MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第472页

MIL-STD-883F METHOD 2032.2 18 June 2004 66 Cla ss H Class K 3.4.4 For eign materi al defec ts "l ow magnific ation" . No element s hall be ac ceptabl e that exhibit s: a. For mounted and unmounted el ements, un…

MIL-STD-883F

METHOD 2032.2

18 June 2004

3.4 Surface acoustic wave (SAW) element inspection. Inspection for visual defects described in this section shall be

conducted on each SAW element. When inspection is performed prior to mounting, then SAW elements may be inspected

using backlighting. All inspection shall be performed at "low magnification" within the range of 10X to 60X for both class H

and class K.

3.4.1 Defect control

. The manufacturer shall perform an audit on a weekly basis for the presence of process related

defects which impact SAW device performance (e.g., metallization voids, metallization scratches, metallization bridging, or

crystal material pits/scratches/chipouts). This audit may be satisfied during routine internal visual inspection. If the

presence of process related defects are discovered, the manufacturer shall monitor for a defect pattern to be used for the

improvement of process controls. The manufacturer shall document the results of his investigation and corrective action to

eliminate trends. The intent of this procedure is to require monitoring of process related defects which affect SAW device

performance but do not cause reliability degradation leading to eventual failure of device function.

Class H

Class K

3.4.2 Operating metallization defects "low

magnification." No element shall be acceptable

that exhibits:

3.4.2.1 Metallization corrosion

a. Any metallization corrosion. a. Same as class H.

3.4.2.2 Metallization adherence

a. Any metallization lifting, peeling or a. Same as class H.

blistering.

3.4.3 Substrate material defects "low magnification"

No element shall be acceptable that exhibits:

a. Any crack that exceeds 5.0 mils in length. a. Same as class H.

b. Any crack that is within 0.1 mil of any b. Same as class H.

active circuit area or operating

metallization.

c. Any crack exceeding 1.0 mil in length c. Same as class H.

extending from the element edge directly

toward the active circuit area or operating

metallization.

MIL-STD-883F

METHOD 2032.2

18 June 2004

Class H Class K

3.4.4 Foreign material defects "low magnification"

No element shall be acceptable that exhibits:

a. For mounted and unmounted elements, unattached a. Same as class H.

conductive foreign material on the surface of

the element that is large enough to bridge

operating metallization paths.

NOTE: All foreign material shall be considered

to be unattached unless otherwise verified to

be attached. Verification of attachment shall

be accomplished by a light touch with a

mechanical device (i.e., needle, probe, pick,

etc.) or by a suitable cleaning process

approved by the acquiring activity, or by a

nominal gas blow (approximately 20 psig).

Removal of unattached foreign material may be

attempted using the techniques for

verification of attachment discussed above.

b. Liquid droplets, ink drops, or chemical stains b. Same as class H.

that appear to bridge unglassivated

metallization.

c. Attached foreign material that covers greater c. Same as class H.

than 25 percent of a bonding pad area.

4. SUMMARY

. The following details shall be specified in the applicable acquisition document:

a. Class H or class K visual requirements.

b. Where applicable, any conflicts with element design, topology or construction (see 3).

c. Where applicable, gauges, drawings and photographs that are to be used as standards for operator

comparison (see 2).

d. Where applicable, magnifications other than those specified (see 3).

MIL-STD-883F

METHOD 2035

19 August 1994

METHOD 2035

ULTRASONIC INSPECTION OF TAB BONDS

1. Purpose

. The purpose of this method is to detect unbonded and insufficiently bonded sites in TAB (Tape automated

bonding) devices in the open package condition, through the measurement of bond area by means of Scanning Laser

Acoustic Microscope (SLAM) techniques. It establishes methods and criteria for ultrasonic inspection of these TAB

semiconductor devices.

NOTES:

1. For various metallurgical constitutions, absolute strengths expressed as pull strengths per unit area of bond differ.

A scalar equivalency must be established for each alloy and process, to relate bond area to anticipated bond

strength.

2. The term TAB bond in this document refers to one of the multiplicity of bonds, inner lead (ILB) or outer lead (OLB)

formed by a tape automated bonding (TAB) process. In the case of ILB, it refers to that area of the device

defined by the intersection of the beam lead, the semiconductor bonding pad area, and the contact outline of the

thermode or fixture performing the bond, in the horizontal plane, and refers to all interfaces within that area

between the semiconductor die surface and the beam lead. In the case of OLB, it refers to that area of the device

defined by the intersection of the beam lead, the substrate bonding pad area, and contact outline of thermode or

fixture performing the bond, in the horizontal plane, and refers to all interfaces within that area between the

substrate surface and the beam lead.

3. The terms ultrasonic inspection and SLAM as used in this document refer to the process and instrument

performing high frequency ultrasonic inspection and produce grey-scale images of the internal features of devices

by means of scanning laser acoustic microscopy, and by which bond area measurement may be performed.

2. Apparatus

. The apparatus and materials for this evaluation shall include:

a. Ultrasonic imaging equipment of the scanning laser acoustic microscope type, of frequency and resolution

sufficient to penetrate the bond area and render an image which discloses the size and shape of the bond area

with a linear dimensional allowance no greater than 20 percent of a bond dimension. Frequency is dictated by

consideration of the wavelength of sound in the materials and the limit of resolution. Whereas lower frequencies

have been used for inspection of larger scale device types, the present size of TAB sites requires frequencies of

from one hundred to several hundred megahertz.

b. A visual output/storage device. A method of producing, displaying, and storing a scale image of adequate grey-

scale range (minimum of 64 levels) shall be used. Such device may include a grey-scale printer/plotter, or

preferably CRT display with an image digitizer capable of rendering images in digital code for bulk media storage

and retrieval, and algorithmic processing and evaluation. The images so stored shall be suitable for manual, or

preferably, automated analysis. The output devices shall be capable of producing and storing the images to a

spatial and grey-scale resolution at least equal to the resolution of their acquisition by the ultrasonic imaging

equipment. The output/storage device must be capable of presenting, storing, and retrieving image label

information.

3. Procedure

. The equipment used shall be adjusted as necessary to obtain satisfactory images of good contrast to

achieve maximum image detail within the sensitivity requirements of the bond type being examined. The appropriate

operator methodology will be used to insure adequate positioning and insonification (irradiation by ultrasound) of the device

for purposes of producing its image. Additional protocols will be followed as required. The normal intrinsic strength of the

bond metallurgy shall be known and established, and the metallurgy of the devices to be tested should be qualified as in

agreement with that strength.