MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第538页
MIL-STD-883F METHOD 3020 29 May 1987 2 This page i ntenti onally lef t blank
MIL-STD-883F
METHOD 3020
29 May 1987
1
METHOD 3020
HIGH IMPEDANCE (OFF-STATE) LOW-LEVEL OUTPUT LEAKAGE CURRENT
1. PURPOSE
. This method establishes the means for assuring circuit performance to the limits specified in the
applicable acquisition document in regard to output leakage current when an output is in the high-impedance state with a
low-level voltage applied. This current should normally be specified as a maximum negative value (I
OLZ
maximum). This
method applies to digital microelectronic devices, such as TTL, DTL, RTL, ECL, and MOS that have tristate outputs.
2. APPARATUS
. The test chamber shall be capable of maintaining the device under test at any specified test
temperature. An instrument shall be provided that has the capability of applying the specified low level voltage to the output
terminal and measure the resultant current flowing in the terminals.
3. PROCEDURE
. The device shall be stabilized at the specified test temperature. Apply voltages to the test circuit as
follows:
a. Worst-case power supply voltage (V
CC
) applied to the V
CC
terminal.
b. Threshold-level voltages (V
IH
minimum or V
IL
maximum) applied to the control inputs which forces the output under
test into the high-impedance (off) state.
c. Nonthreshold level voltage applied to the logic input terminals controlling the output under test so as to produce a
"hard" high voltage level at that output if the output was not in the high-impedance state. Apply the specified low
logic level voltage to the output terminal under test and measure the resultant leakage current. Outputs shall be
measured individually.
4. SUMMARY
. The following details shall be specified in the applicable acquisition document:
a. Test temperature.
b. Worst case power supply voltages.
c. Threshold voltage levels for control inputs.
d. Voltages at logic input terminals for output under test.
e. Output voltage.
f. I
OLZ
maximum negative limit.
MIL-STD-883F
METHOD 3020
29 May 1987
2
This page intentionally left blank
MIL-STD-883F
METHOD 3021
29 May 1987
1
METHOD 3021
HIGH IMPEDANCE (OFF-STATE) HIGH-LEVEL OUTPUT LEAKAGE CURRENT
1. PURPOSE
. This method establishes the means for assuring circuit performance to the limits specified in the
applicable acquisition document in regard to output leakage current when an output is in the high-impedance state with a
high-level voltage applied. This current should normally be specified as a maximum positive value (I
OHZ
maximum). This
method applies to digital microelectronic devices, such as TTL, DTL, RTL, ECL and MOS that have tristate outputs.
2. APPARATUS
. The test chamber shall be capable of maintaining the device under test at any specified test
temperature. An instrument shall be provided that has the capability of applying the specified high level voltage to the output
terminal and measure the resultant current flowing out of the terminals.
3. PROCEDURE
. The device shall be stabilized at the specified test temperature. Apply voltages to the test circuit as
follows:
a. Worst-case power supply voltage (V
CC
) applied to the V
CC
terminal.
b. Threshold level voltage (V
IH
minimum or V
IL
maximum) applied to the control inputs which will cause the output
under test to be in the high-impedance (off) state.
c. Nonthreshold level voltage applied to the logic input terminals controlling the output under test so as to produce a
"hard" low voltage level at that output if the output was not in the high-impedance state. Apply the specified high
logic level voltage to the output terminal under test and measure the resultant leakage current. Outputs shall be
measured individually.
4. SUMMARY
. The following details shall be specified in the applicable acquisition document:
a. Test temperature.
b. Worst case power supply voltages.
c. Threshold voltage levels for control inputs.
d. Voltages at logic input terminals for output under test.
e. Output voltage.
f. I
OLZ
maximum positive limit.