MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第451页
MIL-STD-883F METHOD 2032.2 18 June 2004 45 Cla ss H Class K 3.2.1 .7 Metalliz ed thr ough-hole defect s, "l ow magnific ation" . No element s hall be ac ceptabl e that exhibit s: a. Through-hol e meta llization…
MIL-STD-883F
METHOD 2032.2
18 June 2004
44
Class H Class K
3.2.1.6 Metallization overlap
.
a. Contact overlap between the upper and lower a. Same as class H.
metallizations that is less than 50 percent
of the designed contact overlap area (see
figure 2032-42h).
NOTE: The overlap area is that area in which
the upper metallization actually contacts
the lower metallization.
FIGURE 2032-42h. Class H metallization overlap criterion
.
MIL-STD-883F
METHOD 2032.2
18 June 2004
45
Class H Class K
3.2.1.7 Metallized through-hole defects, "low magnification"
.
No element shall be acceptable that exhibits:
a. Through-hole metallization that is not a. Same as class H.
vertically continuous or that does not cover
at least a continuous 50 percent of the inside,
circumferential surface area unless by design.
3.2.1.8 Wrap-around connection defects, "low magnification"
.
No element shall be acceptable that exhibits:
a. Unmetallized area in the edges of wrap-around a. Same as class H.
connections greater than 50 percent of the
largest dimension of the edge metallization
(see figure 2032-43Ah).
FIGURE 2032-43Ah. Class H wrap-around connection unmetallized area criterion
.
MIL-STD-883F
METHOD 2032.2
18 June 2004
46
3.2.1.9 Substrate plug via defects, “low magnification”
. When inspected from each side of the substrate, no element shall
be acceptable that exhibits:
a. A complete void through the via.
b. Any lifting, peeling, or blistering of the via metallization.
c. Via fill less than 75% of the total surface area of the via plug and less than 75% of the substrate thickness.
NOTE: These are minimum requirements. Via flatness and other requirements shall be in accordance with the
applicable detail drawings.
FIGURE 2032-43Bh. Classes H and K via fill criteria
.