032-2h. Class H metallization width

FIGURE 2032-2k. Class K metallization width

reduction at bonding pad

criteria

. criteria.

3.1.1.1 c. Scratch that completely crosses a c. Same as class H.

Metallization path and damages the

surface of the surrounding

passivation, glassivation, or substrate on

either side.

d. Scratches or probe marks in the d. Same as class H.

bonding pad area that expose

underlying material over greater

than 25 percent of the original

unglassivated metallization area.

e .For capacitors only, a scratch in the e. Same as class H.

metallization, other than in the bonding

pad area, that exposes the dielectric

material.

MIL-STD-883F

METHOD 2032.2

18 June 2004

3.1.1.2 Metallization voids

a. Void(s) in the metallization, excluding a. Same as Class H

bonding pads, that leaves less than

50 percent

of the original metallization

width undisturbed (see figure 2032-3h).

FIGURE 2032-3h. Class H metallization void criteria

b. Void(s) in the bonding pad area that reduces b. Less than 75 percent

the metallization path width, where it

enters the bonding pad, to less than 50

percent

of its original metallization width.

If two or more metallization paths enter a

bonding pad, each shall be considered

separately.

NOTE: Figures 2032-2h and 2032-2k

illustrate metallization width reduction

at bonding pad criteria for scratches.

Void criteria are similar.