MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第501页

MIL-STD-883F METHOD 3011.1 15 November 1974 1 METHOD 3011.1 OUTPUT SHORT CIRCUI T CURRENT 1. PURPOSE . This method est ablis hes the means for as suri ng cir cuit perfor mance to t he limi ts s pecif ied in the applic ab…

MIL-STD-883F

METHOD 3010.1

15 November 1974

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MIL-STD-883F

METHOD 3011.1

15 November 1974

METHOD 3011.1

OUTPUT SHORT CIRCUIT CURRENT

1. PURPOSE

. This method establishes the means for assuring circuit performance to the limits specified in the

applicable acquisition document in regard to output short circuit current (I

). This method applied to digital microelectronic

devices, such as TTL, DTL, RTL, and MOS.

2. APPARATUS

. A test chamber capable of maintaining the device under test at any specified temperature. An

instrument will be provided that has the capability of forcing a voltage specified in the applicable acquisition document at the

output terminal of the device under test and measuring the resultant current flowing in that terminal. The test instrument

shall also have the capability of applying specified voltage levels to all other inputs.

3. PROCEDURE

. The device shall be stabilized at the specified test temperature. Each output per package shall be

tested individually.

3.1 TTL, DTL, RTL, MOS (P-Channel and N-Channel)

. Inputs of the device under test shall be conditioned in such a way

as to provide a HIGH level at the output for TTL, DTL, RTL, and MOS (N-Channel) and a LOW level at the output for MOS

(P-Channel). The output terminal shall be forced to 0 volt potential and the resultant current flow measured.

3.2 C-MOS I

OSH

. Inputs of the device under test shall be conditioned in such a way as to provide a HIGH level at the

output. The output terminal shall be forced to 0 volt potential and the resultant current flow measured.

3.3 C-MOS I

OSL

. Inputs of the device under test shall be conditioned in such a way as to provide a LOW level at the

output. The output terminal shall be forced to a voltage potential specified in the acquisition document and the resultant

current flow measured.

4. SUMMARY

. The following details shall be specified in the applicable acquisition document:

a. Test temperature.

b. Input conditioning voltages.

c. Power supply voltages.

d. I

max and I

min limits.

MIL-STD-883F

METHOD 3011.1

15 November 1974

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