MIL- STD-883F 2004 TEST METHOD STANDARD MICROCIRCUITS - 第587页

MIL-STD-883F METHOD 5003 20 November 1969 5 3.3.1 Tot al devic e cros s sec tion. This pr ocedur e shall be used where t here are i ndicat ions of defect s in t he package, die or subs trat e, bonds, seals , or s truc tu…

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MIL-STD-883F
METHOD 5003
20 November 1969
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3.2.6 External package cleaning. When there is evidence of contamination on the package exterior, the device shall be
immersed in standard degreasing agents followed by boiling deionized water. After drying in clean nitrogen, critical
parameters in the applicable acquisition document shall be remeasured in accordance with 3.2.1 above.
3.2.7 Internal examination
. The lid of the failed device shall be carefully removed and an optical examination made of the
internal device construction, at a minimum magnification of 30X. A color photograph, at suitable magnification to show
sufficient detail, shall be taken of any anomalous regions which may be related to the device failure. Where there is
evidence of foreign material inside the device package, it shall be removed using a stream of dry compressed inert gas or
appropriate solvents. The relationship of the foreign material to device failure (if any) shall be noted and if possible, the
nature of the material shall be determined.
3.2.8 Electrical verification procedures
. Critical parameters of the individual specification shall be remeasured and
recorded.
3.2.9 Vacuum bake
. This shall be performed at the suggested condition 10
-5
torr, 150°C to 250°C for 2 hours noting any
change in leakage current, as a result of baking, using a microammeter.
3.2.10 Electrical verification procedures
. Critical parameters of the individual specification shall be remeasured and
recorded.
3.2.11 Multipoint probe
. A multipoint probe shall be used as applicable to probe active regions of the device to further
localize the cause of failure. A curve tracer shall be used to measure resistors, the presence of localized shorts and opens,
breakdown voltages, and transistor gain parameters. A microammeter shall be used for measuring leakage currents, and
where applicable, a capacitance bridge shall be employed for the determination of other junction properties. It may be
necessary to open metallization stripes to isolate components.
3.2.12 Information obtainable
. The procedures of test condition B can result in the following information in addition to that
outlined in 3.1.5:
a. Hermeticity problems.
b. Radiographically determined defects such as poor wire dress, loose bonds, open bonds, voids in die or substrate
mount, presence of foreign materials.
c. Further definition of failed device region.
d. Stability of surface parameters.
e. Quality of junctions, diffusions and elements.
3.3 Test condition C
. In this procedure additional metallographic analysis techniques are provided to supplement the
analysis accomplished in test condition B, and shall be performed after completion of the full procedure of test condition B.
In test condition C, one of the procedures (see 3.3.1, 3.3.2, and 3.3.3) shall be selected as appropriate and the steps shall
be followed in the sequences indicated. The sequence may be modified or additional tests performed when justified by the
analysis of the results of previous steps in the sequence.
MIL-STD-883F
METHOD 5003
20 November 1969
5
3.3.1 Total device cross section. This procedure shall be used where there are indications of defects in the package, die
or substrate, bonds, seals, or structural elements. The following steps shall be performed:
a. Mount the device in the appropriate orientation for cross sectioning procedures.
b. Section to reveal desired feature(s) and stain where applicable.
c. Employ bright field, dark field, or polarized light photomicrography at suitable magnification.
d. Make photographic record of defective regions or features pertinent to the mode or mechanism of failure.
3.3.2 Oxide defect analysis
. This procedure shall be used where there are indication of oxide (or other dielectric)
structural anomalies or contamination within or under the oxide or where it is necessary to determine the specific location
and structure of such defects. The following steps shall be performed:
a. Remove bonds to die or substrate and remove metallized interconnection layer(s).
b. Observe the oxide using interferometric or phase contrast photomicrography at suitable magnification and make
appropriate photographic record.
c. Observe and probe semiconductor contact (window or cut) areas as applicable, recording appropriate electrical
characteristics.
d. Mount the die or substrate in the appropriate orientation for sectioning (angle or cross) procedures, cut or lap to
reveal desired features and stain where applicable.
e. Make photographic record at suitable magnification.
