MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第496页

MIL-STD-883F METHOD 3008.1 15 November 1974 2 This page i ntenti onally lef t blank

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MIL-STD-883F
METHOD 3008.1
15 November 1974
1
METHOD 3008.1
BREAKDOWN VOLTAGE, INPUT OR OUTPUT
1. PURPOSE
. This method establishes the means for assuring device performance to the limits specified in the
applicable acquisition document in regard to input and output breakdown voltage symbolized as V
IH
(max), V
OH
(max), V
IL
(min), and V
OL
(min) as applicable. This method applies to digital microelectronic devices, such as TTL, DTL, RTL, ECL,
and MOS.
2. APPARATUS
. The test chamber shall be capable of maintaining the device under test at any specified temperature.
2.1 Method A
. This test is generally performed to assure that breakdown does not occur on a device. An instrument shall
be provided that has the capability of forcing a specified voltage at the input or output terminal of the test circuit and
measuring the resultant current flowing in that terminal. The test instrument shall also have the capability of applying
voltage levels to all other terminals. Care should be taken to assure that the test equipment does not inadvertently apply
voltage to the device under test that will exceed the maximum rating of each terminal and that the current from the test
equipment is sufficiently limited so that the device is not destroyed. This method can also be used to test the ability of
power supply terminals to withstand a voltage overload.
2.2 Method B
. This test is generally performed to assure that breakdown does occur on a device as specified in the
applicable acquisition document. An instrument shall be provided that has the capability of forcing a specified current at the
input or output terminal of the test circuit and measuring the resultant voltage at that terminal. The test instrument shall also
have the capability of applying voltage levels to all other terminals. Care should be taken to assure that the test equipment
does not inadvertently apply voltage to the device under test that will exceed the maximum rating of each terminal so that the
device is not destroyed. The minimum compliance voltage of the current source shall be specified when applicable.
3. PROCEDURE
. The device shall be stabilized at the specified test temperature.
3.1 Method A
. All terminals, with the exception of the test terminal, shall be conditioned according to the applicable
acquisition document. A prescribed voltage shall be applied to the designated input or output terminal and the resultant
current measured. When testing for breakdown, all input and output terminals shall be tested individually. At the conclusion
of the test, the device shall be functional.
3.2 Method B
. All terminals, with the exception of the test terminal, shall be conditioned according to the applicable
acquisition document. The specified current shall be forced at the designated input or output terminal, and the voltage at the
terminal measured. At the conclusion of the test, the device shall be functional.
4. SUMMARY
. The following details shall be specified in the applicable acquisition document:
a. Test temperature.
b. Forced voltages (method A).
c. Conditioning voltages for all other terminals.
d. Forced current (method B).
e. Maximum breakdown current limits (method A).
f. Minimum breakdown terminal voltage (method B).
MIL-STD-883F
METHOD 3008.1
15 November 1974
2
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MIL-STD-883F
METHOD 3009.1
15 November 1974
1
METHOD 3009.1
INPUT CURRENT, LOW LEVEL
1. PURPOSE
. This method establishes the means for assuring circuit performance to the limits specified in the
applicable acquisition document in regard to LOW level input load which may be specified as a minimum value (I
IL
min) or as
a maximum value (I
IL
max). This method applied to digital microelectronic devices, such as TTL, DTL, RTL, ECL, and MOS.
2. APPARATUS
. The test chamber shall be capable of maintaining the device under test at any specified test
temperature. An instrument shall be provided that has the capability of applying the worst case LOW voltage to the input
terminal of the test circuit, (and worst case levels on the other inputs), and measuring the resultant current at the input
terminal.
3. PROCEDURE
. The device shall be stabilized at the specified test temperature. Worst case power supply voltages and
worst case input voltages shall be applied to the test circuit and the resultant current at the input terminal shall be measured.
Inputs shall be tested individually.
4. SUMMARY
. The following details shall be specified in the applicable acquisition document:
a. Test temperature.
b. Power supply voltages.
c. Input voltage.
d. Voltages at other input terminals which cause worst case current at the input under test.
e. I
IL
max or I
IL
min.