MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第427页
MIL-STD-883F METHOD 2032.2 18 June 2004 21 Class H Cla ss K 3.1.5 For eign materi al defec ts "l ow magnific ation" . No element s hall be ac ceptabl e that exhibit s: a. For mounted elements , unatt ached, a. …
MIL-STD-883F
METHOD 2032.2
18 June 2004
20
Class H Class K
3.1.4 f. N/A 3.1.4 f. Semicircular crack or combination of
cracks along the element edge whose total
length is equal to or greater than 75
percent of the narrowest separation
between any two bonding pads (see figure
2032-12k).
FIGURE 2032-12k. Class K semicircular crack
criterion
.
g. An attached portion of an active circuit g. Same as class H.
area from an adjacent element.
h. Any crack that does not originate at an h. Same as class H.
edge.
i. Holes through the substrate, unless by i. Same as class H.
design.
MIL-STD-883F
METHOD 2032.2
18 June 2004
21
Class H Class K
3.1.5 Foreign material defects "low magnification"
.
No element shall be acceptable that exhibits:
a. For mounted elements, unattached, a. Same as class H.
conductive foreign material on the surface
of the elements. For unmounted elements,
unattached, conductive foreign material
on the surface of the element that is
large enough to bridge operating
metallization paths, active circuitry,
or any combination of these.
NOTE: If an element has an insulating
layer (such as glassivation or self-
passivation) that covers operating
metallization paths, active circuitry,
or any combination of these, then the
presence of unattached, conductive
foreign material, that is large enough
to bridge these features, is acceptable
since the features are protected by the
insulating layer.
NOTE: All foreign material shall be
considered to be unattached unless
otherwise verified to be attached.
Verification of attachment shall be
accomplished by a light touch with an
appropriate mechanical device
(i.e., needle, probe, pick, etc.), or
by a suitable cleaning process approved
by the acquiring activity, or by a
blow-off with a nominal gas blow
(approximately 20 psig).
NOTE: Removal of unattached foreign
material may be attempted using the
techniques for verification of attachment
discussed above.
NOTE: Semiconductor particles are
considered to be foreign material.
b. Attached, conductive foreign material that b. Same as class H.
bridges metallization paths, active
circuitry, or any combination of these.
c. Liquid droplets, ink drops, or chemical c. Same as class H.
stains that appear to bridge any
unglassivated or unpassivated active
circuit areas.
d. Attached foreign material that covers greater d. Same as class H.
than 25 percent of a bonding pad area.
MIL-STD-883F
METHOD 2032.2
18 June 2004
22
Class H Class K
3.1.6 Thin film resistor defects, "high magnification"
.
No element shall be acceptable that exhibits:
a. Voids at the terminal that reduces the a. Same as Class H
resistor width to less than 50 percent of
the original resistor width (see figure
2032-13h).
FIGURE 2032-13h. Class H film resistor width reduction at terminal by voids criterion
.
b. Neckdown at the terminal that reduces the
b. Same as Class H.
resistor width to less than 75 percent of
the original resistor width
(see figure
2032-14h).
FIGURE 2032-14h. Class H film resistor width reduction at terminal by necking criterion
.