MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第436页
MIL-STD-883F METHOD 2032.2 18 June 2004 30 C lass H Cla ss K 3.1. 7 c . Br idging of det rit us between r ungs in t he 3.1.7 c. Same as cl ass H. acti ve area of a r esis tor l adder st ruc ture (see f igure 2032- 26h). …
MIL-STD-883F
METHOD 2032.2
18 June 2004
29
Class H Class K
3.1.7 b. (Continued.)
FIGURE 2032-24h. Class H detritus criterion for self-passivating resistor materials
.
NOTE: In the case of a resistor loop made with
self-passivating resistor material which is
similar in configuration to the one shown
in figure 2032-25h, there shall be at least
one kerf that contains a clear path of at
least 0.1 mil in width; otherwise, the element
shall be rejected.
FIGURE 2032-25h. Class H resistor loop element detritus criterion for self-passivating resistor materials
.
MIL-STD-883F
METHOD 2032.2
18 June 2004
30
Class H Class K
3.1.7 c. Bridging of detritus between rungs in the 3.1.7 c. Same as class H.
active area of a resistor ladder structure
(see figure 2032-26h).
NOTE: Bridging of detritus in inactive
areas is acceptable.
FIGURE 2032-26h. Bridging of detritus between rungs in the active area of a
resistor ladder structure criterion
.
MIL-STD-883F
METHOD 2032.2
18 June 2004
31
Class H Class K
3.1.7 d. No nicking or scorching is allowed except as 3.1.7 d. Same as class H.
permitted below.
NOTE: This does not apply to rungs in a
fine resistor ladder structure (see figure
2032-27h).
NOTE: See 3.i.(33) for a definition of
coarse and fine resistor ladder structures.
The element drawing must be referenced to
determine if a given resistor ladder
structure is coarse or fine.
FIGURE 2032-27h. Class H resistor ladder structure nicking and scorching criteria exceptions
.