MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第469页

MIL-STD-883F METHOD 2032.2 18 June 2004 63 Cla ss H Class K 3.3. 7 b. A ker f that l eaves les s t han 50 percent 3. 3.7 b. Same as clas s H. of the or iginal wi dth of t he resi stor unless by design. c. Metallized term…

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MIL-STD-883F
METHOD 2032.2
18 June 2004
62
3.3.6 Inductor and transformer defects, "low
magnification"
. No element shall be acceptable
that exhibits:
a. Peeling, lifting or blistering of winding a. Same as class H.
metallization or insulation.
b. Evidence of shorts between adjacent turns or b. Same as class H.
windings.
c. Cracks or exposure of bare magnetic core c. Same as class H.
material. Exposed bare magnetic core material
is acceptable if by design.
d. Pits or voids in the core insulation greater d. Same as class H.
than 5.0 mils area that expose the magnetic
core material.
e. Separation less than 5.0 mils between wire e. Same as class H.
termination points of the same or adjacent
windings.
f. Missing polarity identification unless by f. Same as class H.
design.
g. Operating metallization and multilevel thick g. Same as class H.
film defects as described in 3.2.1 and
3.2.5 herein.
3.3.7 Chip resistor defects, "low magnification"
.
No element shall be acceptable that exhibits:
a. Reduction of the resistor width resulting from a. Same as class H.
voids, bubbles, nicks, or scratches, or a
combination of these, that leaves less than 50
percent of the narrowest resistor width (see
figure 2032-62h).
FIGURE 2032-62h. Class H resistor width reduction criterion
.
MIL-STD-883F
METHOD 2032.2
18 June 2004
63
Class H Class K
3.3.7 b. A kerf that leaves less than 50 percent 3.3.7 b. Same as class H.
of the original width of the resistor
unless by design.
c. Metallized termination width less than c. Same as class H.
10.0 mils unless by design
(see figure 2032-63h).
FIGURE 2032-63h. Class H termination width criterion
.
d. A crack, chipout or void in the substrate d. Same as class H.
greater than 3.0 mils in any direction (see
figure 2032-64h).
FIGURE 2032-64h. Class H substrate defect criteria
.
MIL-STD-883F
METHOD 2032.2
18 June 2004
64
Class H Class K
3.3.7 e. Build-up of termination material on metallized 3.3.7 e. Same as class H.
termination areas greater than 3.0 mils high
for weldable metallized terminations or 8.0 mils
high for solderable metallized terminations
(see figure 2032-65h).
FIGURE 2032-65h. Class H termination material buildup criteria
.
Class H
Class K
f. Termination material splattered throughout f. Same as class H.
the resistor (see figure 2032-66h).
FIGURE 2032-66h. Class H termination material splatter criteria
.