MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第416页
MIL-STD-883F METHOD 2032.2 18 June 2004 10 Cla ss H Class K 3.1.1 .3 Meta llization corrosion . a. Any meta llization corrosion . a . Same a s class H. NOTE: Metall izati on having any loc alized dis col ored area shal l…
MIL-STD-883F
METHOD 2032.2
18 June 2004
9
Class H Class K
3.1.1.2 c. Void(s) in the bonding pad area that 3.1.1.2 c. Same as class H.
expose underlying material over greater
than 25 percent of the original
unglassivated metallization area.
NOTE: For RF/microwave elements on nonconductive
substrates, a void created in the bonding
pad area as a result of wire bond removal for
performance optimization or tuning, is not
rejectable provided that the void remains
entirely visible.
d. For capacitors only, void(s) in d. Same as class H.
metallization, other than in the bonding
pad area, that reduces the metallization
to an extent greater than an area
equivalent to 25 percent of the
capacitor metallization.
e. For interdigitated capacitors only, void(s) e. Less than 75 percent (see
in the metallization that leaves less than
figure 2032-4k).
50 percent
of the original metallization
width undisturbed (see figure 2032-4h).
FIGURE 2032-4h. Class H interdigitated capacitor
FIGURE 2032-4k. Class K interdigitated capacitor
metallization void criterion
. metallization void criterion.
MIL-STD-883F
METHOD 2032.2
18 June 2004
10
Class H Class K
3.1.1.3 Metallization corrosion
.
a. Any metallization corrosion. a. Same as class H.
NOTE: Metallization having any localized discolored
area shall be closely examined and rejected unless
it is demonstrated to be a harmless film, glassivation
interface, or other obscuring effect.
3.1.1.4 Metallization adherence
.
a. Any metallization lifting, peeling, a. Same as class H.
or blistering.
NOTE: Nodules are acceptable. In
order to determine if a bump in the
metallization is a blister or a
nodule, attempt to flatten the bump
with a nonmetallic instrument. If
the bump flattens, then it is a blister.
NOTE: These criteria are not applicable
to undercutting or separation induced
anomalies (for example, metallization
lifting due to scribe and break or diamond
sawing) since these are not indicative of
adhesion problems.
3.1.1.5 Metallization protrusion
.
a. Protrusion of metallization that reduces a. Same as class H.
the original separation between adjacent
operating metallization by greater than
50 percent (see figure 2032-5h).
FIGURE 2032-5h. Class H operating metallization protrusion criterion
.
MIL-STD-883F
METHOD 2032.2
18 June 2004
11
Class H Class K
3.1.1.5 b. For interdigitated capacitors only, 3.1.1.5 b. Same as class H.
protrusion of metallization that reduces
the original separation by greater than
50 percent (see figure 2032-6h).
FIGURE 2032-6h. Class H interdigitated capacitor metallization protrusion criterion
.
3.1.1.6 Metallization alignment
.
a. A contact window that has less than 50
a. Less than 75 percent.
percent
of its area covered by metallization.