3.3.3 Diffusion defect analysis
. This procedure shall be used where there are indications of diffusion imperfections,
diffusion of contact metal into the semiconductor, structural defects in the semiconductor or anomalies in junction
geometries. The following steps shall be performed:
a. Remove bonds to die or substrate and remove metallized interconnection layer(s).
b. Remove oxide or other dielectric passivation layer.
c. Probe contact regions recording appropriate electrical characteristics.
d. Stain surface to delineate junctions.
e. Mount the die or substrate in the appropriate orientation for cross sectioning or angle lapping, as applicable.
f. Cut or lap as required to expose significant features and stain junctions (may involve successive lap and stain
operations to approach specific defect).
g. Make photographic record at suitable magnification of significant features and record pertinent electrical probing
results.
3.3.4 Information obtainable
. Failure analysis in accordance with test condition C provides additional capability for
detecting or defining the following types of defects:
a. Oxide or dielectric imperfections.
b. Oxide or dielectric thicknesses.
MIL-STD-883F
METHOD 5003
20 November 1969
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c. Diffusion imperfections.
d. Junction geometries.
e. Intermetallic phase formation.
f. Voids at the bond/metallization interface.
g. Diffusion of contact metal into the semiconductor or substrate.
h. Migration of metals across, through, or under the oxide or dielectric.
i. Voids in die or substrate mount.
3.4 Optional measurements
. The purpose of failure analysis is to obtain sufficient information to initiate corrective action
in device design, production, test, or application. It may be necessary to obtain more detailed information than can be
acquired in test conditions A, B, or C on the nature of contaminants or phases observed, concentrations, dimensions of
submicroscopic features, etc. The selection and use of a number or less conventional analytical techniques by highly
qualified personnel can provide this more extensive or fundamental knowledge of the precise chemical, physical, or
electrical mechanisms of failure. The decision as to which techniques are appropriate and the point in the analytical
sequence of test conditions A, B, or C at which they should be employed is contingent on the nature of information desired
and previous results obtained from the specified analytical procedures, and must be left to the discretion of the analyst. Any
of the following techniques may therefore be introduced into a failure analysis sequence at the appropriate point provided
precautions are taken to avoid destruction of the evidence of failure which may be observed in subsequent procedures.
Where multiple samples of the same type of device or failure exist, it shall be permissible to subdivide the quantity of
devices and employ destructive techniques in parallel with the specified test condition provided all samples have been
exposed to electrical verification tests and internal examination (see 3.1.1 through 3.1.3 and 3.2.1 through 3.2.5) prior to any
of the optional measurements. When any of these optional measurements are employed, they shall be listed in the failure
analysis report including the details of the method applied, conditions of test and results.
a. Residual gas analysis. When device surface contamination is indicated as a possible cause of failure, the lid of an
unopened device shall be punctured and the internal gaseous ambient analyzed for the type and concentration of
volatile products. This information then supplements electrical leakage current measurements and hermeticity
tests.
b. Surface profilometer measurement. A mechanical determination of surface topography variations can be made
using this type of instrument. This records the vertical motion of a stylus moved across the surface of the device.
This information can be used to quantitatively determine oxide, dielectric, or metal thicknesses.
c. Photoscanning. A device, with leads and interconnections intact, after being opened, can be scanned with a small
diameter beam of light which generates photovoltages in active p-n junctions. This generated photovoltage which
is dependent on many physical junction properties indicates the presence of surface channels or inversion layers
or both, caused by contamination on, in, or under the passivating oxide layer. It is also possible to locate certain
regions of enhanced high field multiplication, mask misregistration, imperfect diffusions, as well as other device
imperfections involving junction properties.
d. Infrared scanning. An IR detector, sampling infrared radiation from various points of the surface of an operating
microcircuit, can detect the location of hot spots and other thermal abnormalities.