MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第498页

MIL-STD-883F METHOD 3009.1 15 November 1974 2 This page i ntenti onally lef t blank

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MIL-STD-883F
METHOD 3009.1
15 November 1974
1
METHOD 3009.1
INPUT CURRENT, LOW LEVEL
1. PURPOSE
. This method establishes the means for assuring circuit performance to the limits specified in the
applicable acquisition document in regard to LOW level input load which may be specified as a minimum value (I
IL
min) or as
a maximum value (I
IL
max). This method applied to digital microelectronic devices, such as TTL, DTL, RTL, ECL, and MOS.
2. APPARATUS
. The test chamber shall be capable of maintaining the device under test at any specified test
temperature. An instrument shall be provided that has the capability of applying the worst case LOW voltage to the input
terminal of the test circuit, (and worst case levels on the other inputs), and measuring the resultant current at the input
terminal.
3. PROCEDURE
. The device shall be stabilized at the specified test temperature. Worst case power supply voltages and
worst case input voltages shall be applied to the test circuit and the resultant current at the input terminal shall be measured.
Inputs shall be tested individually.
4. SUMMARY
. The following details shall be specified in the applicable acquisition document:
a. Test temperature.
b. Power supply voltages.
c. Input voltage.
d. Voltages at other input terminals which cause worst case current at the input under test.
e. I
IL
max or I
IL
min.
MIL-STD-883F
METHOD 3009.1
15 November 1974
2
This page intentionally left blank
MIL-STD-883F
METHOD 3010.1
15 November 1974
1
METHOD 3010.1
INPUT CURRENT, HIGH LEVEL
1. PURPOSE
. This method establishes the means for assuring circuit performance to the limits specified in the
applicable acquisition document in regard to HIGH level input load which may be specified as a maximum value (I
IH
max) or
a minimum value (I
IH
min). This method applies to digital microelectronic devices, such as TTL, DTL, RTL, ECL, and MOS.
2. APPARATUS
. The test chamber shall be capable of maintaining the device under test at any specified temperature.
An instrument shall be provided that has the capability of applying the worst case HIGH voltage to the input terminal of the
test circuit, and worst case levels at the other inputs, and measuring the resultant current at the input terminal.
3. PROCEDURE
. The device shall be stabilized at the specified test temperature. Worst case power supply voltages and
worst case input voltages shall be applied to the test circuit and the resultant current at the input terminal shall be measured.
Inputs shall be tested individually.
4. SUMMARY
. The following details shall be specified in the applicable acquisition document:
a. Test temperature.
b. Power supply voltages.
c. Input voltage.
d. Input voltages at other input terminals which cause worst case current at the input under text.
e. I
IH
max.