MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第415页
MIL-STD-883F METHOD 2032.2 18 June 2004 9 Class H Class K 3.1.1. 2 c. Void( s) i n the bonding pad ar ea that 3.1.1. 2 c . Same as clas s H. expose underlyi ng material over great er than 25 perc ent of t he origi nal un…
MIL-STD-883F
METHOD 2032.2
18 June 2004
8
3.1.1.2 Metallization voids
.
a. Void(s) in the metallization, excluding a. Same as Class H
bonding pads, that leaves less than
50 percent
of the original metallization
width undisturbed (see figure 2032-3h).
FIGURE 2032-3h. Class H metallization void criteria
.
b. Void(s) in the bonding pad area that reduces b. Less than 75 percent
the metallization path width, where it
enters the bonding pad, to less than 50
percent
of its original metallization width.
If two or more metallization paths enter a
bonding pad, each shall be considered
separately.
NOTE: Figures 2032-2h and 2032-2k
illustrate metallization width reduction
at bonding pad criteria for scratches.
Void criteria are similar.
MIL-STD-883F
METHOD 2032.2
18 June 2004
9
Class H Class K
3.1.1.2 c. Void(s) in the bonding pad area that 3.1.1.2 c. Same as class H.
expose underlying material over greater
than 25 percent of the original
unglassivated metallization area.
NOTE: For RF/microwave elements on nonconductive
substrates, a void created in the bonding
pad area as a result of wire bond removal for
performance optimization or tuning, is not
rejectable provided that the void remains
entirely visible.
d. For capacitors only, void(s) in d. Same as class H.
metallization, other than in the bonding
pad area, that reduces the metallization
to an extent greater than an area
equivalent to 25 percent of the
capacitor metallization.
e. For interdigitated capacitors only, void(s) e. Less than 75 percent (see
in the metallization that leaves less than
figure 2032-4k).
50 percent
of the original metallization
width undisturbed (see figure 2032-4h).
FIGURE 2032-4h. Class H interdigitated capacitor
FIGURE 2032-4k. Class K interdigitated capacitor
metallization void criterion
. metallization void criterion.
MIL-STD-883F
METHOD 2032.2
18 June 2004
10
Class H Class K
3.1.1.3 Metallization corrosion
.
a. Any metallization corrosion. a. Same as class H.
NOTE: Metallization having any localized discolored
area shall be closely examined and rejected unless
it is demonstrated to be a harmless film, glassivation
interface, or other obscuring effect.
3.1.1.4 Metallization adherence
.
a. Any metallization lifting, peeling, a. Same as class H.
or blistering.
NOTE: Nodules are acceptable. In
order to determine if a bump in the
metallization is a blister or a
nodule, attempt to flatten the bump
with a nonmetallic instrument. If
the bump flattens, then it is a blister.
NOTE: These criteria are not applicable
to undercutting or separation induced
anomalies (for example, metallization
lifting due to scribe and break or diamond
sawing) since these are not indicative of
adhesion problems.
3.1.1.5 Metallization protrusion
.
a. Protrusion of metallization that reduces a. Same as class H.
the original separation between adjacent
operating metallization by greater than
50 percent (see figure 2032-5h).
FIGURE 2032-5h. Class H operating metallization protrusion criterion
.