MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第584页
MIL-STD-883F METHOD 5003 20 November 1969 2 3.1.2 El ectr ical verif icat ion proc edures . This s hall i nclude t he measurement of all el ectr ical parameter s in t he applic able acquis iti on document. 3.1.3 Addi tio…
MIL-STD-883F
METHOD 5003
20 November 1969
1
METHOD 5003
FAILURE ANALYSIS PROCEDURES FOR MICROCIRCUITS
1. PURPOSE
. Failure analysis is a post mortem examination of failed devices employing, as required, electrical
measurements and many of the advanced analytical techniques of physics, metallurgy, and chemistry in order to verify the
reported failure and identify the mode or mechanism of failure as applicable. The failure analysis procedure (as indicated by
test condition letter) shall be sufficient to yield adequate conclusions, for determination of cause or relevancy of failure or for
initiation of corrective action in production processing, device design, test or application to eliminate the cause or prevent
recurrence of the failure mode or mechanism reported.
1.1 Data requirements
. When required by the applicable acquisition document the failure analyst shall receive, with the
failed part, the following information:
a. Test conditions: This shall include the type of test or application, the in-service time (when available), temperature,
and other stress conditions under which the device failed.
b. System conditions: This shall include the exact location of failure in the equipment, date, test and inspection or
both, at which defect was first noted, any unusual environmental conditions and all related system anomalies noted
at time of removal of the failed unit. The equipment symptoms shall also be recorded.
c. General device information: This shall include part type numbers and serial numbers (when applicable), date
code, and other identifying information, and size of production or inspection lot (when applicable).
2. APPARATUS
. The apparatus required for failure analysis includes electrical test equipment capable of complete
electrical characterization of the device types being analyzed, micromanipulators capable of point-to-point probing on the
surface of device dies or substrates, as required, and microscopes capable of making the observations at the magnifications
indicated in the detailed procedures for the specified test condition. In addition, special analytical equipment for bright field,
dark field and phase contrast microscopy, metallographic sectioning, and angle lapping are required for the test condition C.
Special analytical equipment for test condition D are as detailed in the procedure and shall be available only as required for
each specific device analysis at that level. Apparatus for x-ray radiography, hermeticity test, and other specific test methods
shall be as detailed in the referenced method. Cleaning agents, chemicals for etching, staining, oxide, or metallization
removal shall be available as required.
3. PROCEDURE
. Failure analysis shall be performed in accordance with the specified test condition letter (see 4).
3.1. Test condition A. Failure verification
. This represents a minimal diagnosis, comprised of the electrical verification of
the failure including external and internal photographic recording of the suspected mode or mechanism of failure. The
following steps (see 3.1.1 through 3.1.5) shall be performed in the sequence indicated and the results included in the failure
analysis report. The sequence may be modified or additional tests performed when justified by an analysis of the results of
previous steps in the sequence.
3.1.1 External examination
. This shall include an optical examination at a magnification of 30X minimum of:
a. The condition of the leads, plating, soldered, or welded regions.
b. Condition of external package material, seals, marking, and other failures as warranted.
Photographic records shall be made at suitable magnification of any unusual features.
MIL-STD-883F
METHOD 5003
20 November 1969
2
3.1.2 Electrical verification procedures. This shall include the measurement of all electrical parameters in the applicable
acquisition document.
3.1.3 Additional electrical tests
. These shall be performed specifically for the determination of opens and shorts:
a. Threshold test. Determine the forward characteristic obtained for each pin to substrate and compare to the device
schematic and structure. Excessive forward voltage drop may indicate an open or an abnormally high resistance
current path.
b. Case isolation. (For metal packages or those with metal lids or headers only.) Apply a voltage between the
package and the external leads. Current flow determines the presence of shorts-to-case.
c. As an alternative to a. and b. above, suitable electrical tests may be made to determine that no opens, shorts, or
abnormal characteristics exist between pairs of pins, pins and die or substrate, or pins and device package.
3.1.4 Internal examination
. The lid of the failed device shall be carefully removed and an optical examination made of the
internal device construction at a minimum magnification of 30X. A color photograph, at suitable magnification to show
sufficient detail, shall be taken of any anomalous regions which may be related to the device failure.
3.1.5 Information obtainable
. The following is a partial list of failure modes and mechanisms which may be identified
using test condition A:
a. Overstress conditions resulting from device abuse, transients, or inadequate power supply regulation, evidenced
as open or shorted leads, and other metallization problems, such as flashover between contacts with the circuit.
b. Excessive leakage currents indicating degraded junctions.
c. Resistance changes.
d. Degradation of time response or frequency dependent parameters.
e. Opens and shorted leads or metallization land areas.
f. Undercut metals.
g. Intermetallic formation.
h. Poor bond placement and lead dress.
i. Thin metal at oxide steps.
j. Migration of metal.
k. Oxide contamination - discoloration.
l. Oxide defects, cracks, pinholes.
m. Mask misregistration.
n. Reactions at metal/semiconductor contact areas.
o. Degradation of lead at lead frame.
MIL-STD-883F
METHOD 5003
20 November 1969
3
p. Shorts through the oxide or dielectric.
q. Missing or peeling metals.
r. Corroded metals within package.
s. Cracked die or substrate.
3.2 Test condition B
. This is a more extensive procedure which supplements test condition A with x-ray radiography, seal
testing, additional electrical measurements, package cleaning, vacuum baking, and probing procedures to aid in
confirmation of suspected modes and mechanisms. The following steps shall be performed in the sequence indicated and
the results included in the failure analysis report. The sequence may be modified or additional tests performed when
justified by an analysis of the results of previous steps in the sequence.
3.2.1 External examination
. This shall include an optional examination at a magnification of 30X minimum of:
a. The conditions of leads, platings, soldered, or welded regions.
b. Condition of external package material, seals, markings, and other features as warranted.
Photographic records shall be taken at suitable magnification of any unusual features.
3.2.2 Electrical verification procedures
. This shall include the measurement of all electrical parameters in the applicable
acquisition document.
3.2.3 Additional electrical tests
. In addition to the threshold and case isolation tests, this section provides for curve tracer
pin to pin measurements and other nonstandard measurements which allow electrical characterization of significant physical
properties.
a. Threshold test. Determine the forward characteristic obtained for each pin to substrate and compare to the device
schematic and structure. Excessive forward voltage drop may indicate an open or abnormally high resistance in
the current path.
b. Case isolation. (For metal packages or those with metal lids or headers only.) Applying a voltage between the
package and the external leads. Current flow determines the presence of shorts-to-case.
c. Pin-to-pin two and three terminal electrical measurements utilizing a transistor curve tracer, electrometer,
picoammeter, capacitance bridge, and oscilloscope, as required, shall be performed and results recorded for lead
combinations involving the defective portion of the microcircuit. Gain, transfer, input versus output, forward and
reverse junction characteristics, shall be observed and interpreted. Resulting characteristics may be compared to
those obtained from a good unit, and differences interpreted for their relation to the device failure.
3.2.4 X-ray radiography
. A film record is required of the failed device taken normal to the top surface of the device, and
where applicable, additional views shall be recorded. This shall be performed when open or shorted leads, or the presence
of foreign material inside the device package are indicated from electrical verification of failure or there is evidence of
excessive temperature connected with the device failures.
3.2.5 Fine and gross seal testing
. This shall be performed in accordance with method 1014 of this standard.